U257 NJSEMI | Alldatasheet
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Technical content
J Ls ., U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U257 Dual N-Channei JFET High Frequency Amplifier
FEATURES
- 9f,>4500u,» From DC to 100MHz
- Matched Vos, g(, and gOB PIN CONFIGURATION TO-99 ABSOLUTE MAXIMUM RATINGS (JA=25°C unless otherwise noted) Gate-Drain or Gate-Source Voltaga (Note 1) -26V Gate Current (Note 1) 60mA Storage Temperature Range -65*C to +200'C Operating Temperature Range -55'C to + 150'C Lead Temperature (Soldering, 10sec) +300*C Power Dissipation (TA=85'C) Derate above 25'C One Side 250mW 3.8mW/-C Both Sides 500mW 7.7mW/°C NOTE: Stresses above tfiose Ssted under "Absolute Maximum Ratings" may causa permanent damage to the device. These are stress ratings only and functional operation of the device at these Of any other notations abort these intscated In the operational suctions onttespaciticttbni to not Anplfatt, Exposure to absolute maximum rating conditions for extended pert- ods may afreet device reliability.
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise specified) Symbol loss BVoss VQS(oH) IDES (is Bis ft» Soss CfM Cn» iSSSl IDSSZ |VGsi-vosz| Bf>1 flu* I&X.1-9M2I Paramittr Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current (Note 2) Common-Source Forward Transconductance Common-Source Forward Trensconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Drain Current Ratio at Zero Gale Voltage (Note 2) Differential Gate-Source Voltage Transconductance Ratio Differential Output Conductance Teat Conditions Vas-16V,Vrjs-0 TA-ISO-C lQ=-1uA.VDS-0 Vos=10V,lD=1nA VDS-IOV,VQS=O VDS=10V, lD=5mA VoG-IOVJo-SmA VDs=10V,lD=6mA VDQ=10V,lD = 5mA (Note 3) f=1kHz f= 100MHz (Note 3) f=1kHz f- 100MHz f-1MHz f- 10kHz VnS-10V,VQs=0 V|xj=iov,i0=emA f=1kHz Mhi -26 4600 4600 0.85 O.B5 Max -100 -260 10,000 10,000 200 200 S 1.2 100 UnMt pA nA V mA MS PF nV m mV fi NOTES: 1. Per transiitor. 2. Pulse test required, pulie wUlh - aoo^s, duty cycle £ 3%. 3. For design reference only, not 100% tested. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors