TPR175 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TPR 175
175 Watts, 50 Volts, Pulsed
GENERAL DESCRIPTION CASE OUTLINE The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. 55CX, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 388 Wattso2 Maximum Voltage and Current BVces Collector to Base Voltage 55 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 12.5 Amps Maximum Temperatures Storage Temperature - 65 to + 150 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg h c VSWR Power Out F = 1090 MHz 175 Watts Power Input Vcc = 50 Volts 25 Watts Power Gain 8.0 9.0 dB Collector Efficiency 40 % Load Mismatch Tolerance 00:1 PW = 10 msec DF = 1% F = 1090 MHz BVebo BVces h FE qjc2 Emitter to Base Breakdown Ie = 5 mA 3.5 Volts Collector to Emitter Breakdown Ic = 20 mA 55 Volts DC - Current Gain Ic = 20 mA, Vce = 5V 10 Thermal Resistance 0.45 C/W o Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue A February 1998