TPA NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TPA SERIES Application : TPA series solid state Arrestor is oplicationed to prefect overvoltage Telecommunication equipment and other etec-tric ericuits. Electrical Parameter:Limit Value Symbol IPP Itsm TSTG TJ Ti Dvdt Parameter Impulse current Surge current.half-period wave pertime 50HZ storage temperature Junction temperature Maximum lead bonding temperature on state voltage critical rising rate Testcondition 10/IOOOus 8/20Uus 220V/us 10s 67%VBR Value 100 -40-150 150 230 Unit A A A C C C KV/us Electrical Parameter (Ta = 25°C) Part Number TPA62 TPA100 TPA180 TPA200 TPA220 TPA240 TPA270 off-state current IRM Max uA VRM V 162 180 198 216 243 breakdown voltage VBR Min V 100 180 200 220 240 270 IR MA beadover voltage VBO Max V 133 240 267 293 320 360 IBO Min MA 300 300 300 300 300 300 300 On State voltage VT Max V IT A Hold Current IH Min MA 120 120 120 120 120 120 120 Capacity CSOVIMHZ Max Pf 100 100 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
- 40 -SO ;Tirofc: 20 40 60 80 100 120 Figure S. Relative variation of breakover Figure 6. Relative variation of leakage voltage versus junction current versus reverse voltage temperature applied (typical value*) T|fC) -40 X ZI106080100 2000 1000
Figure 7. Variation of thermal impedance Figure 8. Relative variation of junction