TW083N65C TOSHIBA | Alldatasheet

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MOSFETs Silicon Carbide N-Channel MOS TW083N65C Start of commercial production 2022-07 1. Applications

  • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 83 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 0.6 mA) (6) Enhancement mode. 3. Packaging and Internal Circuit TO-247 1: Gate 2: Drain (heatsink) 3: Source 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation
  1. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Drain current (pulsed) Power dissipation Channel temperature Storage temperature Mounting torque ( Tc = 25 ) ( Tc = 100 ) ( Tc = 25 ) ( Tc = 100 ) ( Tc = 25 ) Symbol VDSS VGSS ID ID IDP IDP PD Tch Tstg TOR Rating 650 +25/-10 111 175 -55 to 175 0.8 Unit V A W N m Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 1.350 Unit Note 1: Ensure that the channel temperature does not exceed 175 . Note: This transistor is sensitive to electrostatic discharge and should be handled with care. It should be used for switching applications. 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation
  1. Electrical Characteristics 6.1. Static Characteristics (T a = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 2) Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) Test Condition VGS = +25/-10 V, VDS = 0 V VDS = 650 V, VGS = 0 V Ta = 150 , VDS = 650 V, VGS = 0 V ID = 4 mA, VGS = 0 V VDS = 10 V, ID = 0.6 mA VGS = 18 V, ID = 15 A Ta = 150 , VGS = 18 V, ID = 15 A Min 650 3.0 Typ. Max ±0.1 5.0 113 Unit µA V mΩ Note 2: Please be sure to apply IGSS (VGS = 25 V) before the Vth test. 6.2. Dynamic Characteristics (T a = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Output charge Coss stored energy Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss Qoss Eoss rg tr ton tf toff Test Condition VDS = 400 V, VGS = 0 V, f = 100 kHz VDS = OPEN, f = 1 MHz See Fig. 6.2.1 Min Typ. 873 3.4 110 4.4 Max Unit pF nC µJ Ω ns VDD ≈ 400 V VGS = 0 V / 18 V ID = 15 A RL = 27 Ω RG = 4.7 Ω Duty ≤ 1 %, tw = 1µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (T a = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD ≈ 400 V, VGS = 18 V, ID = 15 A Min Typ. 3.9 Max Unit nC 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

6.4. Source Drain Characteristics (T a = 25 unless otherwise specified) Characteristics Reverse drain current (DC) Reverse drain current (pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current (Note 3) (Note 3) Symbol IDR IDRP VDSF trr Qrr Irr Test Condition Tc = 25 , VGS = -5 V Tc = 100 , VGS = -5 V Tc = 25 , VGS = 18 V Tc = 100 , VGS = 18 V Tc = 25 , VGS = -5 V Tc = 100 , VGS = -5 V Tc = 25 , VGS = 18 V Tc = 100 , VGS = 18 V IDR = 8 A, VGS = -5 V Ta = 150 , IDR = 8 A, VGS = -5 V IDR = 10 A, VGS = 0 V, VDD = 400 V, -dIDR/dt = 1000 A/µs Min Typ. -1.35 -1.57 189 8.4 Max -1.80 Unit A V ns nC A Note 3: Ensure that the channel temperature does not exceed 175 . 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

  1. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation
  1. Characteristics Curves (Note) Fig. 8.1 ID - V DS Fig. 8.2 ID - V DS Fig. 8.3 ID - V GS Fig. 8.4 Vth - T a Fig. 8.5 RDS(ON) - I D Fig. 8.6 RDS(ON) - I D 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

Fig. 8.7 RDS(ON) - T a Fig. 8.8 RDS(ON) - V GS Fig. 8.9 IDR - V DS Fig. 8.10 IDR - V DS Fig. 8.11 VDSS - T a Fig. 8.12 Dynamic Input Characteristics 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

Fig. 8.13 C - V DS Fig. 8.14 Eoss - V DS Fig. 8.15 rth(ch-c) - t w (Guaranteed Maximum) Fig. 8.16 Safe Operating Area (Guaranteed Maximum) Fig. 8.17 PD - T c (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 6.15 g (typ.) Package Name(s) TOSHIBA: 2-16L1A Nickname: TO-247 2022-06-16 Rev.1.0 ©2022 Toshiba Electronic Devices & Storage Corporation

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