U3500BM

U3500BM TEMIC | Alldatasheet

Document overview

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Technical content

Features

Symmetrical input of microphone amplifier Symmetrical output of earpiece amplifier Compander Pre- and deemphasis Scrambler Data management Power-supply management Serial bus Block Diagram LOG MIXO IFIN2 IFIN1 DACO Scrambler frequency Expander REC Oscillator

11.15 MHz

C D Serial Bus LPF TGAIN ADJ.2 Limiter Preem TGAIN ADJ.1 Compressor IFAMP Demodulator RGAIN ADJ LPF LPF Deem MIC Scrambler frequency RXO ETC EXIN RECO2 RECO1 RXDAT TXDAT MIC1 MIC2 MICO COIN VCC TXO GND CTC 14678 LPF Divider Figure 1. Block diagram

Figure 2. Pinning

Rev. A3, 20-May-98 3 (17) Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage VBatt, VCC 5.5 V Junction temperature Tj +125 Ambient temperature Tamb –25 to +75 Storage temperature Tstg –50 to +125 Power dissipation Tamb = 60°C Ptot W Thermal Resistance Parameters Symbol Value Unit Junction ambient SO28 RthJA 120 K/W

Electrical Characteristics

Test conditions (unless otherwise specified): VBatt = VCC = 3.6 V, Tamb = +25°C Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Current consumption ERX2 ELNA ERXHF ERX1 ERXO EEA EDEE ETX EPREE Operating voltage range 3.1 3.6 5.2 V Inactive mode VBatt = 2.9 V A Standby mode 100 120 A RX waiting for RSSI ELNA = ERXHF = 1 1.7 2.5 3.4 mA RX waiting for data ELNA = ERXHF = ERX1 = 1 1.45 1.9 2.45 mA Operating current, RX and TX completely active ERX2 = ELNA = ERXHF = ERX1 = ERXO = EEA= EDEE = GDEM = ETX = 1 4.5 6.5 9.5 mA Low noise amplifier (LNA) f = 41.4 MHz, input level = –50 dBm Supply current 0.8 1.2 mA Input impedance 160 200 240 Output impedance 120 Gain f = 50 MHz dB Noise figure Bandwidth = 1 MHz dB 1-dB input compression point –27 –24 dBm Third-order input intercept point f = 41.4 MHz f = 41.4125 MHz Input level = –60 dBm –15 –12 dBm Frequency range FRF MHz

Rev. A3, 20-May-98 Preliminary Information 4 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Receiver IF mixer, f = 10.7 MHz Input resistance 2000 3000 4000 Input capacitance 2.5 3.5 pF Output impedance 1200 1500 1800 Gain GVMIX Input level 7 mVrms GMIX dB Input compression point –17 dBm Third-order input intercept point dBm Carrier breakthrough from internal LO (11.15 MHz) to IF output 300 Vrms Carrier breakthrough from internal LO (11.15 MHz) to RF input Vrms IF amplifier: RSSI Input resistance 1.6 2.5 k RSSI-sensitivity VIF = 0 Vrms starting from 0 increase RSSI- level until mean of sampled signal at DACO is 0.2 RSSI-level = CON0 VIF = 25.4 Vrms, f = 450 kHz increase RSSI level again until mean of sampled signal at DACO is 0.2. RSSI-level = CON1 RSSI-sensitivity = CON1–CON0 RSSI-input voltage dynamic range dB RSSI-level number of programmable steps *) 127 RSSI-level step size in the logarithmic region 0.35 0.46 0.6 dB *) RSSI Level Programming (Typical Values) Input Voltage VIF (Vrms) RSSI Level (Decimal) 25.4 42.4 424 4240 42400 111

Rev. A3, 20-May-98 5 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. RF demodulator fIF = 450 kHz, fMOD = 1 kHz, VIF = 500 Vrms BSCR EDEE GRX0 GRX1 GRX2 GRX3 ERX1 ERXO ERX2 Recovered audio GDEM = 0, fFM = 2.5 kHz GDEM = 1, fFM = 5.0 kHz 0.4 0.4 0.8 0.8 1.6 1.6 Vpp Vpp Recovered audio output voltage drop VBatt = 3.1 to 5.2 V dB AM rejection ratio 30% AM dB RX audio Change of RX0 signal deemphasis bypass EDEE = 0 –0.5 0.5 dB Gain adjust range dB Gain adjust step 0.8 1.2 dB Output signal vs. frequency relative to 1 kHz (0 dB) deemphasis bypassed 100 Hz 300 Hz 1800 Hz 3200 Hz 4100 Hz –7.5 –2.0 –1.3 –0.8 –6.5 –1.0 –0.3 0.2 –5.5 0.7 1.2 –60 dB Output signal vs. frequency relative to 1 kHz (0 dB) deemphasis enable EDEE = 1 100 Hz 300 Hz 1800 Hz 3200 Hz 4100 Hz –0.7 3.7 –5.7 –10 0.3 4.7 –4.7 –9.0 1.3 5.7 –3.7 –8.0 –66 dB Total harmonic distortion FM = 250 Hz FM = 2.50 kHz 3.5 3.5 Audio mute FM = 2.5 kHz, ERXO = 0 ERX1 = 0, ERX2 = 0 dB Output impedance 100 Expander EEA GEA0 GEA1 GEA2 GEA3 GEA4 Gain reference level VEXIN = –10 dBVrms GOREC dB Change of gain when expander is bypassed BCOMP = 1 –0.5 0.5 dB Gain tracking VEXIN = –20 dBVrms VEXIN = –30 dBVrms VEXIN = –35 dBVrms VEXIN = –40 dBVrms –21 –41 –53 –50 –60 –19 –39 –47 dB Input impedance 9.5 14.5 k Gain change vs. supply voltage VBatt = 3.1 to 5.2 V –0.5 0.5 dB Attack time VEXIN = step –20 dBVrms –14 dBVrms, measure time after step, when output voltage has 0.75 times the final value tf ms Release time VEXIN = step 14 dBVrms –20 dBVrms, measure time after step, when output voltage has 1.5 times of the final value tf ms

Rev. A3, 20-May-98 Preliminary Information 6 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Earpiece amplifier BCOMP = 1, EEA = 1, VEXIN = 100 mVrms Medium gain GEA0 GEA1 GEA2 GEA3 GEA4 = 1 dB Minimum gain GEA0 GEA1 GEA2 GEA3 GEA4 = 0 –12 –11 –10 dB Gain change versus VS VBatt = 3.1 to 5.2 V –0.2 0.2 dB Gain adjust range dB Gain adjust step 0.8 1.2 dB Output impedance Distortion dt Output offset voltage VEXIN = 0 mVrms –200 200 mV Output voltage swing Increase VEXIN until distor- tion (RECO1/ RECO2) is 5% 4.8 5.0 Vpp Maximum gain GEA0 GEA1 GEA2 GEA3 1 1 GEA4 = 1 dB Low Frequency Transmitter GMIC EPREE BSCR GlTX G2TX BCOMP ETX 1000 1000 Microphone Amplifier VMIC = 10 mVrms, fIN = 1 kHz Gain High gain: GMIC = 1 Low gain: GMIC = 0 dB dB Gain change versus VS VBatt = 3.1 to 5.2 V –0.2 0.2 dB Differential input impedance 103 k Output impedance Distortion VMIC = 10 mVrms dt Output noise (psophmetrically weighted) VMIC = 0 Vrms high gain (inputs closed across 200 ) Vrmsp TX Audio VCOIN = –20 dBVrms Gain GTX (COIN, TXO) 2.5 5.5 8.5 dB Change of gain TXO EPREE = 0 –0.5 0.5 dB Gain between 3.2 and 5.2 V dB TX gain adjust range adj. 1 dB TX gain adjust step adj. 1 0.8 1.2 dB LIM gain adjust range adj. 2 dB LIM gain adjust range adj. 2 0.8 1.2 dB TX gain vs. frequency (preemphasis bypassed) relative to 1 kHz reference level 0 dB 100 Hz 300 Hz 1800 Hz 3200 Hz 4100 Hz –1.3 –1.3 –0.8 –1.9 –25.9 –0.3 –0.3 0.2 0.9 –23.9 0.7 0.7 1.2 0.1 –21.9 dB Gain vs. frequency with preemphasis relative to 1 kHz reference level 0 dB 100 Hz 300 Hz 1800 Hz 3200 Hz 4100 Hz –0.8 –6.8 3.3 6.0 16.6 –7.0 –5.8 4.3 7.0 –14.6 –6.0 –4.8 5.3 8.0 –12.6 dB Total band ripple VBatt = 3.1 to 5.2 V VCOIN = –20 dBV dB

Rev. A3, 20-May-98 7 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Limiter Output voltage Increase VCOIN until d = 5% at TX0 then measure VTX0 1.05 2.0 Vpp Mute ETX = 0, VCOIN = –l0 dBV attenuation at TX0 output dB Output impedance TXO k Compressor BSCR EPREE G2TX0 G2TX1 G2TX2 G2TX3 EIX GlTX0 G1TX1 G1TX2 G1TX3 Input impedance BCOMP = 1 k Gain reference level G0TX VCOIN = –10 dBVrms G0TX 5.5 dB Gain change when compressor is bypassed VCOIN = –10 dBVrms BCOMP = 1 0.5 0.5 dB Gain tracking VCOIN = –30 dBVrms VCOIN = –50 dBVrms VCOIN = –60 dBVrms VCOIN = –70 dBVrms –11 –21 –22 –30 –19 –28 dB Attack time VCOIN= step –30 dBVrms –18 dBVrms measure time after step when output voltage has 1.5 times the final value tf 3.5 ms Release time VCOIN= step –18 dBVrms –30 dBVrms measure time after step when output voltage has 0.75 times the final value tf 14.4 ms Scrambler EPREE BSCR BCOMP Conversion gain versus frequency FIN (1 kHz) reference level 0 dB FIN=1kHz, FOUT=3.1kHz FIN=0.1kHz, FOUT=4.0kHz FIN=0.3kHz, FOUT=3.8kHz FIN=0.7kHz, FOUT=3.4kHz FIN=1.8kHz, FOUT=2.3kHz FIN=2.6kHz, FOUT=1.5kHz FIN=3.2kHz, FOUT=0.9kHz FIN=3.4kHz, FOUT=0.7kHz –1.0 –4.4 –2.1 –0.8 –1.1 –1.1 –2.5 –3.4 –1.1 0.2 –0.1 –0.1 –0.5 1.0 –2.4 –0.1 1.2 0.9 0.9 –0.5 dB Carrier break through mVrms Descrambler EDEE BSCR BCOMP Conversion gain vs. frequency FIN=4kHz, FOUT=0.1kHz FIN=3.8kHz, FOUT=0.3kHz FIN=3.4kHz, FOUT=0.7kHz FIN=2.3kHz, FOUT=1.8kHz FIN=l.5kHz, FOUT=2.6kHz FIN=0.9kHz, FOUT=3.2kHz FIN=0.7kHz, FOUT=3.4kHz –3.6 –1.3 –0.4 –1.5 –0.4 –1.7 –1.9 –2.6 –0.3 0.6 0.5 0.6 –0.3 –0.9 –1.6 0.7 1.6 0.5 1.6 0.7 0.1 dB Carrier break through Measure FOUT = 4.099 kHz 0.1 0.5 mVrms

Rev. A3, 20-May-98 Preliminary Information 8 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Data management Receive data management GDEM ERX1 ERXHF Duty cycle RXDAT VIF = 100 Vrms fIF = 450 kHz fMIF = 1 kHz fIF = 5 kHz 0.4 0.5 0.6 Transmit data management ETX1 Input impedance TXDAT 200 k Final value of step re- sponse ETDM = 1, BSCR = 1 VTXDAT = step 1.5 V → 1.75 V Measure step at TXO 311 mV Logical Part Inputs: C, D Low voltage input High voltage input Input leakage current (0 < VI < VCC) 0.8VCC 0.2VCC A Input LOIN Input leakage current (0 < VI < VCC) A Outputs: DACO, RXDAT Output low Output high lol = 10 A loh = –10 A 0.9VCC 0.1VCC Serial bus Data set-up time Data hold time Clock low time Clock high time Hold time before transfer condition Data low pulse on transfer condition Data high pulse on transfer condition tsud thd tcl tch teon teh teof 0.1 0.1 0.2 0.2 s s s s s s s

Rev. A3, 20-May-98 9 (17) Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit Fig. Battery Management Max bat low DA0 to 6 = 1, RBAT = 1 3.7 3.95 4.1 V Min bat low over switch DA0 to 6 = 27 BIN, RBAT = 1 3.05 3.2 3.35 V Max bat high DA0 to 6 = 1, RBAT = 0 4.75 5.05 5.25 V Min bat high DA0 to 6 = 0, RBAT = 0 3.83 4.1 4.27 V Adjust step 3.5 7.5 11.5 mV Max – Min 852.5 952.5 1052.5 mV MINBL – SWOFF 100 200 300 mV Battery Switch Off threshold DA0 to 6 = 1, RBAT = 1 2.9 3.0 3.1 V On threshold DA0 to 6 = 27 BIN, RBAT = 1 3.1 3.2 3.35 V Hysteresis 220 250 280 mV Switch ron DA0 to 6 = 0, RBAT = 0 Max bat low MAXL (battery voltage when all DAC bits are high, low range) Min bat low MINBL (battery voltage when DAC bits are 001 1011, low range) Max bat high MAXBH (battery voltage when all DAC bits are high, high range) Min bat high MINBH (battery voltage when all DAC bits are low, high range) Adjust step Adjust step Max – Min MAXBH – MINBH MINBL – SWOFF MINBL – SWOFF Off threshold SWOFF (off threshold of the battery switch) On threshold SWON (on threshold of the battery switch) Hysteresis SWON– SWOFF Switch ron Switch Ron (resistance of the switch transistor, when switch is “ON”) LNA LNAIN 1 nF 100 pF 200 Ω 3 kΩ RF generator VFRF LNAO VBATT 11779 Figure 3. MIXIN 10 nF 100 nF 50 Ω 1.5 kΩ RF generator VFRF MIXO 11780 Figure 4.

Rev. A3, 20-May-98 13 (17) Content of Internal Registers The registers have the following structure: RO: Reference for D/A converter MUXDA DA6 DA5 DA4 DA3 DA2 DA1 DA0 MUXDA: D/A multiplexing DA(6:0): Reference voltage D/A R1: Gain adjustment RECLF GEA3 GEA2 GEA1 GEA0 GRX3 GRX2 GRX1 GRX0 GEA(3:0): Gain earpiece amplifier (see also R5) GRX(3:0): Gain adjustment RX R2: Gain adjustment TRANLF G2TX3 G2TX2 G2TX1 G2TXO G1TX3 G1TX2 G1TX1 G1TX0 G2TX(3:0): Gain adjustment TX after limiter G1TX(3:0): Gain adjustment TX R3: Enable functions receive GDEM EDDE EEA ERXO ERX1 ERXHF ELNA ERX2 GDEM: Gain demodulator EDDE: Enable deemphasis (disables bypass) EEA: Enable earpiece amplifier ERXO: Enable RXO output ERXHF: Enable mixer and IF amplifier ELNA: Enable low-noise amplifier ERX(l:0): Enable parts of RXLF R4: Enable functions transmit SSCCK RBAT BCOMP BSCR GMIC ETDM EPREE ETX SSCCK: Shift SC-clock (chifts SC-clock by 17/16) RBAT: Battery detection high/low range BCOMP: Bypass compressor and expander BSCR: Bypass scrambler and descrambler GMIC: Gain of microphone preamplifier ETDM: Enable transmit data management EPREE: Enable preemphasis (disables bypass) ETX: Enable TX low frequency part R5: free free free free free free GEA4 EXTLO GEA4: Gain earpiece amplifier MSB (see also R1) EXTLO: Select input mixer R6 – R15: reserved for U3550BM

Rev. A3, 20-May-98 Preliminary Information 14 (17) Example of Mode Setting Using Enable Bits (U3500B + U3550B) Active Mode (Transmission) Active Mode (PLL Convergence Waiting) Receive Mode (Only Data) Receive Mode (RX Waiting) Standby Mode (ex. Battery Low) Inactive Mode (Switch Off) *PA (VTX PIN), EEA X *EVCO1 ETX, ERX2, ERXO X X ERX1 X X X ERXHF, ELNA *EVCO3 RSSI / Battery Management (MUXDA) X X X X LOGIC PART (Enables when VBatt > 3.2 V) X X X X X Switch Comparator (Always Enabled) X X X X X X * refer to U3550BM

Rev. A3, 20-May-98 15 (17) Application Circuit U3550BM 330 nF 100 nF 1 F 5.6 k 680 pF 330 nF 330 nF 10 nF 68 nF 24 k 33 pF BZT55C51 56 k 1.5 k 10 nF 330 nF U3500BM 330 nF 390 k 560 k MCKO VCC DGND 4.7 pF 4.7 k 1 nF 1 H 1 nF 100 nF GND TX ANT GND RX Duplex filter 100 nF CFU450G IN TXDAT RXDAT DACO 330 nF 330 nF 100 pF C D 100 nF 330 nF 470 nF 470 nF 330 nF 100 nH 10G75A

10.7 MHz

Figure 16.

Rev. A3, 20-May-98 Preliminary Information 16 (17)

Package Information

0.25 0.10 Dimensions in mm 0.4 1.27 16.51 18.05 17.80 2.35 7.5 7.3 9.15 8.65 10.50 10.20 0.25

Rev. A3, 20-May-98 17 (17) Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423