TSM4539DCS-RLG VBSEMI | Alldatasheet

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N- and P-Channel 30 V (D-S) MOSFET

FEATURES

  • H alogen-free According to IEC 61249-2-21 Definition  TrenchFET® Power MOSFET 100 % Rg and UIS Teste d  Compliant to RoHS Directive 2002/95/EC

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 Motor Drive Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. PRODUCT SUMMARY VDS (V) R DS(on) (Ω) ID (A)a Qg (Typ.) 0.018 at VGS = 10 3N-Channel 0 V 8e 6.20.0 at V 8GS = 8 V e 0.040 atVGS - 3P-Channel 0 = - 10 V - 8e 0.044 at VGS 18.5= - 8 V - 8e 0.050 atVGS= - 4.5 V - 7.5 G 1 D1 D2S2 G2 D2 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit 3VDrain-Source Voltage DS 0 - 30 V± VGate-Source Voltage GS 20 ± 20 TC Continuous Drain Current (TJ = 150 °C) = 25 °C 8 ID e - 8e TC A = 70 °C 6.8 - 6.8 TA = 25 °C 6.8b, c - 6.6b, c TA = 70 °C 5.4b, c - 5.3b, c IPulsed Drain Current (10 µs Pulse Width) DM 40 - 40 TCSource-Drain Current Diode Current = 25 °C IS 2.6 - 2.6 TA = 25 °C 1.6b, c - 1.6b, c IPulsed Source-Drain Current SM 40 - 40 Single Pulse Avalanche Current I L = 0.1 mH AS 10 - 20 ESingle Pulse Avalanche Energy AS 52 0 m J TC Maximum Power Dissipation = 25 °C PD 3.1 3.2 TC W = 70 °C 22 .1 TA = 25 °C 2b, c 2b, c TA = 70 °C 1.28b, c 1.28b, c TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter N-Ch Symbol annel P-Channel Unit Typ. Max. Typ. Max. t ≤Maximum Junction-to-Ambientb, d 10 s RthJA 50 62.5 47 62.5 °C/WMaximum Junction-to-Foot (Drain) RSteady State thJF 30 40 29 38  MobilePower Bank TSM4539DCS RLG-VB www.VBsemi.com g 0.0 at24 VGS = 4.5 V TSM4539DCS RLG-VB Datasheet

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Typ.Min. a Max. Un it Static 3VGS = 0 V, IDVDrain-Source Breakdown Voltage DS = 250 µA 0 V N-Ch VGS = 0 V, ID = - 250 µA P-Ch - 30 IDΔVDS/TVDS Temperature Coefficient J = 250 µA 40N-Ch ID = mV/°C - 250 µA P-Ch - 34 IDΔVGS(th)/TVGS(th) Temperature Coefficient J = 250 µA - 4.1N-Ch ID = - 250 µA P-Ch 5 VDS = VGS, ID = 2 VGS(tGate Threshold Voltage h) 50 µA V N-Ch VDS = VGS, ID = - 250 µA P-Ch - 2.0 VDS = 0 V, VGS = ± 12 IGate-Body Leakage GSS V ± 100 nA N-Ch VDS = 0 V, VGS = ± 12 V P-Ch ± 100 VDS = 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1N-Ch VDS = - 30 V, VGS µA = 0 V P-Ch - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10N-Ch VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb VDS = 5 V, VGS ID(on) = 10 V N-Ch 20 AVDS = - 5 V, VGS = - 10 V P-Ch - 20 Drain-Source On-State Resistanceb 0.0VGS = 10 V, ID RDS(on) = 6.8 A 18N-Ch VGS = - 10 V, ID Ω = - 8 A P-Ch 0.040 0.0VGS = 8 V, ID = 6.7 A 20N-Ch VGS = - 8 V, ID = - 6.5 A P-Ch 0.044 0.0VGS = 4.5 V, ID = 6.6 A 24N-Ch VGS = - 4.5 V, ID = - 5 A P-Ch 0.050 Forward Transconductanceb VDS = 15 V, ID gfs = 6.8 A 27 S N-Ch VDS = - 15 V, ID = - 6.7 A P-Ch 25 Dynamica CInput Capacitance iss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz 0N-Ch pF P-Ch 620 9COutput Capacitance oss 5N-Ch P-Ch 115 CReverse Transfer Capacitance rss 33N-Ch P-Ch 57 VDS = 20 V, VGS = 10 V, ID QTotal Gate Charge g = 10 A 6 10N-Ch VDS = - 20 V, VGS = - 10 V, ID nC = - 10 A P-Ch 41.5 63 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A 8 7N-Ch P-Ch 16 22 1.QGate-Source Charge gs 6N-Ch P-Ch 4.3 1.QGate-Drain Charge gd 4N-Ch P-Ch 7 RGate Resistance g TSM4539DCS RLG-VB www.VBsemi.com g 2.01.0 - 1.0

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended per iods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Typ.Min. a Max. Unit Dynamica td(Turn-On Delay Time on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 4 8N-Ch ns P-Ch 10 16 tRise Time r 10 17N-Ch P-Ch 19 5 2tTurn-Off Delay Time d(off) 16 2N-Ch P-Ch 23 26 tFall Time f 5 9N-Ch P-Ch 10 16 tTurn-On Delay Time d(on) N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 0 16N-Ch P-Ch 26 3 5 1tRise Time r 1 20N-Ch P-Ch 16 26 1tTurn-Off Delay Time d(off) 3 22N-Ch P-Ch 16 26 tFall Time f 5 9N-Ch P-Ch 16 26 Drain-Source Body Diode Characteristics TCIContinuous Source-Drain Diode Current S = 25 °C 2.6N-Ch AP-Ch - 2.6 Pulse Diode Forward Currenta N-Ch 4ISM P-Ch - 40 ISVBody Diode Voltage SD = 5.4 A 0.81 1.2 V N-Ch IS = - 2 A P-Ch - 0.77 - 1.2 tBody Diode Reverse Recovery Time rr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 2 25N-Ch nsP-Ch 31 57 QBody Diode Reverse Recovery Charge rr 10 17N-Ch nCP-Ch 29 47 tReverse Recovery Fall Time a 10N-Ch nsP-Ch 13 N-ChtReverse Recovery Rise Time b P-Ch 23 TSM4539DCS RLG-VB www.VBsemi.com g

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 0.5 1 1.5 ID - Drain Current (A) VGS = VDS - Drain-to-Source Voltage (V)

10 V thru 4 V

VGS = 3 V 0.010 0.015 0.020 0.025 0.030 0 10 30 RDS(on) - On-R esistance (Ω) ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 3 VGS - Gate- 6 9 12 15 to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V = 32VDS V Transfer ID = 6.8 A Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.6 1.2 1.8 2.4 3 VGS - Gate- ID - Drain Current (A) to-Source Voltage (V) TC = 25 °C TC = 125 °C = - 55 °TC C 200 400 600 800 1000 0 10 20 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss CossCrss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 RDS(on) - On-Re 150 sistance (Normalized) TJ - Junction Temperature (°C) ID = 6.8 A VGS = 10 V; 4.5 V TSM4539DCS RLG-VB www.VBsemi.com g

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 0.0 0.3 0.6 0.9 IS - So 1.2 urce Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.7 1.3 1.6 1.9 - 50 - 25 0 5025 75 100 VGS(th) 125 150 (V) TJ - Temperature (°C) ID On-Resistance vs. Gate-to = 250 μA -Source Voltage Single Pulse Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 VGS - Gate-to- RDS(on) - On-Resistance (Ω) Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 6.8 A . 0 111 0 000 .01 Time (s) Power (W) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 0.1 1 10 ID - Drai 100 n Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s TSM4539DCS RLG-VB www.VBsemi.com g

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is b ased on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 0 25 50 75 100 Power 125 150 (W) TC - Case Temperature (°C) Power Derating, Junction-to-Ambient 1.25 1.0 0.75 0.50 0.25 0.0 0 25 50 Power 75 100 125 150 (W) TA - Ambient Temperature (°C) TSM4539DCS RLG-VB www.VBsemi.com g

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 10 10 1000-1-4 100 0.2 0.1 Ef Square Wave Pulse Duration (s) Normalized fective Transient Thermal Impedance 0.1 0.01 Notes: PDM Duty1. Cycle, D = 2. Per Unit Base = RthJA = 120 °C/W t 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 101-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Ef Square Wave Pulse Duration (s) fective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 TSM4539DCS RLG-VB www.VBsemi.com g

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge VGS =1 0 V thru 4V VGS =3V VGS =2V ID VDS - Drain-to-Source Voltage (V) - Drain Current (A) 0.010 0.030 0.050 0.070 0.090 0 1 02 03 04 0 ID - Drain Current (A) VGS = 8 V VGS = 4.5 V VGS = 10 V 0 9 18 27 36 45 ID =1 0A VDS =2 0V VDS =3 0V VDS =1 0V VGS Qg - Total Gate Charge (nC) - Gate-to-Source Voltage (V) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 01234 5 TC = 125 °C TC = 25 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Crss 200 400 600 0 8 16 24 32 40 Ciss Coss RDS(on) - On-Resistance (Ω) VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =8A VGS =4 .5 V VGS =1 0V RDS(on) - On-Resistance TJ - Junction Temperature (°C) (Normalized) TSM4539DCS RLG-VB www.VBsemi.com g

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C IS VSD - Source-to-Drain Voltage (V) - Source Current (A) - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID =5m A VGS(th) ID = 250 μA Variance (V) On-Resistan TJ - Temperature (°C) ce vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 012 345 67 189 0 TJ =2 5 °C TJ = 125 °C ID =8A VGS RDS(on) - On-Resistance (Ω) - Gate-to-Source Voltage (V) 0 .0 0 11100 .01 0.1 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 0.01 100 100 0.01 0.1 10 s 10 ms 0.1 1 10 TA = 25 °C Single Pulse 1m s DCBVDSS Limited 100 ms Limited by RDS(on)* ID VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A) TSM4539DCS RLG-VB www.VBsemi.com g

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is b ased on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 4.0 3.2 2.4 1.6 0.8 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 1.5 1.2 0.9 0.6 0.3 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) TSM4539DCS RLG-VB www.VBsemi.com g

P-CHANNEL TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 10 10 1000-1-4 100 0.2 0.1 Normalized Ef Square Wave Pulse Duration (s) fective Transient Thermal Impedance 0.1 0.01 Notes: PDM Duty1. Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W t =P DMZthJA3. TJM -T A (t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 101-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Ef Square Wave Pulse Duration (s) fective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 TSM4539DCS RLG-VB www.VBsemi.com g

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm BA 0.004"L1 A e D SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS 0.25 mm (Gage Plane) -012 S TSM4539DCS RLG-VB www.VBsemi.com g

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) 0.172 Dimensions in Inches/(mm) (4.369) 0.047 0.152 (3.861)(1.194) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads 0.022 (0.559) TSM4539DCS RLG-VB www.VBsemi.com g

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