TPV597

TPV597 NJSEMI | Alldatasheet

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Technical content

^s.mi-(lonciuct oi , Dnc. The RF Line UHF Linear Power Transistor metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.

• Band IV and V (470-860 MHz) . LOW—Pref@-58dBIMD . 20V —Vcc
• High Gain — 11 dB Typ, Class A @ f = 860 MHz « Gold Metallization for Reliability MAXIMUM RATINGS TPV597 LOW, 470-860 MHz UHF LINEAR POWER TRANSISTOR Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25"C Derate above 25°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD Tj Tstg Value 3.5 1.4 0.11 200 -65to+200 Unit Vdc Vdc Vdc Adc Watts W/°C CASE 244-04, THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RSJC Max 9.0 Unit °C/W

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (Ic = 40 mA, IB = 0) Collector-Base Breakdown Voltage (Ic = 2.0 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 4.0 mA, Ic - 0) Emitter-Base Leakage Current (VEB = 2.0 V) Collector-Emitter Breakdown Voltage (Ic = 40 mA, RBE = 10 £2) Collector Cutoff Current (VCB = 30 V, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO !EBO V(BR)CER ICBO 3.5 0.5 1.2 Vdc Vdc Vdc mA Vdc mAdc ON CHARACTERISTICS DC Current Gain (Ic = 200 mA, VCE = 5.0 V) hFE 120 DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) cob 7.0 pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCE = 20 V, Pout = 1 .0 W, f = 860 MHz, IE = 0.44 A) Load Mismatch (VCE = 20 v, pout = 2.0 w, iE = 0.44 A, f = seo MHZ, Load VSWR = °°:1, All Phase Angles) GPE V 10.5 dB No Degradation in Output Power NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ | Max Unit FUNCTIONAL TESTS (continued) Intermodulation Distortion, 3 Tone (f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref= LOW, Vision Carrier = -8.0 dB, Sound Carrier = -7.0 dB, Sideband Signal = -16 dB, Specification TV05001 ) Cutoff Frequency (VCE = 20 V, IE = 0.44 A) Intermodulation Distortion (IDEM) (f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref = 2.0 W, Vision Carrier = -8.0 dB, Sound Carrier = -10 dB, Sideband Signal = -16 dB) IMD-i fT IMD2 2.2 -60 2.5 -58 -51 dB GHz dB