TPW60R075C WUMC | Alldatasheet

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Technical content

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company

FEATURES

 Very l ow FOM RDS(on)×Qg  100% av alanche tested  Ro HS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPV60R075C TO-3PN 60R075C TPW60R075C TO-247 60R075C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 600 V Continuous Drain Current ID 47 A Pulsed Drain Current (note1) IDM 141 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 1120 mJ Avalanche Current (note1) IAR 15 A Repetitive Avalanche Energy (note1) EAR 1.76 mJ Power Dissipation (TC = 25ºC) PD 390 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.32 K/W Thermal Resistance, Junction-to-Ambient RthJA 62 600V Super-Junction Power MOSFET A ll data sheet.com

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V, TJ = 25ºC -- -- 1 μA VDS = 600V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 20A -- 60 75 mΩ Forward Transconductance (Note3) gfs VDS = 10V, ID = 20A -- 40 -- S Dynamic Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 5100 -- pF Output Capacitance Coss -- 225 -- Reverse Transfer Capacitance Crss -- 6.2 -- Total Gate Charge Qg VDD = 480V, ID = 47A, VGS = 10V -- 90 -- nC Gate-Source Charge Qgs -- 24 -- Gate-Drain Charge Qgd -- 30 -- Turn-on Delay Time td(on) VDD = 400V, ID = 26A, RG = 1.7Ω -- 16 -- ns Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 83 -- Turn-off Fall Time tf -- 5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 47 A Pulsed Diode Forward Current ISM -- -- 141 Body Diode Voltage VSD TJ = 25ºC, ISD = 47A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time trr VR = 400V, IF = 26A, diF/dt = 100A/μs -- 720 -- ns Reverse Recovery Charge Qrr -- 19 -- μC Peak Reverse Recovery Current Irrm -- 52 -- A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μ s, Duty Cycle ≤ 1% A ll data sheet.com

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform A ll data sheet.com

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company TO-3PN A ll data sheet.com

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company TO-247 A ll data sheet.com

TPV60R075C, TPW60R075C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. W uxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. A ll data sheet.com