TPM7R10CQ5 TOSHIBA | Alldatasheet

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MOSFETs Silicon N-channel MOS (U-MOS -H) TPM7R10CQ5 Start of commercial production 2025-04 1. Applications

  • High-Efficiency DC-DC Converters
  • Switching Voltage Regulators
  • Motor Drivers 2. Features (1) Fast reverse recovery time : trr = 45 ns (typ.) (2) Small reverse recovery charge : Qrr = 43 nC (typ.) (3) Small gate charge: QSW = 18 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.7 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit SOP Advance(E) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation
  1. Absolute Maximum Ratings (Note) (T a = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature ( Tc = 25 ) ( t = 100 µs ) ( Tc = 25 ) (Note 1), (Note 2) (Note 1), (Note 3) (Note 1) (Note 3) (Note 4) (Note 4) Symbol VDSS VGSS ID ID IDP PD PD EAS IAS Tch Tstg Rating 150 ±20 120 420 250 120 175 -55 to 175 Unit V A A A W W mJ A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This product is not designed for radiation resistance or cosmic ray resistance, and these natural environmental factors may affect reliability. In addition, radiation from the constituent materials of the product also becomes a natural environmental factor, which may affect reliability. 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance ( Tc = 25 ) ( Ta = 25 ) (Note 3) Symbol Rth(ch-c) Rth(ch-a) Max 0.6 Unit Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: This is the maximum rated current when the case temperature is maintained at 25 . The case temperature indicates the entire bottom side. Note 3: Device mounted on a glass-epoxy board, Figure 5.1 Note 4: VDD = 120 V, Tch = 25 (initial), L = 5.3 µH, IAS = 120 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation
  1. Electrical Characteristics 6.1. Static Characteristics (T a = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 5) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±20 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1.2 mA VGS = 8 V, ID = 35 A VGS = 10 V, ID = 35 A Min 150 130 3.1 Typ. 6.2 5.7 Max ±0.1 4.5 8.7 7.1 Unit µA V mΩ Note 5: If a reverse bias is applied between gate and source, this device enters V (BR)DSX mode. Note that the drain- source breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (T a = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss rg tr ton tf toff Test Condition VDS = 75 V, VGS = 0 V, f = 1 MHz See Figure 6.2.1 Min Typ. 4390 870 1.5 Max 6800 2.3 Unit pF Ω ns VDD ≈ 75 V VGS = 0 V/ 10 V ID = 35 A RL = 2.14 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (T a = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Output charge Symbol Qg Qgs1 Qgd QSW Qoss Test Condition VDD ≈ 75 V, VGS = 10 V, ID = 35 A VDD ≈ 75 V, VGS = 8 V, ID = 35 A VDD ≈ 75 V, VGS = 10 V, ID = 35 A VDS = 75 V, VGS = 0 V, f = 1 MHz Min Typ. 8.6 106 Max Unit nC 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

6.4. Source-Drain Characteristics (T a = 25 unless otherwise specified) Characteristics Reverse drain current (pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge (Note 6) (Note 7) (Note 7) Symbol IDRP VDSF trr Qrr Test Condition (t = 100 µs) IDR = 35 A, VGS = 0 V IDR = 35 A, VGS = 0 V, -dIDR/dt = 100 A/µs Min Typ. Max 420 -1.2 Unit A V ns nC Note 6: Ensure that the channel temperature does not exceed 175 . Note 7: Defined by design. 7. Marking Fig. 7.1 Marking 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

  1. Characteristics Curves (Note) Fig. 8.1 ID - V DS Fig. 8.2 ID - V DS Fig. 8.3 ID - V GS Fig. 8.4 RDS(ON) - V GS Fig. 8.5 RDS(ON) - I D Fig. 8.6 IDR - V DS 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

Fig. 8.7 V(BR)DSS - T a Fig. 8.8 Vth - T a Fig. 8.9 RDS(ON) - T a Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 Capacitance - V DS Fig. 8.12 Qoss - V DS 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

Fig. 8.13 rth - t w (Guaranteed Maximum) Fig. 8.14 PD - T c (Guaranteed Maximum) Fig. 8.15 ID - T c Fig. 8.16 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

Unit: mm Weight: 0.124 g (typ.) Package Name(s) TOSHIBA: 2-6L1A Nickname: SOP Advance(E) 2025-03-26 Rev.2.0 ©2024-2025 Toshiba Electronic Devices & Storage Corporation

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