135N68A

135N68A WUMC | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 9

Technical content

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications

Applications

 Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial VDS 68V ID (at VGS =10V) 135A RDS(ON) (at VGS =10V) < 5.0mΩ 100% UIS Tested Part Number Package Type Form Marking TTB135N68A TO-263 Tape&Reel 135N68A TTP135N68A TO-220 Tube 135N68A Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Units Drain-Source Voltage VDS 68 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC =25º C ID 105 A TC =100ºC 105 Pulsed Drain Current A IDM 405 A Avalanche Current A IAS 44 A Single Pulse Avalanche Energy L =0.3mH A EAS 290 mJ Power Dissipation C TC =25ºC PD 160 W

80 W TC =100ºC

Junction and Storage Temperature Range TJ, TSTG -55 to 175 ºC Thermal Characteristics Parameter Symbol Maximum Units Maximum Junction-to-Case Steady-State RƟJC 0.95 ºC/W Maximum Junction-to-Ambient Steady-State RƟJA 100 Product Summary 68V N-Channel Trench MOSFET(Preliminary) TO-263 General Description TO-220

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Value Units Min Typ Max STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µ A,VGS =0V 68 V IDSS Zero Gate Voltage Drain Current VDS =68V, VGS =0V TJ =25ºC 1 μA TJ =100ºC 25 IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µ A 2 3 4 V RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A 4.2 5 mΩ gFS Forward Transconductance VDS = 5V, ID =20A 30 S VSD Diode Forward Voltage IS =20A, VGS =0V 1 V IS Maximum Body-Diode Continuous Current B 105 A DYNAMIC PARAMETERS Ciss Input Capacitance VGS =0V, VDS =30V, f =1MHZ 6646 pF Coss Output Capacitance 443 Crss Reverse Transfer Capacitance 396 SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS =10V,VDS =30V, ID =30A 114 nC Qgs Gate Source Charge 26 Qgd Gate Drain Charge 34 tD(on) Turn-On Delay Time VGS =10V,VDS =30V, ID =30A, RG =3Ω ns tr Turn-On Rise Time 11 TD(off) Turn-Off Delay Time 55 tf Turn-Off Fall Time 15 trr Body Diode Reverse Recovery Time IF =20A, di/dt =100A/μs 33 ns Qrr Body Diode Reverse Recovery Charge 51 nC A. Single pulse width limited by maximum junction temperature. B. The maximum current rating is package limited. C. The power dissipation PD is based on TJ(MAX) =175ºC, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Figure A：Gate Charge Test Circuit and Waveforms Figure B：Resistive Switching Test Circuit and Waveforms Figure C：Unclamped Inductive Switching (UIS) Test Circuit and Waveforms

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-263(集佳) Unit：mm Unit：mm Symbol Min Nom Max Symbol Min Nom Max A1 1.25 1.30 1.35 E5 7.80 - - A2 2.20 2.40 2.60 e 2.54BSC c 0.47 - 0.60 L1 - - 1.75 D1 9.10 9.20 9.30 L4 0.25BSC D4 8.00 - - Ɵ 0o 8o

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-220(华天)

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com TO-220(集佳)

TTB135N68A,TTP135N68A Wuxi Unigroup Microelectronics CO.,LTD. V1.0 www.tsinghuaicwx.com Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.