U4062B TEMIC | Alldatasheet
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Technical content
Features
/C0068Completely integrated FM front end increases quality level and reliability /C0068High performance due to three AGC loops allow extreme large signal handling /C0068Fulfils FTZ rules /C0068Double-balanced high linear mixer with low-noise figure /C0068Oscillator with low phase noise and excellent frequency stability /C0068IF preamplifier with dB-linear gain control /C0068Low noise and high stability of the reference voltage circuit for internal and auxiliary functions Block Diagram 16 14 4 2 13 12 15 65117 Figure 1. Block diagram
Ordering Information
Extended Type Number Package Remarks U4062B-B DIP18
Figure 2. Pinning DIP18
1 Oscout Oscillator output
2 V S Supply voltage
3 IFout IF output
4 GND Ground
5 MIX in Mixer input
6 V Ref Reference voltage output
7 C Collector
8 B RF Base, RF preamplifier
9 E Emitter
10 AGC out AGC output
11 GND Ground
12 MIX out Mixer output
13 MIX out Mixer output
14 AGC in AGC input (IF strip)
15 IFin IF input / IF gain control
16 AGC AGC time constant
17 B Osc Base oscillator
18 EOsc Emitter oscillator
Rev. A1, 07-Dec-98 3 (21)
Electrical Characteristics
V S = 10 V , fiRF = 50.3 MHz, fOsc /C0091 100 MHz, fIF = fOsc – fiRF /C0091 49.7 MHz, reference point Pins 4 and 11, Tamb = +25°C, unless otherwise specified, see test circuit figure 4. Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Supply voltage range V S 7 16 V Supply currents Supply current Pin 2 IS 11.5 mA Mixer Pins 12 and 13I12 + I13 9 mA RF stage R 4 = 470 /C0087 Pin 7 I7 9 mA RF preamplifier (Rg9 = 50 /C0087, RL7 = 200 /C0087) DC voltage Pin 7 V 7 5.7 V Pin 8 V 8 0.77 V Power gain G RF 10.5 dB Third order intercept IP3 12 dBm Dynamic characteristics, f = 100 MHz Input impedance Z9 5 /C0087 Forward current gain | i7/i9 | hfb 1 A/A Parallel output resistance R 7 3 k/C0087 Parallel output capacitance C 1 3.8 pF Noise figure NF RF 2 dB Oscillator (fOsc = 100 MHz, unloaded Q = 80, resonance resistance Rg17 = 250 /C0087) DC voltage Pin 17 V 17 3.2 V Pin 18 V 18 2.5 V Oscillator voltage Pin 17 V Osc17 100 130 mV Frequency drift By supply voltage change dfo/dVS /C0068fOsc(VS) 1.3 kHz/V By temperature change dfo/dK /C0068fOsc(Tj) 2 kHz/K FM noise equivalent deviation, Frequency band 300 Hz to 20 kHz, unweighted /C0068fnoise 5 Hz (Ripple voltage < 0.5 mV) Peak CCIR /C0068fnoise 10.5 Hz Peak CCIR, weighted with 75 /C0109s, deemphasis /C0068fnoise 4.2 Hz FM by AM signal at mixer input fiRF = 90 MHz, m = 0.8, fM = 1 kHz, V iRF = 106 dB/C0109V /C0068fOsc (ViRF) 160 Hz Oscillator output buffer (RL1 = 520 /C0087) DC current load limitation Pin 1 I1 0.2 mA DC voltage Pin 1 V 1 1.7 V V oltage gain V Osc17 /C0120 200 mV V Osc1/VOsc17 Pin 1 G buffer 0.86 Harmonics <–30 dBC Output impedance Pin 1 Z1 80 /C0087
Rev. A1, 07-Dec-984 (21) Electrical Characteristics (continued) V S = 10 V , fiRF = 50.3 MHz, fOsc /C0091 100 MHz, fIF = fOsc – fiRF /C0091 49.7 MHz, reference point Pins 4 and 11, Tamb = 25°C, unless otherwise specified, see test circuit figure 4. Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Mixer (Rg5 = 200 /C0087, RL12–13 = 200 /C0087) Conversion power gain G C 7.5 dB Third order intercept IP3 3.5 dBm Parallel input resistance f = 100 MHz Pin 5 R 5 5 k/C0087 Parallel input capacitance f = 100 MHz Pin 5 C 5 3 pF Parallel output resistance f = 10.7 MHz, Pins 12, 13 parallel connected R 12 + 13 55 k/C0087 Effective output capacitance between Pin 12 and 13 f = 10.7 MHz V 12, 13 = 10 V V 12, 13 = 7 V V 12, 13 = 16 V C 12–13 C 12–13 C 12–13 2.9 3.25 2.5 3.1 3.5 2.7 3.3 3.75 2.9 pF pF pF Conversion transconductance| i12/u5 |, | i13/u5 | gc 5.8 m–mho Maximum available conversion power gain fiRF = 100 MHz, fIF = 10.7 MHz MACG 43 dB Noise figure (fIF = 10.7 MHz) Single side band R g5(fiRF) = 450 /C0087, fiRF = fOsc – fIF NF CSSB 5.6 dB IF preamplifier (f = 10.7 MHz, RL3 = Rg15 = 200 /C0087) DC voltage Pin 3 V 3 7.6 V Power gain Maximum control voltage of V15 = 1.6 V is recom- mended V 15 = 1.6 V V 15 < 0.8 V G maxIF G minIF dB dB Gain control deviation by V15 /C0068G IF 28 dB External control current at GmaxIF at GminIF Pin 15 I15max I15min /C0109A /C0109A Gain control slope dG IF/dI15 dG IF/dV15 Pin 15 SI15 SV15 1.3 dB//C0109A dB/V Temperature coefficient of voltage gain dG IF/dTj at V 15 1.6 V V 15 < 0.8 V I15 = constant TCG 0 0.04 –0.02 dB/K dB/K dB/K Parallel input resistance Pin 15 R 15 2.4 k/C0087 Parallel input capacitance Pin 15 C 15 5.9 pF Parallel output resistance Pin 3 R 3 350 /C0087 Parallel output capacitance Pin 3 C 3 4.1 pF Noise figure V 15 = 1.6 V NF IF 11 dB
Rev. A1, 07-Dec-98 5 (21) Electrical Characteristics (continued) V S = 10 V , fiRF = 50.3 MHz, fOsc /C0091 100 MHz, fIF = fOsc – fiRF /C0091 49.7 MHz, reference point Pins 4 and 11, Tamb = 25°C, unless otherwise specified, see test circuit figure 4. Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit AGC circuit (no signal at Pins 5 and 9) DC voltage Pin 16 V 16 1.0 V Saturation voltage Pin 10 V 10min 0.08 0.2 V Input current V 14 /C0120 V6 Pin 14 –I14 0.01 0.1 /C0109A Maximum allowable current Pin 14 ± I14max 50 /C0109A Maximum control current for external PIN-diode I10 = 0 Idiode I7 AGC threshold voltages (respecting V10 = 0.25 V) RF stage output Pin 7 V RF7 450 mV Mixer-stage output V 14 = V6 Pin 13 V IF13 300 mV External AGC voltage V IF13 = 1 V Pin 14 V 14min 0.9 V Internal AGC voltage Pin 16 V 16min 1.4 V Reference voltage source Output voltage, without loadI6 = 0 Pin 6 V 6 1.6 1.7 1.8 V Temperature dependence of V6 |V6|Tamb = –25 to +85°C /C0068V 6 (T) 20 mV Internal differential resistancedV 6/dI6 when I6 = 0 mA rd6 50 /C0087 Ripple rejection 20 log (dVs/dV6 ) when I6 = 0 mA /C00976 65 dB Noise voltage /Hz/C0504 when I6 = 0 and f = 25 Hz f = 125 Hz f = 1 kHz f = 10 kHz 0.6 0.37 0.1 0.1 /C0109V /C0109V /C0109V /C0109V
Figure 43. Typical Application circuit for high performance FM front end using non-repetitive alignment concept
Rev. A1, 07-Dec-98 17 (21) Coils Specifications L8/L9 Toko 7 PL9/ (18 + 18) turns Nr. 218 ANS – 788 N L10 Toko 7 Kl 3 turns Nr. 291 ENS – 2054 IB or Toko MC 122 Nr. E528 SNAS – 100075 L 11/L12 Toko 7 Kl without case 4/8 turns Nr. 291 ENF – 2342 x L
13 Toko 7 Kl 4 turns
Nr. 291 ENS – 2341 IB or Toko MC 122 Nr. E528 SNAS – 100076 L 14/L17 Choke 1.5 /C0109H Toko 348 LS – 1R5 or similar CF1; CF2 Toko CFSK – 107M3 or similar V S = 8.5 V , Tamb = 25°C Electrical Connections Pin DIP18 V oltage (DC) in V LO output 1 1.73 V S 2 8.5 IF output 3 6.1 Ground 4 0 Mixer input 5 1.7 Reference output voltage 6 1.7 RF preamplifier (collector) 7 8.5 RF preamplifier (base) 8 1.3 RF preamplifier (emitter) 9 0.53 AGC output 10 0.07 Ground 11 0 Mixer output 12 8.5 Mixer output 13 8.5 AGC input 14 1.7 IF input, IF gain control15 1.54 AGC time constant 16 1.06 LO (base) 17 3.2 LO (emitter) 18 2.51 FM Front End Data Using Application Circuit Antenna impedance 75 /C0087, Zload IF = 330 /C0087, VS = 8.5 V , Tamb = 25°C Characteristics Symbol Min. Typ. Max. Unit Supply current IS 32 mA Tuning range f 88 108 MHz Tuning voltage – at 88 MHz (equal IC’s reference voltage) – at 108 MHz V tune V tune 1.7 6.5 V V Center IF f 10.7* MHz IF output bandwidth at –3 dB B IF 130* kHz Power gain G 46* dB Gain variation versus the band /C0068G 1 dB Noise figure NF 6 dB Image rejection 57 70 dB RF intermodulation 70 dB 1/2 IF rejection 90 dB Spurious response, second osc. harmonic 90 dB IF rejection 85 dB Osc. output voltage at 520 /C0087 load V OSC 200 mV * Depending on ceramic IF filters to be used
Rev. A1, 07-Dec-9820 (21)
Package Information
0.5 min technical drawings according to DIN specifications 7.77 7.4723.3 max 4.8 max 3.3 6.4 max 0.36 max 9.8 8.2 1.64 1.44 0.58 0.48 2.54 20.32 18 10
Rev. A1, 07-Dec-98 21 (21) Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423