U2795B-MFP

U2795B ATMEL | Alldatasheet

Document overview

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Technical content

Features

• Supply-voltage Range: 2.7 V to 5.5 V
• Single-ended Output, no Balun Required
• Single-ended Input for RF and LO
• Excellent Isolation Characteristics
• Power-down Mode
• IP3 and Compression Point Programmable
• 2.5-GHz Operating Frequency Benefits
• Reduced System Costs as only Few External Component (no Balun) are Required
• Small Package
• Very Low Current Consumption
• Easy to Use Electrostatic sensitive device. Observe precautions for handling.

Description

The U2795B is a 2.5-GHz mixer for WLAN and RF telecommunications equipment, e.g., DECT and PCN. The IC is manufactured using Atmel's advanced bipolar technol- ogy. A double-balanced approach was chosen to assure good isolation characteristics and a minimum of spurious products. The input and output are single-ended, and their characteristics are programmable. No output transformer or balun is required. Figure 1. Block Diagram

2 U2795B

Figure 2. Pinning

3 P Progamming port IP3, CP

6 GND Ground

8 PU Power-up

4654A–CELL–01/03 Functional Description Supply Voltage The IC is designed for a supply-voltage range of 2.7 V to 5.5 V. As the IC is internally stabilized, the performance of the circuit is nearly independent of the supply voltage. Input Impedance The input impedance, ZRFi, is about 700 /g87 with an additional capacitive component. This condition provides the best noise figure in combination with a matching network. 3rd Order Intercept Point (IP3) The voltage divider, R P/R1, determinates both the input and output intercept point, IIP3 and OIP3. If the value of RP is infinite, the maximum value of IIP3 reachs about -4 dBm. The IP3/R P characteristics are shown in Figure 3 and Figure 4. Output Impedance and Intercept Point The output impedance is shown in Figure 11. Both low output impedance and a high intercept point are defined to a high value of RP. Current Consumption, IS Depending on the chosen input and output conditi ons of the IC, the current consump- tion,IS, is between 4 mA and 10 mA. The current consumption in dependence of Rp is shown in Figure 6. Power-up This feature provides extended battery lifetime. If this function is not used, Pin 8 has to be connected to V S (Pin 1). Output Symmetry The symmetry of the load current can be matched and thus optimized for a given load impedance. Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage V S 6V Input voltage V I 0 to VS V Junction temperature T j 125 /g176C Storage-temperature range T stg -40 to +125 /g176C Thermal Resistance Parameters Symbol Value Unit Junction ambient SO8 R thJA 175 K/W Operating Range Parameters Symbol Value Unit Supply-voltage range V S 2.7 to 5.5 V Ambient-temperature range T amb -40 to +85 /g176C

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4654A–CELL–01/03

Electrical Characteristics

VS = 3 V, fLOi = 1 GHz, IF = 900 MHz, RF = 100 MHz, RP = /g165, system impedance Zo = 50 /g87, Tamb = 25/g176C, RT = 56 /g87 reference point Pin 6, unless otherwise specified No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.1 Supply voltage range 1 V S 2.7 5.5 V A 1.2 Supply Current VS = 2.7 V 1 IS IS 6.2 mA mA A A

1.3 Conversion Supply

RL = 50 /g87, RT = /g165 RL = 50 /g87, RT = 56 /g87 1 PGC PGC dB dB B

2 Operating Frequencies

2.1 RF i frequency 2 RF i 10 2500 MHz D

2.2 LO i frequency 7 f LOi 50 2500 MHz D

2.3 IF o frequency 5 f IFo 50 2500 MHz D

3.1 LO spurious at R Fi PiLO = -10 to 0 dBm 7, 2 IS LO–RF -30 dBm D

3.2 RF i to LOi PiRF = -25 dBm 2, 7 IS RF–LO 35 dB D

3.3 LO spurious at IF o PiLO = -10 to 0 dBm 5, 7 IS LO–IF -25 dBm D

3.4 IF o to LOi 5, 7 IS IF–LO 30 dB D

4 Output (IF)

4.1 Output compression

5 Input (RF)

5.1 Input impedance 2 Z RFi 700/g124/g1240.8 /g87/g124/g124pF D

5.2 Input compression point 2 CP i -14 dBm D

5.3 3rd-order input intercept point 2 IIP3 -4 dBm D

6 Input (LO)

6.1 LO level 7 P iLO -6 dBm D

7 Voltage Standing Wave Ratio (VSWR)

7.1 Input LO 7 VSWR LOi < 2 D

7.2 Output IF 4 VSWR IFo < 2 D

8 Noise Performance

8.1 Noise figure P iLO = 0 dBm, RT = /g165 NF 10 dB D

9 Power-down Mode

9.1 Supply current V PU < 0.5V VPU = 0 V 1I SPU < 5 30 µA µA B B

10 Power-down Voltage

10.1 “Power ON” V S = 3.5 to 5.5 V VS = 2.7 to 3.5 V 8 VPON VS -0.5 VS VS + 0.5 VS + 0.5 V V D D 10.2 “Power DOWN” 8 V PDN 1VD

10.3 Power-down current Power ON

0.15 < 5 0.22 mA µA A D

10.4 Settling time 5,8 t sPD < 30 µs D

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

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Figure 5. Gain versus Resistor Rp, LO: 1030 MHz, level -10 dBm; RF: 130 MHz, Figure 6. Supply Current IS versus Resistor Rp

Figure 7. Gain versus IF Output Frequency, LO Level: -6 dBm, RF: 130 MHz, -35 dBm; Figure 8. IIP3 versus IF Output Frequency, LO Level: -6 dBm; RF: 130 MHz/

130.1 MHz, -35 dBm; Parameter: RF Input Termination

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Figure 9. Double Sideband Noise Figure versus IF Output Frequency; LO: 1000 MHz, Figure 10. Typical VSWR Frequency Response of the IF Output, RP = /g165/g32

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Figure 13. Typical S11 Frequency Response of the RF Intput, RP = /g165, RT = /g165 Figure 14. Typical S11 Frequency Response of the LO Intput, R P = /g165, LO Frequency

Table 1. Part List requirements in burst-mode applications have to be considered. RSO, 68 /g87 is recommended. cation will also increase the supply current.

12 U2795B

4654A–CELL–01/03 Application Circuit (Evaluation Board)

4654A–CELL–01/03

Package Information

Ordering Information

Extended Type Number Package Remarks U2795B-MFP SO8 Tube U2795B-MFPG3 SO8 Taped and reeled technical drawings according to DIN specifications Dimensions in mm 5.00 4.85 0.4 1.27 3.81 1.4 0.25 0.10 5.2 4.8 3.7 3.8 6.15 5.85 0.2

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