TPR1000 GHZTECH | Alldatasheet
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WIT HOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 TPR 1000
1000 Watts, 45 Volts, Pulsed
GENERAL DESCRIPTION CASE OUTLINE The TPR 1000 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input returns for fast rise time. Low thermal resistance package reduces junction temperature, extends life. 55KV, Style 1 Common Base ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 2900 Wattso2 Maximum Voltage and Current BVces Collector to Base Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 80 Amps Maximum Temperatures Storage Temperature - 65 to + 200 C o Operating Junction Temperature + 200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Power Input Vcc = 45 Volts 250 Watts Pg ηc tr VSWR 1 Power Out F = 1090 MHz 1000 Watts Power Gain 6.0 dB Collector Efficiency 43 % Rise Time 70 ns Load Mismatch Tolerance 9:1 PW = 10 µsec DF = 1% F = 1030 MHz Bvebo 3,4 BVces Collector to Emitter Breakdown Ic = 100mA 65 Volts4 hFE θjc2 Emitter to Base Breakdown Ie = 50mA 3.5 Volts DC - Current Gain Ic = 1000mA, Vce = 5 V 10 Thermal Resistance 0.06 C/W o Note 1: At rated output power and pulse conditions 2: At rated pulse conditions 3: Cannot measure due to input return 4: Per Side Issue A June 1997