PD10M440L_1 NIEC | Alldatasheet
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MOSFETMOSFETMOSFETMOSFET 70A70A70A70A 450450450450～～～～500V500V500V500V PD10M441L PD10M440 L P2H10M441Lç P2H10M440L ѹɾΫϥε G r a d e ߲ Rating ه ߸ Symbol PD10M441L/P2H10M441L PD10M440L/P2H10M440L Unit 450 500 ిѹ Drain-Source Voltage VDSS VGS=0V V Gate-Source Voltage VGSS ʶ20 V Duty=50% 70ʢ̩c=25ˆʣ υϨΠϯిྲྀʢ࿈ଓʣ Continuous Drain Current D.C. ID 50ʢ̩c=25ˆʣ A ύϧευϨΠϯిྲྀ Pulsed Drain Current IDM 140ʢ̩c=25ˆʣ A Total Power Dissipation PD 500ʢ̩c=25ˆʣ W Թൣғ Operating Junction Temperature Range Tjw ʵ40ʙ+150ˆ ˆ อଘԹൣғ Storage Temperature Range Tstg ʵ40ʙ+125ˆ ˆ 2000 ઈԑѹ RMS Isolation Voltage Viso ࢠ - ؒAC1çTerminals to Base, AC 1 min . V 3.0ʢຊମऔçModule Base to Heat sinkʣ కτϧΫ Mounting Torque Ftor 2.0෦çBus bar to Main Terminalsʣ Nɾm PD10M441L/440LPD10M441L/440LPD10M441L/440LPD10M441L/440L P2H10M441L/440LP2H10M441L/440LP2H10M441L/440LP2H10M441L/440L ྔçApproximate Weight :220g ྔçApproximate Weight :220g ˙最大定格最大定格最大定格最大定格ç Maximum Ratings 108.0 108.0
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-308 - 120 100 002468 10 12 DRAIN CURRENT I D (A) DRAIN TO SOURCE VOL TAGE VDS (V) TC=25õ 250 s Pulse Test 10V VGS=5V Fig. 1 Typical Output Characteristics 01 2 5 10 20 50 100 CAP ACIT ANCE C (nF) DRAIN TO SOURCE VOL TAGE VDS (V) VGS=0V f=1kHz Coss Crss Ciss Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 1000 500 100 200 102 5 10 20 50 200100 SWITCHING TIME t (ns) RG=7 VDD=250V TC=25õ 80 s Pulse Test td(off) td(on) tr tf Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 500 200 100 0.51 2 5 10 20 50 100 500200 1000 DRAIN CURRENT I D (A) DRAIN TO SOURCE VOL TAGE VDS (V) TC=25õ Tj=150õMAX Single Pulse 10 s 1ms 10ms DC 100 s -441L -440L Operation in this area is limited by RDS (on) Fig. 10 Maximum Safe Operating Area 00 4 8 12 16 DRAIN T O SOURCE ON VOL TAGE V DS (on)(V) GA TE TO SOURCE VOL TAGE VGS (V) TC=25õ 250 s Pulse Test ID=85A 40A 20A Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage 00 100 200 300 400 500 600 GA TE T O SOURCE VOL TAGE V GS (V) TO TAL GATE CHRAGE Q g (nC) ID=50A 100V 250V 400V VDD= Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 120 100 SOURCE CURRENT I S (A) SOURCE T O DRAIN VOLTAGE VSD (V) 250 s Pulse Test Tj=125õ Tj=25õ Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 10-2 100 10-1 10-5 10-4 10-3 10-2 10-1 100 101 NORMALIZED TRANSIENTTHERMAL IMPEDANCE th(j-c) / R th(j-c) PULSE DURA TION t (s) Per Unit Base Rth(j-c)=0.25õ/W
1 Shot Pulse
Fig. 11 Normalized Transient Thermal impedance(MOSFET) 0.2 0.1 0-40 0 40 80 120 160 DRAIN T O SOURCE ON VOL TAGE V DS (on)(V) JUNCTION TEMPERA TURE Tj ( ) VGS=10V 250 s Pulse Test ID=85A 40A 20A Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 0.5 0.2 0.12 5 10 20 50 100 200 SWITCHING TIME t ( s) ID=40A VDD=250V TC=25õ 80 s Pulse Test SERIES GA TE IMPEDANCE R G ( ) toff ton Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 2000 1000 200 500 100 0 100 200 300 400 500 600 REVERSE RECOVER Y TIME t rr (ns) REVERSE CURRENT I R (A) IS=70A IS=40A Tj=150õ -dis/dt (A/ s) trr IR Fig. 9 Typical Reverse Recovery Characteristics M O S F E T