TS420 STMICROELECTRONICS | Alldatasheet

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Technical content

September 2000 - Ed: 3 MAIN FEATURES:

DESCRIPTION

Thanks to highly sensitive triggering levels, the TS420 series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies, ... Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. Symbol Value Unit IT(RMS) 4A VDRM /VRRM 600 and 700 V IGT 200 µA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tl = 115°C 4 A IT(AV) Average on-state current (180° conduction angle) Tl = 115°C 2.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C A tp = 10 ms 30 I²tI ²t Value for fusing tp = 10 ms Tj = 25°C 4.5 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A PG(AV) Average gate power dissipation Tj = 125°C 0.2 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G A K DPAK (TS420-B) A AK G A AK G A GAK IPAK (TS420-H) TO-220AB (TS420-T)

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES S = copper surface under tab PRODUCT SELECTOR

ORDERING INFORMATION

Symbol Test Conditions TS420 Unit IGT VD = 12 V RL = 33 Ω MAX. 200 µA VGT MAX. 0.8 V VGD VD = VDRM RL = 3.3 kΩ RGK = 220 Ω Tj = 125°C MIN. 0.1 V VRG IRG = 10 µA MIN. 8V IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA dV/dt VD = 67 % VDRM RGK = 220 Ω Tj = 125°C MIN. 5 V/µs VTM ITM = 8 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V R d Dynamic resistance Tj = 125°C MAX. 90 m Ω IDRM IRRM VDRM = VRRM R GK = 220 Ω Tj = 25°C MAX. 5 µA Tj = 125°C 1 mA Symbol Parameter Value Unit R th(j-c) Junction to case (DC) 3.0 °C/W R th(j-a) Junction to ambient (DC) S = 0.5 cm² DPAK 70 °C/W IPAK 100 TO-220AB 60 Part Number Voltage (xxx) Sensitivity Package

600 V 700 V

TS420-xxxB X X 200 µA DPAK TS420-xxxH X X 200 µA IPAK TS420-xxxT X X 200 µA TO-220AB PACKING MODE Blank: Tube -TR: DPAK tape & reel VOLTAGE: 600: 600V 700: 700V SENSITIVITY: 20: 200µA CURRENT: 4A SCR SERIES PACKAGE: B: DPAK H: IPAK T: TO-220AB

Note: x = voltage Part Number Marking Weight Base Quantity Packing mode TS420-x00B TS420x00 0.3 g 75 Tube TS420-x00B-TR TS420x00 0.3 g 2500 Tape & reel TS420-x00H TS420x00 0.4 g 75 Tube TS420-x00T TS420x00T 2.3 g 50 Tube Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus case temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK). Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board) for DP AK. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 P(W) a = 180° IT(av)(A) 360° a 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IT(av)(A) DC a = 180° Tcase(°C) 0 25 50 75 100 1250.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(av)(A) a = 180° DC a = 180° DPAK (S = 0.5cm2) IPAK DC Tamb( °C)

Fig. 4: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t. -40 -20 0 20 40 60 80 100 120 1400.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C] IGT IH & IL Rgk = 1kW Tj(°C) IH[Rgk] / IH[Rgk = 1k ]Ω Rgk(kΩ) 0.10 1.00 10.00 Tj=125°C VD=0.67xVDRM dV/dt[Rgk] / dV/dt [Rgk = 220 ]Ω Rgk(Ω ) 0 2 4 6 8 10 12 14 16 18 20 220 VD = 0.67 x VDRM Tj = 125°C Rgk = 220W dV/dt[Cgk] / dV/dt [Rgk = 220W ] Cgk(nF) 1 10 100 10000 ITSM(A) Non repetitiv e Tj initial = 25 °C Repetitive Tcase = 115 °C Number of cycles One cycle tp = 10ms 0.01 0.10 1.00 10.001 100 300 ITSM(A),I2t(A2s) Tj initial = 25 °C ITSM I2t dI/dt limitattion tp(ms)

Fig. 10: On-state characteristics (maximum values). Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm) (DPAK). 1.0 10.0 50.0 ITM(A) Tj max.: Vto = 0.85V Rd = 90mW Tj = Tj max. Tj = 25°C VTM(V) 02468 1 0 1 2 1 4 1 6 1 8 2 00 100 Rth(j-a) ( °C/W) S(cm 2)

DPAK (Plastic) REF . DIMENSIONS Millimeters Inches Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 R 0.2 typ. 0.007 typ. V2 0° 8° 0° 8° R R FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 1.61.6 2.32.3

IPAK (Plastic) REF . DIMENSIONS Millimeters Inches A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.035 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 V1 10° 10° H L L1 G B D C A B3B6 E

TO-220AB (Plastic) REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. A C D Dia F G E M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com