U426B TEMIC | Alldatasheet

Document overview

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Technical content

Features

Programmable constant current 200 mA to 1.2 A Signal frequency up to 500 kHz Low-power standby mode Internal voltage comparator Wide voltage range 2.4 V to 12 V

Applications

Wireless data communication

Ordering Information

MON–O MON–I RS VBatt Controller U426B 95 9947 IRED Figure 1. Block diagram for an IR transmitter

current can be programmed via the external resistor (RS). Figure 4. Timing diagram

Rev. A2, 15-Oct-98 4 (6) Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage Pin 1 VS 13.4 V Supply current t < 10 s IS is 150 mA mA Input voltages Pins 2, 3 and 5 Pin 6 VI VS V V Input currents Pins 2, 3 and 5 II mA Output voltage Pin 7 Pin 4 13.4 VS V V Output current t < 100 s Pin 7 Pin 4 1.5 A mA Power dissipation Tamb = 85°C SO8 : on PC board on ceramic on ceramic with silicon grease Ptot Ptot Ptot 150 250 430 mW mW mW Junction temperature Tj 125 Ambient temperature range Tamb –40 to 85 Storage temperature range Tstg –40 to 150 Thermal Resistance Parameters Symbol Value Unit Junction ambient SO8: on PC board on ceramic on ceramic with silicon grease RthJA RthJA RthJA 220 140 K/W K/W K/W

Electrical Characteristics

VS = 6 V, Tamb = 25°C, reference point Pin 8, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Supply current Pin 1 Supply voltage Pin 1 VS 2.4 V Standby current II A Wake-up current Without pulse II 1.5 mA Overvoltage protection I1 = 20 mA VS V DATA Pin 2 Input signal High Low 1.6 3.6 2.1 4.2 2.6 V V Common-mode input VS V Rise time tr 500 ns Fall time tf 500 ns Signal frequency f 500 kHz Input current 100 A MON-I Pin 3 Reverse current V3 = 0 V Ir 0.8 A Input voltage HIGH Input voltage LOW MON-I on MON-O off 485 515 525 545 555 580 mV mV Hysteresis Temperature coefficient TC 100 A/K Input current V3 = 6 V 0.3 A

Rev. A2, 15-Oct-98 5 (6) Electrical Characteristics (continued) VS = 6 V, Tamb = 25°C, reference point Pin 8, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit MON-O Pin 4 Output current V4 ≥ 200 mV mA Output current V4 ≥ 400 mV mA Reverse current V4 ≤ 6 V Ir 0.2 A Output voltage HIGH VS V Saturation voltage I4 = 1 mA Vsat 200 mV WAKE Pin 5 Input current V5 = 6 V V5 = 0 V ±0.2 A A Input voltage HIGH Input voltage LOW Busy Standby VS 0.2 V V SHUNT Pin 6 Output current IRED VS = 2.4 V; RS = 0.62 VS = 6.0 V; RS = 0.62 VS = 12 V; RS = 0.62 VS = 6 V; RS = 0.11 VS = 12 V; RS = 0.11 205 220 235 1.25 1.3 245 265 275 1.5 1.55 mA mA mA A A Shunt voltage V2 = VS = 6 V; RS = 0.11 VShunt 140 150 160 mV Temperature coefficient Tamb = –40 to 85°C TC V/K IRED Pin 7 Output voltage V2 = VS = 6 V; I7 = 1 A Vout 1000 mV Output voltage V2 =0 V; I7 = 0 Vout 13.2 V Reverse current V2 =0 V; V7 = 6 V Ir A Rise/fall time tr 300 ns Delay time Pin 2 to Pin 7 td s Standby/busy tSB ms Busy/standby tBS ms

Package Information

5.00 4.85 0.4 1.27 3.81 1.4 0.25 0.10 5.2 4.8 3.7 3.8 6.15 5.85 0.2

Rev. A2, 15-Oct-98 6 (6) Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423