U2400B

U2400B TEMIC | Alldatasheet

Document overview

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Technical content

Features

@ Three time selections: © Separate charge- and discharge outputs os ann or 12h with subsequent trickle charge Pulse-width modulation facility of charge- and per discharge current for matching to transformer or © Battery temperature and contact monitoring battery data © Charging interrupt for overvoltage or excessive @ Timer clock via mains or internal oscillator temperature @ Reference voltage source @ Automatic pre-discharge possible @ LED-status output for mode indication Case: DIP16, SO16L 5 5 o 949375 . — 200 Hz gy Oscillator Charge| > ) Control unit Lt | Start > PWM ’ fo) ‘Time Status Discharge Reset Stop ‘Sensor monitoring o G fo) time SJ [| selection Event Battery 11 | Continue} Alternating Status contact monitoring Ais, | Ret | charging] red / green display < T | stop Red output Open| charging| indicator 4 Discharge! 9 output Oo Figure 1. Block diagram

! a gq 1.380 fe iy = g2aq y S - fF) Le ag co ee Pa — — 3 fel - « 2 ° zal] 2 a Qe a rz all 2 3l] ee i a 2 Pa a . — af]. 2 yc 3) yoy “Wer = g a 9| 8 & ae | 3 3 a] 8 F: DY WN VW VA es 2 25 i o » WW *y o S Be] ° 5 “ yy z : gai Tz |e \\, se g ZF 216 eal Ag pel [el EBls3 . a2 5/33 : A Efe] [ilealAs a 3 5 g fo] slals er ols “3g | —— H etal f. % & 3 % fo) ok alse s 1° a amd Figure 2. 215) TELEFUNKEN Semiconductors Rev. Al, 21-Nov-96

Before the charging begins, cell is discharged completely. delay. The discharge output at Pin 10 is activated. This is _ (Pins 4 and 5) is exceeded. Figure 3. Flow chart

is indicated by a flashing red display. control unit. alternating red-green flashing. After the limit value _ the positive input for this comparator (figure 9). if a battery is already damaged. Figure 4. Discharge, charge outputs

(figures 9, 10 and 11). This pulse-width modulation deviating from 200 Hz.

0 No battery contact

10 Failure function I

0 Ted Failure with

Figure 5. Status display output

Clock generator The dimensioning of the circuit is given below. a) 200-Hz oscillator = mains .

08 V _ 08 V

0) oscillator frequency of 200 Hz is necessary. Figure 6. 200-Hz oscillator Figure 8. External timer clock input, Pin 16 for different Figure 7. Mains synchronisation charging times

is connected directly to the oscillator as shown in figure 9. mains sync. circuit or from the autonomous oscillator. A Dc voltage in the range of 0.9 to 2.1 V at the compara- pin 14 (figure 7). higher value than the applied voltage at Pin 2. to Pin 7 (ref.). charge or trickle mode. The effective current requirement (Pin 11) or open. maintained by voltage ratio given below: timer clock.

2 PWM Comparator i tt i i in

Figure 9. PWM comparator input voltage circuit for different = /

a: . aan rator is less than one-tenth of divider current. There are two failure-function-possibilities.

3 SX IVE lemperature comparator figure

\\ Vinin COMparator Rntc is calculated at 45°C. Figure 12. Comparator threshold dimensioning circuit 6 | ‘Temperature

Reference point Pin 11, unless otherwise specified [Raat Symbol ae Unit ts 10ps 150 Discharge output Pin 10 Vio Vs + 0.5 Vv Display output Pin9 Vo 6 Vv Synchronisation Pin 1 Voyne Vi Vst2 Vv Alyyne if 10 mA Input voltages: Pin 2 to6 Vi 6 Vv Pin 14 to 16 6 heen ee Tamb = 85°C 0.4 Thermal Resistance DIP16 120 SO16L on PC board Rina 180 K/W SO16L on ceramic 100

Electrical Characteristics

Vs =5 V, Tamb = 25°C, reference point Pin 11, unless otherwise specified |Current consumption _|withoutload Pin | Is | as | | 5.0 | ma | Se ee Voltage limitation Is= 10 mA Pin8 Vs 26.5 29.5 [Max.reference current [Pin 7 | Ine | | Tt | ma [Discharge curent | Pin 10 | To | 100 | 185 | [Chargecurent | Pin 2 |e 100 ||| Vv os [2s Jy Discharge output, I}9 = —100 mA. Pin 10-8 sat 0.8 2.5 TELEFUNKEN Semiconductors 9 (15) Rey. A2, 21-Nov-96

Ry = Rose = 430 kO | fose 200 Hz Low saw-tooth threshold Vi3min 1.0 v [Upper saw-tooth threshold [| sma | | 0 | [Discharge stop | Pin |g || 52545% | | nota eee | [Hysteresis | Pind | Vie | Pts mv [Battery contact monitoring | Pind | Vaimin | 140 | | 200m eee bid al a voltage [Hysteresis | Pin S| Vise | Tt Tm Open wire voltage PinS | Vrsmax_| W7-0.25 V7-0.02 Vv PWM-Comparator input Pin 2 V2 0.9 3.0 v voltage range | PWM-Comparator- Pin 2 V2 hyst 18 40 mV Hysteresis ger | peer |] tel LF f = 50 Hz (mains) or Pin 13 = ground 1

200 Hz (oscillator) Pin 13 =+3 V 12

[Ourputcurent | Pin TTT ts ma eee ee et eT Pin 9-7 Vat 0.5 10 (15) TELEFUNKEN Semiconductors Rey, Al, 21-Nov-96

Applications

Quick charge for NiCd-batteries with PWM method whereas the reference point for other components of the Figure 15 describe the current regulations with PwM, _ 1Cisdifferenti.e., positive shunt drop voltage. Current set Ria point is given across the voltage divider Rjs/P; whereas Mean value of the charge current for the battery which is ‘ ‘ + . “ the actual value across Rjg with a common point, the created across power transistor T is so dimensioned that 1°, ("0 8 it is independent of supply and battery voltage. For the ““*" 20. purpose of regulation, load current is obtained via resistor The output voltage of operational amplifier delivers the R20 = 0.2 Q, whose voltage drop serves as actual value for _ voltage for PWM-control at Pin 2. Current regulation acts the operation amplifier. It is however recommended to _ only on charge current, whereas discharge current is spe- use PNP-differential input stage due to its relatively low ified by R14. loss of power across the shunt resistance (P = 0.2 W, @ Maxi and mini 1 djust for vari 200 mV with 1 A charge current) faximum and minimum voltage adjustment for variety . of cells (batteries) can be calculated with R4/Ry and GND is the negative supply for operational amplifier Rs/R3 ratios. onosee O — BD442 010 [s] [ss] i on Mode’ Time Charge GND Discharge Status BYT77 BD U2400B veak ] current Syne PWM Ose Vax Temp Vain Ver $V limitation a oe a re 0. Dy a 1% Oo oO L358 09) — > UW) | OSD i | Pune = Res =loKay] = <= |< BD441 fe) [es Us U4 O l [Joz2

2 Ce ;

| em That aren pin es Wen &p TLHR 5400 ‘TLHG 5400 R) =390kQ Ro, Rio = 180 Cy, C7 = 100 pF Rp, R3 = see table 1, under figure 16 Ry, R13, Ris = 10kQ Cy =15nF Ra, Rs, Rig, Rig, Rig = 100kQ Ry7=15kQ C3 = 10 uF Re =30kQ Ry =0.2Q C4, Cs, Cg = 0.33 WE Ry, Rg = 2709 P)=1kQ D2 =1N4148 Figure 15. © Charge current regulation @ Temperature monitoring © Automatic pre-discharge © Status indication @ Charge time: 0.5 h, 1h, 12h TELEFUNKEN Semiconductors 115) Rey. A2, 21-Nov-96

4 Q@ 98

949389 TLHRS400 ‘TLHGS400

Table 1. Resistances R2 and R3 dimensioning for figures 15 and 16

Vy = 230 V~ Cc} BZX83/C24 Ria Rf] Rg —— — BD6AB BC639 [~~] 28/40 V3.5. A lw [is] [i] ln] Lo | Mode ‘Time Charge GND Discharge Status DY BYTS6 |) U2400B peak Ru | current Syne PWM Osc Vmax ‘Temp Vinin Veer +V5 limitation a a ee | Q@ °° 8 P, N ] | ] | I NIC Sensor Py == Charge 7 Ros =0KQ4] = current B value =3474 set point a} Bb64? Us Des | ? a 949390 ‘TLHRS400 TLHGS400 Ry) =510kQ Ro, Rio=2.2kQ/ 05 W C =470 pF Ro, R3 = see table 2 Rip, Ris = 10kQ Cy =22nF Ry, Rs = 100 kQ P) =10kQ C3 =10pF Re =30kQ Rig =220Q/1W C4, Cs = 0.33 WE Ry, Rg= 2102 Ry =1.5kQ Figure 17. @ Charge voltage higher than IC supply Table 2. Resistances Ry and R3 dimensioning © Charge time 2h Cell quantit : ; Ro 15kQ | 1.0kQ @ Pre-discharge function R3 15kQ @ Temperature monitoring TELEFUNKEN Semiconductors 1315) Rey, A2, 21-Nov-96

Package Information

7.82 20.0 max 7.42 ee ren p | Reet ett et ett ag ——— WHAM | 0.5 min 33 | 6.39 max \\ 9.75 1.64 0.58 Alternative 17.78 / “\\ 16 9 \\ daudhudhwdhudhedhedhedh a ri} 2S _——— ee lec ens We We WW We WW seatction vols 1 8 —_ Dimensions in mm . los 8 I Ee | 2s 270 WAAR M8 ow | Fal f 13 03s" | 18 nn) tos J oonnhoaag Mf) ff fT — a¢é ee | technical drawings securing DIN 1 95 11493 14(15) TELEFUNKEN Semiconductors Rev, Al, 21-Nov-96

Senecio, U2400B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1, Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances, We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized. application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 TELEFUNKEN Semiconductors 15 (15) Rey. A2, 21-Nov-96