TPCA8103

TPCA8103_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅳ) TPCA8103 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| =45S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D − 40 Drain current Pulsed (Note 1) I DP −120 A Drain power dissipation (Tc=25°C) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current I AR − 40 A Repetitive avalanche energy (Tc=25°C) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 5.0±0.2 0.95±0.05 0.166±0.05 S 0.05 S A 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc=25°C) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V， T ch = 25°C (initial)， L = 100µH， R G = 25 Ω， I AR = − 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ○ on lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) TPCA 8103 Lot No. Type ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −13 ⎯ ⎯ V Gate threshold voltage V th V DS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −20 A ⎯ 5.2 6.8 Drain-source ON resistance R DS (ON) VGS = −10 V, ID = −20 A ⎯ 3.1 4.2 mΩ Forward transfer admittance |Y fs| V DS = −10 V, ID = −20 A 22.5 45 ⎯ S Input capacitance C iss ⎯ 7880 ⎯ Reverse transfer capacitance C rss ⎯ 1340 ⎯ Output capacitance C oss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1450 ⎯ pF Rise time t r ⎯ 15 ⎯ Turn-ON time t on ⎯ 13 ⎯ Fall time t f ⎯ 251 ⎯ Switching time Turn-OFF time t off Duty <= 1%, tw = 10 µs ⎯ 596 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 184 ⎯ Gate-source charge 1 Q gs1 ⎯ 12 ⎯ Gate-drain (“miller”) charge Q gd VDD ∼− −24 V, VGS = −10 V, I D = −40 A ⎯ 58 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ −120 A Forward voltage (diode) V DSF I DR = −40 A, VGS = 0 V ⎯ ⎯ 1.2 V RL = 0.8 Ω VDD ∼− −15 V

0 VVGS

−10 V 4.7 Ω ID = −20A VOUT

ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain-source voltage V DS (V) Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS (V) Drain current I D ( A ) Gate-source voltage V GS (V) Drain current I D ( A ) Drain current I D ( A ) Drain-source ON resistance RDS (ON) ( m Ω) −4 −6 −8 −10 Common source VDS = −10 V Pulse test −40 −60 −80 −100 −20 0 −2 100 Ta = −55°C 0.1 −0.1 −1 −10 −100 100 Common source VDS = −10 V Pulse test Ta = −55°C 100 25 −10 −20 −30 −40 −50 −10 −2.8 −2.6 −2.2 −2.4 VGS = −2 V Common source Ta = 25°C Pulse test −40 −60 −80 −100 −20 0 −0.2 −3.2 −10 −3.1 −3.0 −2.6 VGS = −2.4 V −2.8 Common source Ta = 25°C Pulse test −8 −12 −16 −20 −0.2 −0.3 −0.4 −0.5 −0.1 0 −4 ID = −40 A −10 −20 Common source Ta = 25°C Pulse test −100 0.1 −0.1 −1 −10 100 −10 VGS = −4 V Common source Ta = 25°C Pulse test

RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta Gate threshold voltage V th ( V ) Ambient temperature Ta (°C) Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage V DS ( V ) Drain-source voltage V DS ( V ) Capacitance C (pF) Ambient temperature Ta (°C) Drain-source voltage V DS (V) Total gate charge Q g ( n C ) Drain reverse current I DR ( A ) 100 −0.1 −1 −10 −100 1000 10000 100000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C −1.2 −80 −40 0 40 120 160 80 −0.4 −0.8 −1.6 −2.0 Common source VDS = −10 V ID = −1 mA Pulse test −80 −40 0 40 120 160 80 ID = −40 A, −20 A, −10 A ID = −40 A, −20 A, −10 A VGS = −4 V −10 V Common source Pulse test −0.1 −10 −1000 VGS = 0 V −10 −5 Common source Ta = 25°C Pulse test −100 Dynamic input/output characteristics Gate-source voltage V GS ( V ) −10 −20 −30 0 40 80 120 160 Common source ID = −13 A Ta = 25°C Pulse test VDD = −24 V VDS VGS −30 −20 −10 240 VDD = −24 V −12 −12 200

0.1 10 1 0.1 100 0.001 100 1000 0.01 0.1 1 10 100 1000 (2) (1) (3) 0.1 0 40 80 120 1.5 2.5 160 0.5 (1) (2) 0 40 80 120 160 TRANSIENT THERMAL IMPEDANCE rth (℃/W) CASE TEMPERATURE Tc (°C) PD – Tc DRAIN POWER DISSIPATION PD (W) PULSE WIDTH t w (s) AMBIENT TEMPERATURE Ta (°C) PD – Ta DRAIN POWER DISSIPATION PD (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) T c=25℃ (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s rth – tw SINGLE PULSE DRAIN CURRENT I D ( A ) DRAIN-SOURCE VOLTAGE V DS ( V ) SAFE OPERATING AREA 100 1000 0.1 10 1 ※ SINGLE NONREPETITIVE PULSE Tc= 2 5℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (PULSED) * ID max (CONTINUOUS) * t=1ms VDSS max 0.1 t=10ms 100 DC

• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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