TPCA8102

TPCA8102_06 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅲ) TPCA8102 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) I D − 40 Drain current Pulsed (Note 1) I DP −120 A Drain power dissipation (Tc=25 ℃) P D 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current I AR − 40 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 5.0±0.2 0.95±0.05 0.166±0.05 S 0.05 S A 0.5±0.1 6.0±0.3 1.27 0.4±0.1 5.0±0.2 0.595

0.05 M A

0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 0.6±0.1 3.5±0.2 1 4 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 6 1 2 3 7 5

Characteristics Symbol Max Unit Thermal resistance, channel to case (Tc=25 ℃) Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) Note 1: Ensure that the channel temperature does not exceed 150 ℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: V DD = 24 V,Tch = 25°C (initial),L = 100μH,RG = 25 Ω,IAR = − 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ” c” on the lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the calendar year) TPCA 8102 Lot No. Type

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current I DSS V DS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V − 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V − 15 ⎯ ⎯ V Gate threshold voltage V th V DS = −10 V, ID = − 1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −20 A ⎯ 9.0 14 Drain-source ON resistance R DS (ON) VGS = −10 V, ID = −20 A ⎯ 4.5 6.0 mΩ Forward transfer admittance |Y fs| V DS = −10 V, ID = −20 A 30 60 ⎯ S Input capacitance C iss ⎯ 4600 ⎯ Reverse transfer capacitance C rss ⎯ 850 ⎯ Output capacitance C oss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 980 ⎯ pF Rise time t r ⎯ 10 ⎯ Turn-ON time t on ⎯ 20 ⎯ Fall time t f ⎯ 78 ⎯ Switching time Turn-OFF time t off Duty <= 1%, tw = 10 µs ⎯ 220 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 109 ⎯ Gate-source charge 1 Q gs1 ⎯ 24 ⎯ Gate-drain (“miller”) charge Q gd VDD ∼− −24 V, VGS = 10 V, I D = −40 A ⎯ 25 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I DRP ⎯ ⎯ ⎯ −120 A Forward voltage (diode) V DSF I DR = −40 A, VGS = 0 V ⎯ ⎯ 1.2 V RL = 0.75 Ω VDD ∼− −15 V

0 VVGS

−10 V 4.7 Ω ID = −20A VOUT

Forward transfer admittance ⎪Yfs⎪ (S) Drain-source voltage V DS ( V ) ID – VDS Drain current I D (A) Drain-source voltage V DS ( V ) ID – VDS Drain current I D ( A ) Gate-source voltage V GS (V) ID – VGS Drain current I D ( A ) Gate-source voltage V GS (V) VDS – VGS Drain current I D ( A ) |Yfs| – ID Drain current I D ( A ) Drain-source ON resistance RDS (ON) ( m Ω) RDS (ON) – ID Drain-source voltage V DS (V) −0.8 −1.2 −1.6 −2 −40 −60 −80 −100 −20 0 −0.4 −8 −12 −16 −20 −0.4 −0.6 −0.8 −1.0 −0.2 0 −4 1 10 100 100 1 10 100 1000 −10 −20 −30 −40 −50 −2 −3 −4 -40 -60 -80 -100 -20 0 −1 ID = −40 A −10 −20 Common source Ta = 25°C Pulse test 1000 100 −4.5 VGS = −2.4V −3.6 −2.8 −3.8 −2.6 −4−10 Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test −6 −2.6 −2.8 −3.2 VGS = −2.4 V −3.4 −3.6 −3.8 −4.5 −10 VGS = −4 V Common source Ta = 25°C Pulse test Ta = −55°C 100 Common source VDS = −10 V Pulse test Ta = −55°C 100 25 Common source VDS = −10 V Pulse test

Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage V DS ( V ) IDR – VDS Drain reverse current I DR ( A ) Ambient temperature Ta (°C) Vth – Ta Gate threshold voltage V th ( V ) −1.5 −80 −40 0 40 120 160 80 −0.5 −1.0 −2.0 −2.5 0 −80 −40 0 40 120 160 80 100 0.2 0.4 0.6 0.8 1 ID = −40 A VGS = −4 VCommon source Pulse test −10 V −20 VGS = −10 V Common source VDS = −10 V ID = −1 mA Pulse test Drain-source voltage V DS ( V ) Capacitance – VDS Capacitance C (pF) −0.1 −1 −10 −100 100 1000 10000 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain-source voltage V DS (V) Gate-source voltage V GS (V) Total gate charge Q g ( n C ) Dynamic input/output characteristics −10 −20 −30 0 40 80 120 160 −30 −20 200 −10 Common source ID = −40 A Ta = 25°C Pulse test VDD = −24 V VDS VGS −12 Common source Ta = 25°C Pulse test VGS = 0 V −1 −10 −5 −3

0.001 100 1000 0.01 0.1 1 10 100 1000 0.1 0 50 100 150 1.5 2.5 200 0.5 CASE TEMPERATURE Tc (°C) PD – Tc DRAIN POWER DISSIPATION PD (W) 0 50 100 150 200 rth – tw PULSE WIDTH t w ( s ) TRANSIENT THERMAL IMPEDANCE rth (℃/W) AMBIENT TEMPERATURE Ta (°C) PD – Ta DRAIN POWER DISSIPATION PD (W) SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS ( V ) −10 −100 −1000 −0.1 −10 −1 −0.1 −100 DRAIN CURRENT I D ( A ) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) ｔ＝10s (1) (2) * SINGLE NONREPETITIVE PULSE Tc = 2 5℃ CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (continuous) 1ms ID max (pulsed) * DC OPEATION TC = 25°C 10ms VDSS max (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ (3) (2) (1) SINGLE PULSE

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