TPS806 TOSHIBA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

TOSHIBA PHOTO IC_ SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER Unit in mm a PHOTOELECTRIC COUNTER tal POSITION AND ROTATIONAL SPEED SENSOR aathe [aeans 2 athe © —TPS806 is a photo IC integrating photo diode, amplifier circuit | = Se 8 and waveform shaping circuit in 1 chip. 4) lI | e@ Visible light cut resin is used. : Ap=900mm (TYP.) 2202 @ The same external shape as the infrared LED TLN107A, and is a 3-0 0.454015 best suited for combination with TLN107A as a photo “ fh fe ffs i interrupter. © High speed response : tpLH=6y8, tpHL=2/s (TYP.) rors @ When light is received, output becomes low level. () : REFERENCE VALUE MAXIMUM RATINGS (Ta = 25°C) JEDEC = cuaracTemsmc | SrMBoz Sapa Volage TOSHIBA _0-401 ight : 0.19g (TYP.) High Level Output Voltage | Vou | 30 | v_| West: 0u8ecn® Low Level Output Voltage | tor [| 60 | ma | Low Level Output Current °, °, Derating (Ta>25°C) aloL/*C | —0.67 |mA/°C Power Dissipation | Po | 260 | mw | Power Dissipation Derating ° 6 (Ta>25°C) APQ/°C -3.33 |mW/°C Operating Temperature Range —25~85 Storage Temperature Range —40~100 Soldering Temperature (5s) [ ts [260 | °c _| PIN CONNECTION VOL. REG. o 3. Voc = |)9>> ET Lo exo 26100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1997-09-08 1/5

OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C) (Ta =0~70°C, Characteristics with no entry of Ta=25°C in the test conditions. Typical values are all at 25°C.) CHARACTERISTIC SYMBOL | TEST CONDITION Supply Voltage [veo [5 | = | ar] IoL=16mA, Voc=5V Low Level Output Voltage Vou | emwien? 0.07| 04] Vv High Level Output Current Voc=5V, Von=s0v, E=0 | — | — | 100[ ya _| | tow Level [| Iocn | Voc=5V, B=2mw/em? | — | 25] 5 | Supply Current |LowHevel_ | Icon | Voo=s5V, B=2mW / em’ [ — | 25] 5 mA High Level | Iocu | Vcc=5V, B=0 | — [12] 3] “H”—“L” Threshold Radiant E Voc=5V, Ta=25°C | — | 01] 0 | W /cm?| Incidence (Note 1) HL Voc=5V [ — | — | o«f = Histerisis Ratio ELH/Ent| Ta=25°C, Voc=5V [| — [oe|-— | — | Peak Sensitivity Wavelength [ Ap | | = | 900[ — | om | i =i] tpn | T8=25°C, Voo=5V i [Rise time [te | py = 2800 [=| oif-]| “ Time Rise Time tr Ry,=2800 (Note 2) . Fall Time | — Joos] — | Note 1 : Color temperature =2870°K, Standard Tungsten Lamp. Note 2 : Switching time test circuit. Syyoosy VIN “oe [A ° oVOUT vix| 470 } = F fa [=> 5 90% VOH PT TE \\ OUT it Y (GaAs LED) (TPS806) tf [Tt Ob 1997-09-08 2/5

RECOMMENDED OPERATING CONDITIONS Supply Voltage | veo [45 [5 | we] v | High Level Output Voltage | Von | 45 | — | 27 | v_| Radiant Incidence [| = [os | — | — |nw/em Operating Temperature | To | 0 | — | 0 | c_| PRECAUTION Please be careful of the followings. 1. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming. (Soldering portion of lead : above 2mm from the body of the device) . 2. Supply the by-pass condenser up to 0.01uF between Voc and GND near device to stabilize the power supply line. 3. During 100s after turning on Vcc, output voltage changes for stabilizing the inner circuit. 1997-09-08 3/5

¢ Pp — Ta IoL - Ta ed € “TTT Fe e st tir r rT T ry yy yy

2 COCO EE 2 “COPOIN

J ofp TEEN TTT - og» LIITNITT TTT TI ge “Li TT TTNE TTT TTT ae eee g . 3 \\ 2 oP E TT TXT ze op LTT TXT tT TT TY 2 [I] TTPIN TTT gs LITT TTTINI TTT 2 oo - TTI TT IN TTT 3 9 & LLP TTT TT NET TY See 2 oo ttt TT TNE TT 2 ott TTT TTT NTT Ty < 50) < 10} S CEH EEE g g

2 Ay 0 20 40 60 80 100 120 8 on 0 20 40 60 80 100 120

AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) S VoL - IoL (TYP.) VoL - Ta (TYP.)

5 Lome “a 3 eR EEEEEEEEEE

: SSS Sea ES eet oes en 2 li s |{/Liiitt A Bee == SSSSeeee=te= SOU |) & EERE EES 2 oof} 3 ae — pu ere n eeir mee) oot tttttTtt tt tt | 3 ooo : PELE EEE EEE EL 1 3 5 10 30 50 100 8 0.01 LOWLEVEL OUTPUT CURRENT Igy, (mA) -40 -20 0 20 40 60 80 100 5 Icc _ vec (TYP.) AMBIENT TEMPERATURE Ta (°C)

71 PTT tt RELATIVE BLHb PHL ~ VOQuyp

8 — “Cee | [ [TT] I Id 8 | | Peed ee & [roo | ft rel {tt | ott tt Tee | eof | |p wel Pt ET | 2 titi titi tl ° 2) ns =z 0.8] = | | Times] TT TT | oe og | EEE ss | 20e=— on a ee eeee a ,pecn Tere 33 od HEE HECEEEECEO % 4 6 12 16 20 % 4 8 12 16 20 SUPPLY VOLTAGE Vcc (V) SUPPLY VOLTAGE Vcc (V) 1997-09-08 4/5

oT 4 5 rh pe “}—— nn oun ro : LSet neianait : aa

4 SSH ™ Fy

ar] es Co i Le a m0 ce | | | [| 8 [| IH 20 (CE RA’ ae Hee cs ' ~ —~ g rr Dian ONS 38 nue 3 0 RESHOLD RADY RESP 4 3 a [| he co 100 § ° anne: TRAL | I/ \\{ | ae oR C1 eee ) Z a Ly CT E een t FLEH AL | 2 0 ia ma | eg os] LTT TURE “TT [| | | a ae HHH EAE EI “LI =) NT TEI ) [| aan i [| -40 AMBIE! yr) iagagae inne a FEE te sii i Ba CI I CI Cl \\] aitipaail eo HEH LN ve CF inn aon a “| | mn! L | 1000 i rent 14 fo g | | | wal TSC [ i eee 4 | oe “om Bm SE EHH ’ 0 fom ce it wave 2 a = 7 EH : Ee 2 sis ed il 5 |_| i ane a al E =r [| 5 z aera | [ 5 [sis [H] om c = oo rae Se Fa scm a aml * Retsras CHARA (ta=25 OAD Re IVITY 02 « cowsy TAL CTION. P10" ao, BS oe m mua PAR Ser RADIA’ , ue oe SSX ar EES 55 a eres Tee 3 > rena eH 09-0 heii wr ‘ ee TRON . " FEES ° CT LOT Od nivity ont VE SENSI" A RELATT