U2797B

U2797B TEMIC | Alldatasheet

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Technical content

Features

/C0068Supply voltage: 5 V (typical) /C0068Low power consumption: 30 mA / 5 V (typical at –1 dBm output level) /C0068150 k/C0087 I/Q input impedance /C0068Excellent sideband suppression by means of duty cycle regeneration of the LO input signal /C0068Phase control loop for precise 90° phase shifting /C0068Power down mode /C0068Low LO input level: –10 dBm (typical) /C006850-/C0087 single-ended LO and RF port /C0068LO- frequency range of 100 MHz to 1 GHz /C0068SSO 20 package Benefits /C0068Extended talk time due to increased battery life /C0068Few external components result in cost and board space saving /C0068Adjustment-free hence saves time Block Diagram FrequencyDuty cycle regenerator doubler 90 control loop M Power down 18 5,6 V S V Ref 2, 3, 15, 16, 17, 18 GND 94 8185 e BB Ai BB Ai LO i BB BB Bi Bi SP D RF o PD Phase adj. Ordeing Information Extended Type Number Package Remarks U2797B-AFS SSO20 Rail, MOQ 830 pcs. U2797B-AFSG3 SSO20 Tape & reel, MOQ 4000 pcs.

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.19952 (13) Pin Description SSO 20 GND 20PD GND GND GNDGND Phadj RF O V S V S BB Ai BB Ai BB Bi BB Bi LO i Phadj V S SPD V REF GND 94 8186 e U2790B–FS (SSO 20) Pin Symbol Function

1 PD Power down port

2 GND Ground

3 GND Ground

4 RF o RF output

5 V S Supply voltage

6 V S Supply voltage

7 V S Supply voltage

8 SPD Settling time power down

9 BB Ai Baseband input A

10 BB Ai Baseband input A inverse

11 BB Bi Baseband input B

12 BB Bi Baseband input B inverse

13 V REF Reference voltage (2.5 V)

14 LO i LO input

15 GND Ground

16 GND Ground

17 GND Ground

18 GND Ground

19/20 Phadj Phase adjustment (not necessary for regular applications) Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage Pins 5, 6 and 7 V S 6 V Input voltage Pins 9, 10, 11, 12, 14 and 15 V i 0 to VS V Junction temperature Tj 125 °C Storage temperature range Tstg –40 to +125 °C Operating Range Parameters Symbol Value Unit Supply voltage range Pins 5, 6 and 7 V S 4.5 to 5.5 V Ambient temperature range Tamb –40 to +85 °C Thermal Resistance Parameters Symbol Value Unit Junction ambient SSO 20 R thja 140 K/W

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 3 (13)

Electrical characteristics

Test conditions (unless otherwise specified): VS = 5 V , Tamb = 25°C, referred to test circuit. System impedance ZO = 50 /C0087, fLO = 900 MHz, PLO = –10 dBm, VBBi = 1 Vpp diff Parameters Test conditions / Pin Symbol Min. Typ. Max. Unit Supply voltage range Pins 5, 6 and 7 V S 4.5 5.5 V Supply current Pins 5, 6 and 7 IS 30 mA Baseband inputs Pins 9-10, 11–12 Input voltage range (differential) V BBi 1000 1500 mV pp Input impedance (single ended) ZBBi 150 k/C0087 Input frequency range fBBi 0 200 MHz LO input Pin 14 Frequency range fLOi 100 1000 MHz Input level 1 PLOi –12 –10 –5 dBm Input impedance ZiLO 50 /C0087 V oltage standing wave ratio VSWR LO 1.4 2 – Duty cycle range DCR LO 0.4 0.6 – RF output Pin 4 Output level PRFo –5 –1 dBm LO suppression 2 fLO = 900 MHz fLO = 150 MHz LO RFo 30 dB Sideband suppression 2,3 fLO = 900 MHz fLO = 150 MHz SBS RFo 35 dB Phase error 4 Pe < 1 deg. Amplitude error A e </C00340.25 dB Noise floor V BBi = 2 V , VBBi = 3 V V BBi = VBBi = 2.5 V N FL – 132 – 144 dBm/Hz VSWR VSWR RF 1.6 2 3rd order baseband harmonic suppression SBBH 35 45 dB RF harmonic suppression SRFH 35 dB Power down mode Supply current V PD /C0120 0.5 V Pins 4, 5 V PD = 1 V IPD 1 /C0109A Settling time C SPD = 100 pF C LO = 100 pF C RFo = 1 nF Pin 6 to 3 tsPD 10 /C0109s Switching voltage Pin 1 Power on V PDon 4 V Power down V PDdown 1 V Reference voltage Pin 13 V oltage range V Ref 2.35 2.5 2.65 V Output impedance Zo Ref 30 /C0087 Note: 1 The required LO level is a function of the LO frequency Note: 2 In reference to a RF output level /C0118 –1 dBm and I/Q input level of 400 mVpp diff. Note: 3 Sideband suppression is tested without connection at pins 19 and 20. For higher requirements a potentiometer can be connected at these pins. Note: 4 For Tamb = –40 to + 85°C and VS = 4.5 to 5.5 V

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.19954 (13) Typical single sideband output spectrum fLO = 900 MHz, PLO = – 10 dBm, VBBi = 1 VPP (differential), Tamb = 25°C 94 7856 e Typical GMSK output spectrum 94 7855 e

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 5 (13) Typical RF-harmonic output spectrum 94 7854 e –40 –20 0 20 80 IP3 ( dBm ) Temperature ( °C ) 100 94 8884 V BBi = 0.4 VPP V BBi = 0.2 VPP 40 60 OIP3 vs. Tamb , LO = 150 MHz, level – 20 dBm 94 8885 –40 –20 0 20 80 IP3 ( dBm ) Temperature ( °C ) 100 V BBi = 1.0 VPP V BBi = 0.4 VPP 40 60 OIP3 vs. Tamb , LO = 900 MHz, level – 10 dBm

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.19956 (13) 94 8887 –40 –20 0 20 80 –2.5 –1.5 0.5 Output power ( dBm ) Temperature ( °C ) 100 FLO = 900 MHz 40 60 –0,5 FLO = 150 MHz Output power vs. Tamb 94 8886 –40 –20 0 20 80 Supply current ( mA ) Temperature ( °C ) 10040 60 Supply current vs. Tamb Typical S11 frequency response of the RF output 94 7850 e

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 7 (13) Typical VSWR frequency response of the RF output 94 7849 e Typical S11 frequency response of the LO input 94 7852 e

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.19958 (13) 100 VSWR LO frequency (MHz) 1000 94 7851 Typical VSWR frequency Response of the LO Input –20 0 20 40 80 Supply current ( mA ) Temperature ( °C ) 100 94 7845 60–40 Typical supply current vs. temperature at VS = 5 V 0 200 400 600 800 LO frequency ( MHz ) 1400 94 7859 Output power ( dBm ) 1000 1200 Typical output power vs. LO-frequency at Tamb = 25°C, V BBi = 230 mVPP (differential) V ( differential ) ( V )PP 94 7858 BBi 0 200 400 600 800 LO frequency ( MHz ) 14001000 1200 Typical Required VBBi Input Signal (differential) vs. LO Frequency for PO = 0 dBm and PO = – 2 dBm –50 –40 –30 –20 –10 LO power ( dBm ) 94 7857 0 200 400 600 800 LO frequency ( MHz ) 14001000 1200 Typical useful LO power range vs. LO frequency at Tamb = 25°C

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 9 (13) Application circuit Bias network for ac coupled baseband inputs (VBA , VBB ). R1 = 2.5 k/C0087, R2 /C0120 10 k/C0087 for /C0118 35 dB LO suppression which is in reference to < 2 mV input offset. Duty cycle regenerator Frequency doubler 90 control loop M Power down 5,613 VS 2, 3, 15, 16, 17, 18 GND 94 8184 e BB Ai BB Ai LO i BB BB Bi Bi R 1 VRef PD S RF o 90° PD Phase adj. PCB layout U2797B-FS (SSO 20) 94 8230 e

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.199510 (13) Evaluation circuit (PCB equip) 94 8229 e Part list C1, C3, C6 1 nF C8 100 pF C5 100 nF P Poti 10 k/C0087 L1, L2 PCB Inductor 50 /C0087 Microstrip optional The above listed components result in a PD settling time of < 20 /C0109s. Use of other component values will require consideration of time requirements in burst-mode applications.

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 11 (13) Application notes 1. Noise floor and settling time In order to reduce noise on the power down control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor C PD should be connected from pin 8 to ground in the shortest possible way. The settling time has to be considered for the system un- der design. For GSM applications a value of CPD = 1 /C0109F defines a settling time, tsPD , equal or less than 3 /C0109s. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile application the mask requirements can be achieved very easily with- out CPD . A significant improvement of the wide-off noise floor is obtainable with CPD greater than 100 nF. Such values are recommended for applications where the settling time is not critical, such as in base stations. Coupling capacitors for LO i and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF. Mixer input stage A, B A, B 94 8187 e Figure 1 baseband input circuitry U2797B-FS (SSO 20) has a 150 k/C0087 baseband input impedance. The reference voltage, VREF , is provided at pin 13.

TELEFUNKEN SemiconductorsU2797B Rev. A1: 06.09.199512 (13) Dimensions in mm Package: SSO 20 95 9943

TELEFUNKEN Semiconductors U2797B Rev. A1: 06.09.1995 13 (13) Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423