TPP65R075DFD WUMC | Alldatasheet

Document overview

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Technical content

Features

l Very low FOM RDS(on)×Qg l Easy to use/drive l 100% avalanche tested l RoHS compliant

Applications

l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) l LLC Half-bridge l Charger Device Marking and Package Information Device Package Marking TPB65R075DFD TO-263 65R075DFD TPP65R075DFD TO-220 65R075DFD TPW65R075DFD TO-247 65R075DFD Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 0.075 Ω Qg,typ 81 nC ID 45 A ID,pulse 135 A EOSS @ 400V 10.29 μJ trr 176 ns Qrr 1.4 μC Irrm 16 A 650V Super-junction Power MOSFET TO-220 TO-247 TO-263

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Values Unit Continuous Drain Current TC = 25ºC ID A TC = 100ºC 27 Pulsed Drain Current (note1) ID,pulse 135 A Gate-Source Voltage VGSS ±30V V Single Pulse Avalanche Energy (note2) EAS 180 mJ Repetitive Avalanche Energy (note2) EAR 144 mJ Avalanche Current IAR 6 A MOSFET dv/dt Ruggedness, VDS = 0...650V dv/dt 50 V/ns Power Dissipation For TO-263,TO-220,TO-247 PD 312 W Continuous Diode Forward Current IS 45 A Diode Pulsed Current (note1) IS,pulse 135 Reverse Diode dv/dt (note3) dv/dt 50 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance For TO-263,TO-220,TO-247 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 0.4 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com Electrical Characteristics TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 10 μA VDS = 650V, VGS = 0V, TJ = 150ºC -- -- 5000 Gate-Source Leakage Current IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 22A -- 0.058 0.075 Ω Gate Resistance RG f = 1.0MHz open drain -- 1 -- Ω Dynamic Characteristics Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 4640 -- pFOutput Capacitance Coss -- 123 -- Reverse Transfer Capacitance Crss -- 3.55 -- Total Gate Charge Qg VDD = 400V, ID = 22A, VGS = 10V -- 81 -- nCGate-Source Charge Qgs -- 25 -- Gate-Drain Charge Qgd -- 24 -- Turn-on Delay Time td(on) VDD = 400V, ID = 22A, RG = 25Ω -- 107 -- ns Turn-on Rise Time tr -- 80 -- Turn-off Delay Time td(off) -- 164 -- Turn-off Fall Time tf -- 52 -- Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 22A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time trr VR = 400V, IS=22A, diF/dt = 100A/μs -- 176 -- ns Reverse Recovery Charge Qrr -- 1.4 -- μC Peak Reverse Recovery Current Irrm -- 16 -- A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. ID = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com TO-263 Unit:mm Symbol Min. Nom Max. A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0.00 0.13 0.25 b 0.70 0.81 0.96 b1 1.17 1.27 1.47 c 0.30 0.38 0.53 D1 8.50 8.70 8.90 D4 6.60 - - Unit:mm Symbol Min. Nom Max. E 9.86 10.16 10.36 E5 7.06 - - e 2.54BSC H 14.70 15.10 15.50 H2 1.07 1.27 1.47 L 2.00 2.30 2.60 L1 1.40 1.55 1.70 L4 0.25BSC θ 0° 5° 9°

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com TO-220 Unit:mm Symbol Min. Nom Max. A 4.37 4.57 4.77 A1 1.25 1.30 1.40 A2 2.20 2.40 2.60 b 0.70 0.80 0.95 b2 1.17 1.27 1.47 c 0.45 0.50 0.60 D 15.10 15.60 16.10 D1 8.80 9.10 9.40 D2 5.50 - - Unit:mm Symbol Min. Nom Max. E 9.70 10.00 10.30 E3 7.00 - - e 2.54 BSC e1 5.08 BSC H1 6.25 6.50 6.85 L 12.75 13.50 13.80 L1 - 3.10 3.40 ΦP 3.40 3.60 3.80 Q 2.60 2.80 3.00

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com TO-247

TPB65R075DFD,TPP65R075DFD,TPW65R075DFD Wuxi Unigroup Microelectronics Co.,Ltd V1.0 www.tsinghuaicwx.com Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.