TPV593 NJSEMI | Alldatasheet
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Technical content
, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE:
- Gold Metalization
- Emitter Ballasting
- High Gain MAXIMUM RATINGS Ic VCB PDISS Tj TSTG Ojc 1.2 A 45V 17.5W@TC = 25°C -55 °C to +200 °C -55 °C to +200 °C 10°C/W PACKAGE STYLE .280 4L STUD r A r D E F G h J 1.0 ,71 l)[. : i d 7 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS Tc = 25°c SYMBOL BVCEO BVceo BVEBO hFE C0b PG IMD3 TEST CONDITIONS lc = 40 mA lc= 10 mA IE= 10 mA VCE = 5.0 V lc = 250 mA VCB = 28V f= 1.0 MHz Po = 2.0W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25V lc= 410mA f= 860 MHz Po = 2.0 W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25V lc= 410mA f= 860 MHz MINIMUM 4.0 TYPICAL 8.0 MAXIMUM -60 UNITS V V V PF dB dBc Quality Semi-Conductors