U311 NJSEMI | Alldatasheet
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£s t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Silicon Junction Field-Effect Transistor
- Mixer
- Oscillator
- VHF/UHF Amplifier Absolute maximum ratings at TA = 25 °C. Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2,4 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Gate Forward Transconductance Common Gate Output Conductance Gate Drain Capacitance Gate Source Capacitance V(BR)GSS I 'GSS -,, J'GS(OFF) VGS(F) bss 9fg_ 9og Cdg Cgs U311 Min Typ Max -25 f ~~p ' | -150 4 -150 f [ 1 20 | 60
1000 T 17QOO
! " T 5 Unit V PA nA V mA uS uS PF PF Test Conditions IG = - 1 MA, VDS = 0V VGS = -15V,VDS = 0V VGS = -15V,VDS = 0V VDS = 10V, ID = I nA VDS = 0V- IG = T mA Vns = 10V, Vrs = 0V Uo ' uo VDS = 10V, ID = 10mA VDS = iov, iD = 10mA VDS = 10V' 'D = 10mA VDS = 10V, ID = 10mA TA = 150°C f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors