TPM2025 3PEAK | Alldatasheet

Document overview

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Technical content

Features

⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Channels ⚫ 5-V Single Supply with Optimized Output Damping for Gan Reliability ⚫ 7-A Peak Source And 5-A Sink-Drive Current ⚫ 0.69-ns Minimum Input Pulse Width (Typical) ⚫ Low Propagation Delay (2-ns Typical) ⚫ Optimized Pinout for nanosecond-pulse-width ⚫ Fast Rise and Fall Times (0.45 -ns and 0.45 -ns Typical) ⚫ <0.61-ns Typical Delay Matching Between Two Channels ⚫ ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.5-kV CDM ⚫ Available in Flip-Chip QFN2X2-10 Package

Applications

⚫ Laser Distance Measuring System ⚫ Automotive Lidar ⚫ Driver Monitoring System ⚫ GaN DC/DC Conversion System

Description

The TPM2025 / TPM2025Q family are low-side dual- channel ultra -highspeed gate drivers for GaN and logic-level MOSFETs. It is optimized for high -speed applications such as Lidar and high -density power convertors with enhanced low propagation delay design. The TPM2025’s 2 -mm×2-mm flip -chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state -of-the-art narrow pulse width as short as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulses. Typical Application Diagram Figure 1 Typical Application Diagram IN1 IN2 VCC1 VCC2 OUT1L GND1 OUT2H OUT2L TPM2025 OUT1H GND2 VBST VBST

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Table of Contents

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r

Revision History

2021/07/15 Rev. A.0 Initial release 2023/02/28 Rev. A.1 Updated TPM2025Q orderable part number. Updated electrical characteristics on timing footnotes. 2023/07/10 Rev. A.2 Added transient voltage rating 2023/08/07 Rev. A.3 Added ground description and truth table. Block diagram amendment on signal polarity.

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Pin Configuration and Functions QFN2X2-10 Top View IN1 IN2 VCC1 VCC2 OUT1L GND1 OUT2H OUT2L TPM2025 OUT1H GND2 Pin Functions Pin I/O Description No. Name

1 IN1 Input Channel 1 Input, Active High

2 IN2 Input Channel 2 Input, Active High

3 VCC1 Supply Device Supply for Channel 1

4 VCC2 Supply Device Supply for Channel 2

5 GND2 Ground Device Ground for Channel 2

6 OUT2L Output Channel 2 Pull-down Output

7 OUT2H Output Channel 2 Pull-up Output

8 GND1 Ground Device Ground for Channel 1

9 OUT1L Output Channel 1 Pull-down Output

10 OUT1H Output Channel 2 Pull-up Output

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Specifications Absolute Maximum Ratings Parameters Rating Power Supply Voltage, VCC1, VCC2 −0.3 V to 6 V Power Supply Voltage Difference,VCC1 – VCC2 −6 V to 6 V Ground Difference, GND1 – GND2 –0.3V to 0.3V Output Voltage Range OUT1H, OUT1L –0.3V to VCC1+0.3V Output Voltage Range OUT1H, OUT1L, 5-ns Transient –5V to VCC1+5V Output Voltage Range OUT1H, OUT1L, 10-ns Transient –2V to VCC1+2V Output Voltage Range OUT2H, OUT2L –0.3V to VCC2+0.3V Output Voltage Range OUT2H, OUT2L, 5-ns Transient –5V to VCC2+5V Output Voltage Range OUT2H, OUT2L, 10-ns Transient –2V to VCC2+2V Input Voltage Range IN1, IN2 −0.3 V to 6 V Continuous Output Channel Current OUT1H, OUT2H, OUT1L, OUT2L –500 mA to 500 mA Pulsed Output Channel Sourcing Current OUT1H, OUT1H (500 ns) 7 A Pulsed Output Channel Sourcing Current OUT1H, OUT1H (500 ns) 5 A Operating Junction Temperature Range –40 °C to 150 °C Storage Temperature Range –65 °C to 150 °C Lead Temperature (Soldering, 10 sec) 260 °C Note 1 : Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 300 mV beyond the power supply, the input current should be limited to less than 10mA. Note 3: Power dissipation and thermal limits must be observed. ESD, Electrostatic Discharge Protection Symbol Parameter Condition Minimum Level Unit HBM Human Body Model ESD ANSI/ESDA/JEDEC JS-001,per AEC Q100-002 ±6 kV CDM Charged Device Model ESD ANSI/ESDA/JEDEC JS-002, per AEC Q100-011 ±1.5 kV Recommended Operation Conditions Parameters Rating

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Power Supply Voltage, VCC1, VCC2 4.75 V to 5.25 V Power Supply Voltage Difference VCC1 – VCC2, GND1 – GND2 0 V Input Voltage IN1, IN2 0 V to VCC Output Voltage VOUT1H, VOUT1L, VOUT2H, VOUT2L 0 V to VCC Operating Ambient Temperature Range –40 °C to 125 °C Thermal Information Package Type θJA θJC Unit QFN2X2-10 87.54 119.32 °C/W

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r

Electrical Characteristics

All test condition is V CC = 5 V, TJ = −40 °C – 150 °C, 1-μF capacitor between V CC and GND, unless otherwise noted. Symbol Parameter Conditions Min Typ Max Unit IQ VCC Quiescent Current IN1 = H, IN2 = H 105 200 μA IN1 = L, IN2 = L 105 200 IOP VCC Operating Current fSW =30 MHz, no load, ROUTH = 2 Ω, ROUTL= 2 Ω 40 mA fSW =30 MHz, 100-pF load, ROUTH = 2 Ω, ROUTL= 2 Ω 51 mA VUVLO_rising Supply Under Voltage Lock Out rising threshold 4 4.18 4.35 V VUVLO_hys Supply Under Voltage Lock Out falling hysteresis 85 mV TOTP Over temperature shutdown, turn-off 170 °C ΔTOTP Over temperature hysteresis 20 °C VIN_H Input signal high threshold Input high threshold 1.7 2.15 2.6 V VIN_L Input signal low threshold Input low threshold 1.1 1.45 1.8 V VIN_HYS Input hysteresis 0.38 1 V RIN_pulldown Input pull-down resistance 100 150 250 kΩ CIN Input capacitance 1.5 pF VOL Output low voltage. OUTxL I OUTxL = 100 mA, INx = 0 V 36 mV VCCx –VOHx Output high voltage, OUTxH I OUTxH = 100 mA, INx = 5 V 50 mV IOH Output Peak Sourcing Current VOUTxH = 0 V, INx = 5 V 7 A IOL Output Peak Sinking Current VOUTxL = 5 V, INx = 0 V 5 A Tstart Startup Time, VDD rising above UVLO INx = 5 V ,VDD rising above UVLO to OUTH rising 40 78 us Tshut-off ULVO falling INx = 5 V ,VDD falling below UVLO V to OUTH falling 0.7 2.5 3.5 us Tpd, r(1) Propagation delay, turn on INx to OUTH, 100-pF load 2 4 ns Tpd, f(1) Propagation delay, turn off INx to OUTL, 100-pF load 2 4 ns Δtpd Pulse positive distrortion, (tpd, f - tpd, r) 300 610 ps tR Output rise-time 0Ω series 220 pF load 450 ps tF Output fall-time 0Ω series 220 pF load 450 ps tPW Minimum input pulse width that changes output state 0Ω series 220 pF load 0.69 ns (1) Guranteed by design.

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Detailed Description Overview The TPM2025 is a low -side dual-channel ultra-highspeed gate driver for GaN and logic -level MOSFETs. It is optimized for high -speed applications such as Lidar and high -density power convertors with enhanced low propagation delay design. The TPM2025’s 2-mm×2-mm flip-chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state -of-the-art narrow pulse width as low as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulse. Functional Block Diagram Figure 13 Functional Block Diagram Feature Description Supply and Under-Voltage-Lock-Out (UVLO) The device has dual supply inputs that are dedicated for each channel independently , to avoid interferences between channels during operations. The two ground paths for the dual channels are connected via back -to- back diodes. Each channel has its own under -voltage-lock-out (UVLO) monitors. When supply voltage is above its rising threshold, the outputs are functional. When supply voltage is below its falling threshold, the device pulls OUTxL to GND. A short deglitch timer is inserted to avoid oscillations on power supply. Due to ultra-fast turn-on speed, channel output may drain high current on supply nodes within nanoseconds.

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r 3PEAK recommends placing 3 -terminal capacitors close to device supply pins as low as possible. Parasitic inductance may prevent external capacitors from supplying current in such short time, the TPM2025 has built in transient suppressor circuitry to avoid sudden drop which may trigger UVLO and cause output malfunction. TPM2025 provides dual device ground connection with back -to-back diodes to minimize channel -to-channel interference via internal ground connections. 3PEAK recommends connect GND1 and GND2 externally together with low impedance. Channel Input and Output The channel inputs are connected to a low-latency Schmitt trigger. It can cut propagation delay without additional gates. The inputs are pulled low via internal resistors. The TPM2025 provides dual outputs with split pull -up and pull -down paths. The split outputs allow users to independently configure pull-up and pull-down slew-rate via external resistors. The maximum current the output can sink/source is +7 / −5 A. Configuring slew rates may reduce ringing on GaN gate node due to parasitic inductance/capacitance, thus it can improve reliability of GaN transistors. Table 1 Output Truth Table Inputs (INx) OUTxH OUTxL H H High-Impedance L High-Impedance L Floating (Internal Pull Down) High-Impedance L Channel Output in Parallel To achieve higher pull -up current while still maintain short current path, the TPM2025 could support driving highside outputs together, as depicted in below diagram. OUT1L could be left floating in this case. IN1 IN2 VCC1 VCC2 OUT1L GND1 OUT2H OUT2L TPM2025 OUT1H GND2 VBST

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Tape and Reel Information Order Number Package D1 (mm) (mm) (mm) (mm) (mm) (mm) (mm) Pin1 Quadrant TPM2025Q-FC1R-S QFN2X2-10 178 11.1 2.3 2.3 1.0 4 8 Q1 TPM2025-FC1R QFN2X2-10 178 11.1 2.3 2.3 1.0 4 8 Q1

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r Package Outline Dimensions Order Information Order Number Operating Ambient Temperature Range Package Marking Information MSL Transport Media, Quantity TPM2025Q-FC1R-S –40 °C to 125 °C QFN2X2-10 Q25 MSL3 3000 TPM2025-FC1R –40 °C to 125 °C QFN2X2-10 M25 MSL3 3000 Note: Ambient temperature indicates device operation condition range. Application thermal behavior needs to be taken care of when operating in high temperature scenarios.

www.3peak.com Rev.A.2 TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predrive r IMPORTANT NOTICE AND DISCLAIMER Copyright© 3PEAK 2012-2023. All rights reserved. Trademarks. Any of the 思瑞浦 or 3PEAK trade names, trademarks, graphic marks, and domain names contained in this document /material are the property of 3PEAK. You may NOT reproduce, modify, publish, transmit or distribute any Trademark without the prior written consent of 3PEAK. Performance Information. Performance tests or performance range contained in this document/material are either results of design simulation or actual tests conducted under designated testing environment. Any variation in testing environment or simulation environment, including but not limited to testing method, testing process or testing temperature, may affect actual performance of the product. Disclaimer. 3PEAK provides technical and reliability data (including data sheets), design resources (including reference designs), application or other design recommendations, networking tools, security information and other resources "As Is". 3PEAK makes no warranty as to the absence of defects, and makes no warranties of any kind, express or implied, including without limitation, implied warranties as to merchantability, fitness for a particular purpose or non-infringement of any third-party’s intellectual property rights. Unless otherwise specified in writing, products supplied by 3PEAK are not designed to be used in any life-threatening scenarios, including critical medical applications, automotive safety -critical systems, aviation, aerospace, or any sit uations where failure could result in bodily harm, loss of life, or significant property damage. 3PEAK disclaims all liability for any such unauthorized use.