TPV595A NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line UHF Linear Power Transistor ... designed for driver and output stages in band IV and V TV transposes and transmit- ter amplifiers. The TPV595A uses gold metallized die with diffused emitter ballast resis- tors to enhance reliability, ruggedness and linearity.
- Band IV and V (470-860 MHz)
- 14 W — Pref (a -47 dB IMD
- 25 V — Vcc
- High Gain — 9 dB Typ, Class A, f = 860 MHz
- Push-Pull Package MAXIMUM RATINGS TPV595A
25 V — 470-860 MHz
CASE 395-01, Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation <&•• TC = 7Q°C Derate above 70°C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IG PD TJ Tstg Value 0.4 200 - SO to + 200 Unit Vdc Vdc Vdc Adc Watts W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (Trj = 70°C) Symbol R0JC Max 2.5 Unit °C/W
ELECTRICAL CHARACTERISTICS
Min | Typ j Max Unit Collector-Emitter Breakdown Voltage dc = 60 mA, IB *= 0| Collector-Base Breakdown Voltage Oc - 10 mA, IE = 0) Emitter-Base Breakdown Voltage d£ = 3 mA, lc = 0) Collector-Emitter Breakdown Voltage dc = 10 mA, RBE = 51 fl) Collector Cutoff Current (VCB = 20 V, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO VIBRICER ICBO Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain 500 mA, VCE - 20 VI "FE (continuad) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Inrormat.on furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofeoing to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders Quality Semi-Conductors