U2790B-MFP ATMEL | Alldatasheet
Document overview
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Technical content
Features
- Supply Voltage 5 V (Typically)
- Very Low Power Consumption: 150 mW (Typically) for -1 dBm Output Level
- Very Good Sideband Suppression by Means of Duty Cycle Regeneration of the LO Input Signal
- Phase Control Loop for Precise 90° Phase Shifting
- Power-down Mode
- Low LO Input Level: -10 dBm (Typically)
- 50-/g87 Single-ended LO and RF Port
- LO Frequency from 100 MHz to 1 GHz
- SO16 Package01/03 Benefits
- No External Components Required for Phase Shifting
- Adjustment Free, Hence Saves Manufacturing Time
- Only Three External Components Necessary, this Results in Cost and Board Space Saving Electrostatic sensitive device. Observe precautions for handling.
Description
The U2790B is a 1000-MHz quadrature modulator using Atmel´s advanced UHF pro- cess. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Adjustment-free application makes the direct converter suitable for all di gital radio systems up to 1000 MHz, e.g., GSM, ADC, JDC. Figure 1. Block Diagram
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Figure 2. Pinning SO16
1 PU Power-up input
10 BB Bi Baseband input B inverse
12 LO i LO input
4583A–CELL–01/03 Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage V S 6V Input voltage V i 0 to VS V Junction temperature T j 125 /g176C Storage temperature range T Stg -40 to +125 /g176C Operating Range Parameters Symbol Value Unit Supply voltage range V S 4.5 to 5.5 V Ambient temperature range T amb -40 to +85 /g176C Thermal Resistance Parameters Symbol Value Unit Junction ambient SO16 R thJA 110 K/W
Electrical Characteristics
Test conditions (unless otherwise specified): V S = 5 V, Tamb = 25°C, referred to test circuit, system impedance Z O = 50 /g87, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* 1.1 Supply voltage range 4, 5 V S 4.5 5.5 V A
1.2 Supply current 4, 5 I S 24 30 37 mA A
2 Baseband Inputs
2.1 Input-voltage range
(differential) 7–8, 9–10 VBBi 1000 1500 mV pp D
2.2 Input impedance
(single ended) ZBBi 3.2 k /g87 D
2.3 Input-frequency
range (5) fBBi 02 5 0 M H z D 2.4 Internal bias voltage V BBb 2.35 2.5 2.65 V A
2.5 T emperature
coefficient TCBB 0.1 <1 mV/ /g176CD
3 LO Input
3.1 Frequency range 12 f LOi 50 1000 MHz D
3.2 Input level (1) PLOi - 12 - 10 - 5 dBm D
3.3 Input impedance Z iLO 50 /g87 D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level /g163 -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For T amb = -30/g176C to +85/g176C and VS = 4.5 to 5.5 V. 5. By low impedance signal source.
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4583A–CELL–01/03
3.4 Voltage standing
wave ratio VSWRLO 1.4 2 D 3.5 Duty cycle range DCR LO 0.4 0.6 D
4 RF Output
4.1 Output level 3 P RFo -5 -1 +2 dBm B
4.2 LO suppression (2) fLO = 900 MHz
fLO = 150 MHz LORFo 35 dB B
4.3 Sideband
suppression (2, 3) fLO = 900 MHz fLO = 150 MHz SBSRFo 35 dB B 4.4 Phase error (4) Pe <1 deg. D 4.5 Amplitude error A e < +0.25 dB D
4.6 Noise floor VBBi = 2 V , VBBi = 3 V
VBBi = VBBi = 2.5 V NFL -132 -144 dBm/Hz D 4.7 VSWR VSWR RF 1.6 2 D 4.8 3rd-order baseband harmonic suppression SBBH 35 45 dB D
4.9 RF harmonic
5 Power-up Mode
5.1 Supply current VPU /g163 0.5 V, VPU = 1 V 4, 5 I PU 10 1µ A D
5.2 Settling time
CSPU = 100 pF , CLO = 100 pF CRFo = 1 nF 6 to 3 t sPU 10 µs D
6 Switching Voltage
6.1 Power-on 1 V PUon 4V D
6.2 Power-up 1 V PUdown 1V D
Electrical Characteristics (Continued) Test conditions (unless otherwise specified): V S = 5 V, Tamb = 25°C, referred to test circuit, system impedance Z O = 50 /g87, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp differential. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. The required LO level is a function of the LO frequency. 2. In reference to an RF output level /g163 -1 dBm and I/Q input level of 400 mVpp differential. 3. Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. 4. For T amb = -30/g176C to +85/g176C and VS = 4.5 to 5.5 V. 5. By low impedance signal source.
Figure 4. Typical GMSK Output Spectrum
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Figure 5. Demo Board Layout Figure 6. OIP3 versus Tamb, LO = 150 MHz, Level -20 dBm
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Figure 10. Typical S11 Frequency Response of the RF Output Figure 11. Typical VSWR Frequency Response of the RF Output
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Figure 14. Typical Supply Current versus Temperature at VS = 5 V Figure 15. Typical Output Power versus LO-Frequency at Tamb = 25°C, Figure 16. Typical required VBBi Input Signal (differential) versus LO Frequency for
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Figure 19. Demo Board Layout ground in the shortest possible way.
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4583A–CELL–01/03
Package Information
Ordering Information
Extended Type Number Package Remarks U2790B-MFP SO16 Tube U2790B-MFPG3 SO16 Taped and reeled technical drawings according to DIN specifications Dimensions in mm 10.0 9.85 8.89 0.4 1.27 1.4 0.25 0.10 5.2 4.8 3.7 3.8 6.15 5.85 0.2 16 9
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