U4050B-AFL

U4050B TEMIC | Alldatasheet

Document overview

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Technical content

Features

/C0068Integrated amplifier for loudhearing operation /C0068Anticlipping for loudspeaker amplifier /C0068Supply voltages for all functional blocks of a subscriber set /C0068Adjustable DC characteristics /C0068Adjustable sending and receiving amplification /C0068Automatic line loss compensation /C0068Symmetrical output of earpiece amplifier /C0068Built-in ear protection /C0068Symmetrical input of microphone amplifier /C0068Adjustable sidetone suppression independent of sending and receiving amplification /C0068DTMF and MUTE inputs /C0068Anticlipping in transmit direction /C0068Squelch /C0068Integrated transistor for short circuiting the line voltage /C0068Power down /C0068Operation possible at line currents above 10 mA Benefits /C0068Independent adjustment of transmit gain, receive gain and sidetone suppression /C0068Low number of external components Block Diagram Power supply SASAI TXA RECO2RECO1 5 16 GSA SAO CLISA AGA CK VL RDC VC VDVMSW AMPIREFGNDPDMUTECLIM LIMITER GS MICO TIN ST GR MIC1 DTMF MIC2 LEVSQ CSQ MUTE SQUELCH AGA NSA LIMSA REC. ATT. U4050B Figure 1. Block diagram

Ordering Information

Extended Type Number Package Remarks U4050B-AFL SO28 U4050B-AFLG3 SO28 Taped and reeled

Figure 2. Typical application diagram

Figure 3. Pinning S028

2 GR A resistor connected from this pin to

4 ST Input of sidetone amplifier

5 CLIM Time constant of anticlipping in trans-

6 CK Input of receiving path

7 MICO Output of microphone preamplifier

8 DTMF Input for DTMF signals (ac coupled).

9 GS A resistor from this pin to VM sets the

10 MIC1 Inverting input of microphone ampli-

11 MIC2 Non-inverting input of microphone

12 LEVSQ Input for setting the switching level of

13 CSQ Time constant of the squelch function

14 VM Reference node for microphone, ear-

phone and loudspeaker amplifier.

15 TIN Input of intermediate transmit stage

16 MUTE Active high input to switch the circuit

17 CLISA Time constant of anticlipping of

18 SWAMP A resistor connected from this pin to

19 RDC A small resistor connected from this

20 VD Unregulated supply voltage for pe-

21 SAO Output of loudspeaker amplifier.

22 GND Reference point for DC and AC out-

23 VL Line voltage

24 VC The internal equivalent inductance of

25 PD Active high input for reducing the

current consumption of the circuit.

26 GSA Current input for setting the gain of

27 AGA Automatic gain adjustment with line

Maximum gain change is 6 dB.

28 IREF Internal reference current generation

Rev. A2, 05-Mar-984 (18) Absolute Maximum Ratings Parameters Symbol Value Unit Line current IL 140 mA Line voltage V L 15 V Junction temperature Tj 150 °C Ambient temperature Tamb –25 to +75 °C Storage temperature Tstg –55 to +150 °C Total power dissipation (Tamb = 60°C, SO28) Ptot 750 mW Thermal Resistance Parameters Symbol Value Unit Junction ambient SO28 R thJA 120 K/W

Electrical Characteristics

Test conditions unless otherwise specified: f = 1 kHz, 0 dBm = 775 Vrms, IM = 0.3 mA, ID = 2 mA, RC = 130 kΩ , Tamb = 25°C, RGSA = 560 kΩ , ZH = ZM = 68 nF, Pin AGA open Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit DC characteristics see figure 4 IL = 2 mA V L 1.9 V DC oltage drop IL = 15 mA V L 4.8 5.2 5.6 VDC voltage drop over circuit IL = 19 mA V L 5.4 Vover circuit IL = 30 mA V L 6.0 V IL = 100 mA V L 9.5 V Transmission amplifier see figures 5 and 11 Adjustment range of transmit gain IL = 15 mA G S 40 48 56 dB Transmitting amplification IL = 15 mA G S 47.75 48.25 48.75 dB Frequency response IL /C0119 15 A, CL = 4.7 nF f = 300 to 3400 Hz /C0068G S /C00340.5 dB Gain change with current Pin AGA open IL = 15 to 100 mA /C0068G S /C00340.5 dB Gain deviation Tamb = –10 to +60°C IL = 15 mA /C0068G S /C00340.5 dB CMRR of microphone amplifier CMRR 60 80 dB Input resistance of MIC amplifier R i 45 60 80 kΩ Distortion at line IL > 15 mA V L = 775 mV2rms ds 2 % Maximum output voltage IL > 19 mA d < 5% V mic = 10 m V 1max 1.8 3 4.2 dBm Noise at line psophometrically weighted IL > 15 mA G S = 48 dB no –80 –72 dBmp Anticlipping attack time V mic = 20 mV C = 470 nF 0.5 ms Release time Each 3 dB overdrive 9 ms

Rev. A2, 05-Mar-98 5 (18) UnitMax.Typ.Min.SymbolTest Conditions / PinsParameters Gain at low operating current IL = 10 mA, ID = 1 mA RC = 68 kΩ V mic = 1 mV IM = 0 mA G S 47 50 dB Distortion at low operating current IL = 10 mA, IM = 0 mA ID = 1 mA, RC = 68 kΩ V mic = 10 mV ds 6 % Line loss compensation IL = 100 mA R AGA = 7.5 kΩ /C0068G SI –5 –6 –7 dB Mute suppression IL /C011915 mA V mute = 1.5 V G SM 60 dB Receiving amplifier see figures 6 and 8 Adjustment range of receiving gain IL /C0119 15 mA differential G R –8 +8 dB Receiving amplification IL = 15 mA differential G R –1 –0.5 0 dB Amplification of DTMF signal from DTMF IN to RECO 1/2 IF /C0119 15 mA Mute active G RM –15 –12 –9 dB Frequency response IL > 15 mA, CL = 4.7 nF f = 300 to 3400 Hz /C0068G RF /C00340.5 dB Gain change with current IL = 15 to 100 mA /C0068G R /C00340.5 dB Gain deviation Tamb = –10 to + 60°C IL = 15 mA /C0068G R /C00340.5 dB Ear protection differential IL /C0119 15 mA V gen = 11 Vrms V ep 2.2 V rms Output resistance Each output against GND R o 10 Ω Line loss compensation IL = 100 mA R AGA = 7.5 kΩ /C0068G RI –5.0 –6.0 –7.0 dB Output voltage Push pull Single ended IL = 15 mA, d /C0118 2% ZH = 68 nF ZH = 450 Ω ZH = 150 Ω 0.775 0.6 0.3 V rms Receiving noise psophometrically weighted ZH = 68 nF G R = 0 dB IL > 15 mA ni –83 –78.5 dBmp Gain at low operating current IL = 10 mA ID = 1 mA IM = 0 mA V gen = 560 mV RC = 68 kΩ G R –1.5 + 0.5 dB Distortion at low operating current IL = 10 mA, ID = 1 mA V gen = 560 mV RC = 68 kΩ dr 5 %

Rev. A2, 05-Mar-986 (18) UnitMax.Typ.Min.SymbolTest Conditions / PinsParameters Speaker amplifier see figure 7 Minimum line current for operation No ac signal ILmin 10.5 15 mA Gain from VL to SAO IL /C0119 15 mA V gen = 10 mV G SA 27.5 29 30.5 dB Output power Load resistance R L = 50 Ω d < 5 % V gen = 300 mVrms IL > 15 mA IL = 20 mA PSA PSA mW Output noise IL > 15 mA (Input GSA open) nsa 200 µV Gain devitation IL = 15 mA Tamb = –10 to + 60°C /C0068G SA /C00341 dB Gain change with current IL = 15 to 100 mA R AGA = 7.5 kΩ /C0068G SA /C00341.5 dB Resistor for turning off speaker amplifier IL = 15 to 100 mA R GSA 0.8 1.3 2 M /C0087 Maximum off-state Output voltage IL = 15 mA V L = 0 dBm Pin GSA open V SAO –50 dBm Gain change with frequency IL = 15 mA f = 300 to 3400 Hz /C0068G SA /C00341 dB Attack time 20 dB overdrive tr 1 ms Release time tf 300 ms Distortion IL = 15 mA V gen = 300 mV dSAO 5 % DTMF - amplifier see figure 8 Test conditions: ID = 2 mA, IM = 0.3 mA, RAGA = 7.5 kΩ , mute active Adjustment range of DTMF gain IL = 15 mA Load = 600 Ω G D 18 26 34 dB DTMF amplification IL = 15 mA G D 24.5 26 27 dB Gain deviation IL = 15 mA Tamb = –10 to 60°C G D /C00340.5 dB Input resistance R i 20 25 30 kΩ Distortion of DTMF signal IL /C0119 15 mA V I = 0 dBm d 2 % Gain deviation with current IL = 15 to 100 mA R AGA = 7.5 kΩ /C0068G D /C00340.5 dB

Rev. A2, 05-Mar-98 7 (18) UnitMax.Typ.Min.SymbolTest Conditions / PinsParameters Supply voltage see figure 4 Test conditions: VMIC = 10 mV; Tamb = –10 to 60°C Output voltage IL = 15 mA ID = 2 mA RC = 68 kΩ IL = 15 mA ID = 2 mA RC = 130 kΩ IL = 100 mA ID = 0 mA Tamb = –10 to + 60°C V D V D V D 2.9 3.1 6.1 V V V Supply voltage for an electret microphone IM = 0.3 mA IL /C0119 15 mA RC = 130 kΩ V M 1.45 3.3 V Squelch see figure 9 Attenuation of transmit gain IL /C0119 15 mA /C0068G S 8 10 12 dB Attenuation of speaker amplifier IL /C0119 15 mA R GSA = 18 to 560 kΩ /C0068G SA 7.5 10 12.5 dB Switching level of squelch IL /C0119 15 mA RSQ = 100 kΩ V mico 6.5 10 mV Squelch disable IL /C0119 15 mA RSQ 0.5 1 2 M Ω MUTE input see figure 10 MUTE input current MUTE active IL > 15 mA V MUTE = VD IMUTE 20 30 µA MUTE input voltage Mute inactive IL > 15 mA V MUTE 0,3 V Mute active I L > 15 mA V MUTE 1.5 0,3 V PD input see figure 10 PD input current PD active I L > 15 mA V PD = VD IPD 20 50 µA Input voltage PD = active V PD 2 V PD = inactive V PD 0.3 V Current consumption V D = VPD = 4.5 V PD = active I L= 15 mA IDPD –40 –100 µA V oltage drop at VL IL = 15 mA PD = active V L 1.5 V IL=100 mA PD = active V L 1.7 V

300 A470n

Figure 4. Test circuit for supply voltage DC characteristics

300 A 2 mA

Figure 5. Test circuit for transmit amplifier

Figure 6. Test circuit for receiving amplifier

Figure 7. Test circuit for speaker amplifier

Figure 8. Test circuit for DTMF amplifier

Figure 9. Test circuit for squelch

300 A CM

Figure 10. Test circuit for MUTE and PD test

Figure 11. Test circuit for transmit amplifier (CMRR)

Rev. A2, 05-Mar-98 17 (18)

Package Information

0.25 0.10 Dimensions in mm 0.4 1.27 16.51 18.05 17.80 2.35 7.5 7.3 9.15 8.65 10.50 10.20 0.25 28 15 11 4

Rev. A2, 05-Mar-9818 (18) Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423