1718-32L GHZTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1718-32L
32 Watt - 24 Volts, Class C
The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package. CASE OUTLINE 55KT - STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 117 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 12 A Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR 1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1750-1850 MHz Vcb = 24 Volts Pin = 7 Watts As Above F = 1750 MHz, Pin = 7 W 6.5 7.0 3:1 Watt Watt dB BVces BVebo H FE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Output Capacitance * Thermal Resistance Ic = 20 mA Ie = 15 mA Vce = 5 V, Ic = 500 mA F = 1 MHz, Vcb = 28V 3.5 10 100 1.5 Volts Volts pF C/Wo * Not measureable due to Output Prematch within the package Issue January 1996