U2794B_05 ATMEL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Features
- Supply Voltage 5V Very Low Power Consumption 125 mW Very Good Image Rejection By Means of Phase Control Loop for Precise 90° Phase Shifting Duty-cycle Regeneration for Single-ended LO Input Signal Low LO Input Level –10 dBm LO Frequency from 70 MHz to 1 GHz Power-down Mode 25 dB Gain Control Very Low I/Q Output DC Offset Voltage Typically < 5 mV Benefits Low Current Consumption Easy to Implement Perfect Performance for Large Variety of Wireless Applications Electrostatic sensitive device. Observe precautions for handling. 1. Description The silicon monolithic integr ated circuit U2794B is a quadrature dem odulator manu- factured using Atmel’s advanced UHF technology. This demodulator features a frequency range from 70 MHz to 1000 MHz, low current consumption, selectable gain, power-down mode and adjustment-free handling. The IC is suitable for direct conver- sion and image rejection applications in di gital radio systems up to 1 GHz such as cellular radios, cordless telephones, cable TV and satellite TV systems. 1000-MHz Quadrature Demodulator U2794B Rev. 4653D–CELL–11/05
4653D–CELL–11/05 U2794B Table 2-1. Pin Description Pin Symbol Function 1I X I X o u t p u t
2 I I output
3 II II lowpass filter I
4 IIX IIX lowpass filter I
9 QQ QQ lowpass filter Q
10 QQX QQX lowpass filter Q
11 GC GC gain control
12 PCX PCX phase control
13 PC PC phase control
14 PU PU power up
15 LOX
16 GND Ground
18 GND Ground
19 Q Q output
20 QX QX output
4653D–CELL–11/05 U2794B 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage V S 6V Input voltage V i 0 to VS V Junction temperature T j +125 °C Storage-temperature range T stg –40 to +125 °C 4. Thermal Resistance Parameters Symbol Value Unit Junction ambient SSO20 R thJA 140 K/W 5. Operating Range Parameters Symbol Value Unit Supply-voltage range V S 4.75 to 5.25 V Ambient-temperature range T amb –40 to +85 °C
4653D–CELL–11/05 U2794B 6. Electrical Characteristics Test conditions (unless otherwise specified); VS = 5V, Tamb = 25°C, referred to test circuit System impedance ZO = 50Ω, fiLO = 950 MHz, PiLO = –10 dBm No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.1 Supply-voltage range 5, 6 V S 4.75 5.25 V A
1.2 Supply current 5, 6 I S 22 30 35 mA A
2 Power-down Mode
2.1 “OFF” mode supply current VPU ≤ 0.5V VPU = 1.0 V(1) 14, 5
6 ISPU
≤ 1 µA µA B D 3S w i t c h V o l t a g e 3.1 “Power ON” 14 V PON 4V D 3.2 “Power DOWN” 14 V POFF 1V D
4 LO Input, LO in
4.1 Frequency range 17 f iLO 70 1000 MHz D
4.2 Input level (2) 17 P iLO –12 –10 –5 dBm D
4.3 Input impedance See Figure 6-10 17 Z iLO 50 Ω D
4.4 Voltage standing
wave ratio See Figure 6-3 17 VSWR LO 1.2 2 D 4.5 Duty-cycle range 17 DCR LO 0.4 0.6 D
5 RF Input, RF in
5.1 Noise figure (DSB)
at 950 MHz(3) at 100 MHz 7, 8 NF 12 10 dB D
5.2 Frequency range f iRF = fiLO ±BWYQ 7, 8 f iRF 40 1030 MHz D
5.3 –1 dB input compression point High gain Low gain 7, 8 P1dBHG P1dBLG +3.5 dBm D
5.4 Second order IIP (4) 7, 8 IIP 2HG 35 dBm D
5.5 Third order IIP High gain
Low gain 7, 8 IIP3HG IIP3LG +13 dBm D
5.6 LO leakage Symmetric input
Asymmetric input 7, 8 L OL ≤ –60 ≤ –55 dBm D 5.7 Input impedance see Figure 6-10 7, 8 Z iRF 500II0.8 ΩIIpF D *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. During power-down status a load circuitry with DC- isolation to GND is assumed, otherwise a current of I ≈ (VS –0.8V)/RI has to be added to the above power-down current for each output I, IX, Q, QX. 2. The required LO-Level is a func tion of the LO frequency (see Figure 6-6). 3. Measured with input matching. For 950 MHz, the optional transmission line T3 at the RF input may be used for this pur- pose. Noise figure measurements without using the differential output signal result in a worse noise figure. 4. Using pins 7 and 8 as a symmetric RF in put, the second-order IIP can be improved. 5. Due to test board parasitics, this bandwidth may be reduced and not be equal for I, IX, Q, QX. If symmetry and full band- width is required, the lowpass pins 3, 4 and 9, 10 should be isolated from the board. the bandwidth of the I/Q outputs can be increased further by using a resistor between pins 3, 4, 9 and 10. These resistors shunt the internal loads of RI ~ 5.4 kΩ. The decrease in gain here has to be considered. 6. The internal current of the output emitter followers is 0.6 mA. This reduces the undistorted output voltage swing at a 50Ω load to approximately 30 mV. For low signal distortion the load impedance should be RI ≥ 5 kΩ. 7. Referred to the level of the output vector 8. The low-gain status is achieved with an open or high- ohmic pin 11. A recommended application circuit for switching between high and low gain status is shown in Figure 6-1. I2 Q2+
4653D–CELL–11/05 U2794B 6 I/Q Outputs (I, IX, Q, QX) Emitter Follower I = 0.6 mA 6.1 3-dB bandwidth w/o external C 1, 2, 19,
20 BWI/Q ≥ 30 MHz D
6.2 I/Q amplitude error 1, 2, 19,
6.3 I/Q phase error 1, 2, 19,
20 Pe –3 ≤ ±1.5 +3 Deg B
6.4 I/Q maximum output
Symm. output RL > 5 kΩ 1, 2, 19,
20 VPP 2D
6.5 DC output voltage 1, 2, 19,
20 VOUT 2.5 2.8 3.1 V A
6.6 DC output offset
(6) 1, 2, 19,
20 Voffset < 5 mV Test
spec.
6.7 Output impedance see Figure 6-10 1, 2, 19,
20 Zout 50 Ω D
7 Gain Control, GC
7.1 Control range power Gain high Gain low (7) 11 GCR GH GL dB dBm dBm D B D
7.2 Switch Voltage
7.3 “Gain high” 11 1 V 7.4 “Gain low” (8) 11 < open
7.5 Settling Time, ST
7.6 Power “OFF” - “ON” T SON < 4 µs D
7.7 Power “ON” - “OFF” T SOFF < 4 µs D
- Electrical Characteristics (Continued) Test conditions (unless otherwise specified); VS = 5V, Tamb = 25°C, referred to test circuit System impedance ZO = 50Ω, fiLO = 950 MHz, PiLO = –10 dBm No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. During power-down status a load circuitry with DC- isolation to GND is assumed, otherwise a current of I ≈ (VS –0.8V)/RI has to be added to the above power-down current for each output I, IX, Q, QX. 2. The required LO-Level is a func tion of the LO frequency (see Figure 6-6). 3. Measured with input matching. For 950 MHz, the optional transmission line T3 at the RF input may be used for this pur- pose. Noise figure measurements without using the differential output signal result in a worse noise figure. 4. Using pins 7 and 8 as a symmetric RF in put, the second-order IIP can be improved. 5. Due to test board parasitics, this bandwidth may be reduced and not be equal for I, IX, Q, QX. If symmetry and full band- width is required, the lowpass pins 3, 4 and 9, 10 should be isolated from the board. the bandwidth of the I/Q outputs can be increased further by using a resistor between pins 3, 4, 9 and 10. These resistors shunt the internal loads of RI ~ 5.4 kΩ. The decrease in gain here has to be considered. 6. The internal current of the output emitter followers is 0.6 mA. This reduces the undistorted output voltage swing at a 50Ω load to approximately 30 mV. For low signal distortion the load impedance should be RI ≥ 5 kΩ. 7. Referred to the level of the output vector 8. The low-gain status is achieved with an open or high- ohmic pin 11. A recommended application circuit for switching between high and low gain status is shown in Figure 6-1. I2 Q2+
4653D–CELL–11/05 U2794B
6.1 External Components
6.2 Calibration Part
6.3 Conversion to Single Ended Output
(see datasheet of AD620) CUCC 100 nF CRFX 1 nF CLO 100 pF CNLO 1 nF CRF 100 pF CII, CQQ optional extern al lowpass filters T3 transmission line for RF-input matching, to connect optionally CI, CIX optional for AC-coupling at CQ, CQX baseband outputs CPDN 100 pF not connected CGC 100 pF CPC 100 pF not connected CNPC 100 pF not connected GSW gain switch CO, CS, CL 100 pF RL 50 Ω OP1, OP2 AD620 RG1, RG2 prog. gain, see datasheet, for 5.6 k Ω a gain of 1 at 50 Ω is achieved together with RD1 and RD2. RD1, RD2 450 Ω CS1, CS2 100 nF CS3, CS4 100 nF
4653D–CELL–11/05 U2794B 7. Description of the Evaluation Board Board material: epoxy; εr = 4.8, thickness = 0.5 mm, transmission lines: ZO = 50Ω The board offers the following functions: Test circuit for the U2794B: – The supply voltage and the control inputs GC, PC and PU are connected via a plug strip. The control input voltages can be generated via external potentiometers; then the inputs should be AC-grounded (time requirements in burst mode for power up have to be considered). – The outputs I, IX, Q, QX are DC coupled via an plug strip or can be AC-connected via SMB plugs for high frequency tests e.g. noise figure or s-parameter measurement. The Pins II, IIX, QQ, QQX allow user-definable filtering with 2 external capacitors CII, CQQ. – The offsets of both channels can be adjusted with two potentiometers or resistors. – The LO- and the RF-inputs are AC-coupled and connected via SMB plugs. If transmission line T3 is connected to the RF-input and AC-grounded at the other end, gain and noise performance can be improved (input matching to 50 Ω). – The complementary RF-input is AC-coupled to GND (CRFX = 1 nF), the same appears to the complementary LO input (CNLO = 1 nF). A calibration part which allows to calibrate an s-parameter analyzer directly to the in- and output- signal ports of the U2794B. For single-ended measurements at the demodulator outputs, two OPs (e.g., AD620 or other) can be configured with programmable gain; together with an output-divider network RD = 450Ω to RL = 50Ω, direct measurements with 50Ω load impedances are possible at frequencies t < 100 kHz.
4653D–CELL–11/05 U2794B 9. Package Information 8. Ordering Information Extended Type Number Package Remarks U2794B-NFSH SSO20 Tube, MOQ 830 pcs, Pb-free U2794B-NFSG3H SSO20 Taped and reeled, MOQ 4000 pcs, Pb-free technical drawings according to DIN specifications Dimensions in mm 6.75 6.50 0.25 0.65 5.85 1.30 0.15 0.05 5.7 5.3 4.5 4.3 6.6 6.3 0.15 20 11 11 0
Printed on recycled paper. 4653D–CELL–11/05 © Atmel Corporation 2005 . All rights reserved. Atmel ®, logo and combinations thereof, Everywhere Y ou Are ® and others, are registered trade- marks or trademarks of Atmel Corporation or its subsidiari es. Other terms and product names may be trademarks of others. Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL ’S TERMS AND CONDI- TIONS OF SALE LOCATED ON ATMEL ’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTOR Y WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICU LAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR I NCIDEN- TAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF AT MEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the ri ght to make changes to specifications and product descriptions at any time without notice. Atmel does not make any commitment to update the information contained her ein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not int ended, authorized, or warranted for use as components in applications intended to support or sustain life. Atmel Corporation Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza
77 Mody Road Tsimshatsui
Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Memory San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602
44306 Nantes Cedex 3, France
13106 Rousset Cedex, France
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 RF/Automotive Theresienstrasse 2 Postfach 3535
74025 Heilbronn, Germany
1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123
38521 Saint-Egreve Cedex, France
www.atmel.com/literature