TPR175 NJSEMI | Alldatasheet
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J.£.ii£,u D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TPR175
175 Watts, 50 Volts, Pulsed
The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25°C2 388 Watts Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature
55 Volts
3.5 Volts
12.5 Amps
- 65to+ 150°C + 200°C CASE OUTLINE 55CX, STYLE 1 ELECTRICAL CHARACTERISTICS (g> 25 °C SYMBOL Pout Pin Pg Tic VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F= 1090MHz Vcc = 50 Volts PW= 10|asec DF= 1% F= 1090MHz MIN 175 8.0 TYP 9.0 MAX 00:1 UNITS Watts Watts dB BVebo BVces "FE Ojc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance le = 5 mA Ic = 20 mA Ic = 20 mA, Vce = 5V 3.5 0.45 Volts Volts °c/w Note 1: At rated output power and pulse conditions 2: At rated pulse conditions NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors