TSN10A80 NIEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
çççççççççççççççççççççççççççççççç THYRISTOR Type ɿɿɿɿTSN10A80TSN10A80TSN10A80TSN10A80 çççççççççççççççççççççççççççççççç Absolute Maximum Ratings Rating Symbol Conditions Max. Rated ValueUnit Repetitive Peak off-state Voltage VDRM Tj=25°Cç 800ç V Repetitive Peak On-State Current *ç ITRM Tc ≤ 100 °C, V DM ≤ 400V IG ≥ 80mA, dig/dt ≥ 0.5A/µs tw ≤ 1.0µsɼdi/dt ≤ 1500A/µs duty ≤ 0.005℅ 500 A Repetitive Peak Forward Current *ç IFRM Tc ≤ 100 °C, tw ≤ 1.0µs duty ≤ 0.005℅ 500 A Critical Rate of Rise of Off-State Voltage Permissible Rate of Down of On-State Current * di/dt Tc ≤ 100 °C, V DM ≤ 400V IG ≥ 80mA, dig/dt ≥ 0.5A/µs ITM ≤ 500A, tw ≤ 1.0µs 50Hz, 1min., without Cooling Fin
1500 A/µs
Peak Gate Power P GM f ≥ 50Hz, duty ≤ 10℅ 5 W Average Gate Powerç PG(AV) 0.5 W Peak Forward Gate Currentç IGM f ≥ 50Hz, duty ≤ 10℅ 2 A Peak Forward Gate Voltageç VGM 10 V Peak Reverse Gate Voltageç VRGM 5 V Operating Junction Temperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +150 °C * notes : Test Circuit & Current Wave Form 0.5•ITM t tw ITM di/dt = 0.4 • ITM/t 0.1•ITM R SW L VDM C Thyristor Sample 10A 800V TO-262 Cnstruction : Planner Structure Reverse Conducting Futures : High VDRM & Permissonable di/dt Application : Stater for HID Lump Bullust Circuit weight : 1.45g
ç ç Electrical Characteristics (Tj = 25 °C) Characteristics Symbolç Conditionsç Min. Typ. Max. Unit Peak Off-State Currentç IDMç VDM = VDRM 100 µAç Peak On-State Voltageç VTMç ITM=20A 1.50 A Peak Forward Voltageç VFMç IFM=10A 1.50 A Gate Trigger Currentç IGTç 20 mA Gate Trigger Voltageç VGTç VDM=6V, RL=10ohm 1.0 V Holding Currentç IHç IG=50mA, I TM=1A 7 m A Latching Currentç ILç IG=50mA 13 m A Thermal Resistanceç Rth(j-c)ç Junction to Case 5 °C/Wç Thermal Resistanceç Rth(j-a)ç Junction to Ambient 80 °C/Wç ç TSN10A08 OUTLINE DRAWING (Dimension : mm)