U308 CALOGIC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

U308 – U310

FEATURES

  • • High Power Gain
  • • Low Noise
  • • Dynamic Range Greater The 100dB
  • • Easily Matched to 75Ω Input ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part Package Temperature Range U308-10 Hermetic TO-52 -55 oC to +150oC XU308-10 Sorted Chips in Carriers -55oC to +150oC CORPORATION PIN CONFIGURATION D S (TO-52) G, C 5021 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER U308 U309 U310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current -150 -150 -150 pA VGS = -15V -150 -150 -150 nA VGS = 0 T A = 125oC BV GSS Gate-Source Breakdown Voltage -25 -25 -25 V IG = -1µA, VDS = 0 IDSS Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA V DS = 10V, VGS = 0 VGS(f) Gate-Source Forward Voltage 1.0 1.0 1.0 V IG = 10mA, VDS = 0 gfg Common-Gate Forward Transconductance (Note 1) 10 17 10 17 10 17 mS VDS = 10V, ID = 10mA f = 1kHz gogs Common Gate Output Conductance 250 250 250 µS C gd Drain-Gate Capacitance 2.5 2.5 2.5 pF VGS = -10V, VDS = 10V f = 1MHz (Note 2)C gs Gate-Source Capacitance 5.0 5.0 5.0 en Equivalent Short Circuit Input Noise Voltage 10 10 10 nV √ Hz VDS = 10V, ID = 10mA f = 100Hz (Note 2)

U308 – U310 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL PARAMETER U308 U309 U310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX gfg Common-Gate Forward Transconductance 15 15 15 µS VDS = 10V, ID = 10mA (Note 2) f = 100MHz 14 14 14 f = 450MHz gogs Common-Gate Output Conductance 0.18 0.18 0.18 f = 100MHz 0.32 0.32 0.32 f = 450MHz G pg Common-Gate Power Gain 14 16 14 16 14 16 dB f = 100MHz 10 11 10 11 10 11 f = 450MHz NF Noise Figure NOTES: 1. Pulse test duration = 2ms. 2.For design reference only, not 100% tested.