TPS813 | DigiCamel IC Datasheet

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TPS813 TOSHIBA | Alldatasheet

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TOSHIBA TPS811,TPS813 TOSHIBA PHOTO IC_ SILICON EPITAXIAL PLANAR TPS811, TPS813 PHOTOELECTRIC SWITCHES Unit in mm COPIERS, PRINTERS, AND FACSIMILES ate. ) ia rl (|): REFERENCE VALUE COMMODITY AND TICKET BENDING MACHINES qi AND TERMINAL EQUIPMENT IN FINANCIAL o Ped én COMPUTER SYSTEMS wen woke HANDY TERMINALS 4 of fF cco F 2082 8 gy oat) £\\ . Sat a en |i The TPS811 and TPS813 represent a Si photo IC of [ ¢ e ain Fy digital output type that integrates a photodiode, als a, ot RII amplifier circuit, and Schmitt trigger circuit into a “lal [Tl 3 a | YE single chip. NIL * £ at tf These devices respond faster than the ts ° ql = 3 phototransistor type. They output a high when light is input. Fi @ Compact side-view epoxy resin package | 3 | e@ High speed response (w2nlo.27 24 : tpLH=2.5y8, tpHL=5.5ys (TYP.) "28 @ High sensitivity : 0.3mW/cm?(MAX.) JEDEC = * Can be directly connected to TTL and CMOS. @ Operates over a wide supply voltage range TOSHIBA 0-3H1 : Voc=4.5~17V Weight : 0.12g (TYP.) e@ Digital output TPS811 .... Open collector TPS813 .... With a pull-up resistor MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING Supply Voltage TPS811 Output Voltage Vo Vv TPS813 Jouspur Garrone tg 0 | Output Current Derating(Ta>25°C) | alg/°C ‘Power Dissipation Derating ° ° (Ta>25°C) APQ/°C —3.33 |mW/°C Storage Temperature Range —40~100 Soldering Temperature Gs) ote) | Ty [260 | 0 | Note 1 : At the location of 1.3mm from the resin package bottom 26100 1EAA2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing. your, designs, please ensure that TOSHIBA. products are, used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1997-09-08 1/5

TOSHIBA TPS811,TPS813 PIN CONNECTION TPS811 TPS813 © 3. Voc =o 3. Voc o 2. OUT =o 2. OUT “tp Ot “bp © 1. GND o 1. GND OPTO-ELECTRICAL CHARACTERISTICS (Ta = - 30~85°C, Vcc = 4.5~17V, Typical values are all at 25°C.) CHARACTERISTIC SYMBOL | TEST CONDITION High Level Supply Current TocH _|E=2mW/em?(Note 2)| — | 12| 3.2] ma | Low Level TPS81i | — | 25] 52 | IccL mA High Level E=2mW/cm? (Note 2) 15 7X Output Current TPS811 | ton | Vo=30V a High Level Output Voltage | TPS813 E=2mW/cm?(Note 2)|0.9Vcc| — | — | v_| Low Level Output Voltage Jop=16ma, E=0 | — | oo7{ o4| v_| “L”—“H” Threshold Radiant E Ta=25°C | — | 01] 03 | Wem’ Incidence mp = = Joe | Relative Output Voltage EqL/ELH| Ta=25°C [ 05 | 065| o9 | — | Peak Sensitivity Wavelength | ap | | — | 900 | — | om | Propagation Ta=25°C | — | 25] 9 | Switching |Delay Time Vec=5V | — | 55] 15 | S Time B=2mW jem? | = | oos| os] “ Fall Time RL=2800 ove 8) |= Toa] 055 | Note 2 : CIE standard light source A (standard tungsten bulb) with color temperature =2856°K. Q61001EAA2" @ The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1997-09-08 2/5

TOSHIBA TPS811,TPS813 Note 3 : Switching time measurement circuit and waveform TPS811 Ip ° ©Vcc Ip ~ Ru tp E ° ©VouT Vv ri CTE. | __\\ Vout Ft 0594, 1 V (INFRARED LED) (TPS811) VoL t TPS813 Ip ° ©Vcc Ip

5 RL pH

E a ° ©VouT

4 N F [a> % a VoH

CT OE ; _N O re) vi | 1.5V (INFRARED LED) (TPS813) ouT Pe vor, He. RECOMMENDED OPERATING CONDITIONS Supply Voltage [ veo [45 | - | ow | v | Output Voltage | vo | 45 | - | wf v | Low Level Output Current | ton | — | — | 36 | ma | PRECAUTIONS 1. When you consider a combined use with an LED, be sure to use an infrared LED. Visible rays in wavelength of less than 700nm cannot be detected. 2. Make sure the shielding plate that is used to detect positions is manufactured from materials with superior light-shielding characteristics. Insufficient shield can cause malfunction. 3. Photo ICs contain a high-sensitivity amplifier. Toshiba recommends connecting a capacitor of about 0.01zF that has good high-frequency characteristics between Voc and GND near the device to prevent unwanted oscillation. 1997-09-08 3/5

TOSHIBA TPS811,TPS813 Po - Ta . Io - Ta 300) 60) PTT TET eT Tey yy] a eee SB yo LETT TT tt tt tt 3 ot titi ttt ttt 2 [TT TIN-T ETT TT - ELEEINEFEETT ET B ot tlLIENItti tt to E wot tET NTT ETT 8s LITTTITNET TTT TT 2 LITT TTALET TTT TI ef JAE 2 POO go [TTT TT TIN TTT TT e LLTTTTPIN TPT af Pee ee BOPP ee = LL_T TTT TTT NET TT = LITT TTT TENT yey g of LETT Ett NT TT 2 ott TPT TTT NTT TY < Pi Tt yy ery yt try yy a LITI TTT tT Titty tt ALL Titi ttt it tt] 2 Litt i ttt ii ty a a eT a a a rT AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) VoL - IoL (TYP.) VoL — Ta (TYP.) a es WY z= ‘ew -= SS

2 Ta=25C 4 2 wore

2) — assy aaeeeeess ESA a | 3 _—— a so rE 2 Pty yyy py ry gs Eee 4 Fs ee ee oe 2 ttt TTT [tty ees a a” [| LE J oot | | TT TT $ oe i Oe a ee es Se Se ee ee Ba 5 Se of » EEEEEES SESE a CSS SS ead LLL a eee 3 0.02) = ood Le = PE EEET TEE ELL g 1 3 5 10 30 «50 100 8 oot LOW LEVEL OUTPUT CURRENT Igy, (mA) “40-200 0-20 40, 60 80100 AMBIENT TEMPERATURE Ta (°C) 1 RELATIVE ELH, EHL — VCC (TYP.) peer] TTT TT Ty 1.2) gf | PEt PT dew TY eo tty Ty ee BE 09 a ett tit tt ty Be ott Tt ttt ty 0.2) Citi ttt tt 0 4 8 12 16 20 SUPPLY VOLTAGE Vcc (V) 1997-09-08 4/5

1,TP: $81 TP. Ta [ voo=sv_| _ ] mai i. . [| 4 f eect sui : i LHL Hit =e ie at 3 = HIBA : 5} ne caeo He at Ss 2 [] Te i “| i TO a 3 A ail Ht VE BLA FH z fret LATI Poh | : SEEEEE a fine ! TI a [| a a eH = =

8 Ret — rE g ——

Product Information

TPS813 specifications and overview.

Summary

PHOTO IC SILICON EPITAXIAL PLANAR

Description

PHOTO IC SILICON EPITAXIAL PLANAR

Source title TPS813 Datasheet(PDF) - Toshiba Semiconductor

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