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Technical content
Features
Ultra-Low Supply Current: 390 nA Comparator with Reference Internal 1.248V ± 1.8% Reference @ VDD =5V Fast Response Time: 13 μs Propagation Delay, with 100 mV Overdrive Internal Hysteresis for Clean Switching Offset Voltage: ± 2.0 mV Maximum Offset Voltage Temperature Drift: 0.3 μV/°C Input Bias Current: 6 pA Typical Input Common-Mode Range Extends 200 mV Push-Pull Output with ±25 mA Drive Capability Open-Drain Output Version Available: TP2025 No Phase Reversal for Overdriven Inputs Low Supply Voltage: 1.8V to 5.5V Green, Space-Saving SC70/SOT23 Package
Applications
Battery Monitoring / Management Alarm and Monitoring Circuits Threshold Detectors/Discriminators Sensing at Ground or Supply Line Oscillators and RC Timers Mobile Communications and Notebooks Ultra-Low-Power Systems
Description
The TP2021 has a push-pull output stage with loads up to 25mA. The TP2025 has an open-drain output stage that makes it suitable for mixed-voltage system design. Both feature an on-chip 1.248V ±1.8% reference and draw an ultra-low supply current of only 440nA (max). The TP202x incorporate 3PEAK’s proprietary and patented design techniques to achieve the best world-class performance among all nano-power comparators. Both have 13μs fast response time under 1.8V to 5.5V supply. The internal input hysteresis eliminates output switching due to internal input noise voltage, reducing current draw. They have input common-mode range 200mV beyond the supply rails, and operate down to +1.8V. The integrated 1.248V voltage reference offers low 120ppm/°C drift, is stable with up to 10nF capacitive load, and can provide up to 25mA of output current. These features make the TP202x ideal for all 2-Cell Battery Monitoring/Management. The TP202x is available in the tiny SC70/SOT23 package for space-conservative designs. Both versions are specified for the temperature range of –40°C to +85°C. 3PEAK and the 3PEAK logo are registered trademarks of 3PEAK INCORPORATED. All other trademarks are the property of their respective owners. Battery TP2021 NOTE: (1) Use RPU with the TP2025 Ref Rsense Load RPU (1) VBattery TP2021 in Low-Side Current Sensing
Related Products
Fast 68ns, 1.8V Low Power (46µ A), Internal Hysteresis, ±3mV Maximum VOS, – 0.2V to VDD + 0.2V RRI, Push- Pull (CMOS/TTL) Output Comparators TP1941/TP1941N /TP1942/TP1944 Fast 68ns, 1.8V Low Power (46µ A), Internal Hysteresis, ±3mV Maximum VOS, – 0.2V to VDD + 0.2V RRI, Open- Drain Output Comparators TP1945/TP1945N /TP1946/TP1948 950ns, 3µ A, 1.8V, ±2.5mV VOS-MAX, – 0.2V to VDD + 0.2V RRI, Internal Hysteresis, Push-Pull Output Comparators TP1931 /TP1932/TP1934 950ns, 3µ A, 1.8V, ±2.5mV VOS-MAX, – 0.2V to VDD + 0.2V RRI, Internal Hysteresis, Open-Drain Comparators TP1935 /TP1936/TP1938 Ultra-low 200nA, 13µ s, 1.6V, ±2mV Maximum VOS, Internal Hysteresis, – 0.2V to VDD + 0.2V RRI, Push-Pull (CMOS/TTL) Output Comparators TP2011 /TP2012/TP2014 Ultra-low 200nA, 13µ s, 1.6V, ±2mV Maximum VOS, Internal Hysteresis, – 0.2V to VDD + 0.2V RRI, Open- Drain Output Comparators TP2015 /TP2016/TP2018 DEVICE DESCRIPTION
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n Pin Configuration (Top View) Order Information Model Name Order Number Package Transport Media, Quantity Marking Information TP2021 TP2021-TR 6-Pin SOT23 Tape and Reel, 3000 C2TYW (1) TP2021-CR 6-Pin SC70 Tape and Reel, 3000 C2CYW (1) TP2021-SR 8-Pin SOIC Tape and Reel, 4000 2021S TP2021U TP2021U-TR 5-Pin SOT23 T ape and Reel, 3000 C2UYW (1) TP2021U-SR 8-Pin SOIC Tape and Reel, 4000 2021US TP2021U2 TP2021U2-TR 6-Pin SOT23 Tape and Reel, 3000 C2VYW (1) TP2025 TP2025-TR 6-Pin SOT23 Tape and Reel, 3000 CT2YW (1) TP2025-CR 6-Pin SOT23 Tape and Reel, 3000 CC2YW (1) TP2025-SR 8-Pin SOIC Tape and Reel, 4000 2025S TP2025U TP2025U-TR 5-Pin SOT23 T ape and Reel, 3000 CU2YW (1) TP2025U-SR 8-Pin SOIC Tape and Reel, 4000 2025US TP2025U2 TP2025U2-TR 6-Pin SOT23 Tape and Reel, 3000 CV2YW (1) Note (1): ‘YW’ is date coding scheme. 'Y' stands for calendar year, and 'W' stands for single workweek coding scheme.
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n Absolute Maximum Ratings Note 1 Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 500mV beyond the power supply, the input current should be limited to less than 10mA. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum. This depends on the power supply voltage and how many amplifiers are shorted. Ther mal resistance varies with the amount of PC board metal connected to the package. The specified values are for short traces connected to the leads. ESD, Electrostatic Discharge Protection Symbol Parameter Condition Minimum Level Unit HBM Human Body Model ESD ANS I/ESDA/JEDEC JS-001 2 kV CDM Charged Device Model ESD ANSI/ESDA/JEDEC JS-002 1 kV
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n
Electrical Characteristics
The ● denotes the specifications which apply o ver the full operating temperature rang e, otherwise specifications are at T A = 27°C. VDD = +1.8V to +5.5V, VIN+ = VDD, VIN- = 1.2V, RPU=10kΩ, CL =15pF. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VDD Supply Voltage ● 1.8 5.5 V VOS Input Offset Voltage Note 1 V CM = 1.2V -2.0 0.5 +2.0 mV VOS TC Input Offset Voltage Drift Note 1 V CM = 1.2V 0.3 μV/°C VHYST Input Hysteresis Voltage Note 1 V CM = 1.2V 3 4 7 mV VHYST TC Input Hysteresis Voltage Drift Note 1 V CM = 1.2V 20 μV/°C IB Input Bias Current V CM = 1.2V 6 pA IOS Input Offset Current V CM = 1.2V 4 pA RIN Input Resistance > 100 G Ω CIN Input Capacitance Differential Common Mode 2 4 pF CMRR Common Mode Rejection Ratio V CM = VSS to VDD 50 82 dB VCM Common-mode Input Voltage Range ● V – V + V PSRR Power Supply Rejection Ratio 60 90 dB VOH High-Level Output Voltage I OUT=-1mA ● VDD-0.3 V VOL Low-Level Output Voltage I OUT=1mA ● V SS+0.3 V ISC Output Short-Circuit Current Sink or source current 25 mA IQ Quiescent Current per Comparator ● 390 440 nA VOUT Reference Voltage VDD = 5V 1.225 1.248 1.272 V VDD = 3V 1.202 1.224 1.246 V VOUT TC Reference Voltage Drift 150 μV/°C VOUT LC Reference Voltage Load Regulation 0μA≤Isource≤400μA 1.45 μV/μA 0μA≤Isink≤400μA 0.13 μV/μA tR Rising Time Note 2 5 ns tF Falling Time 5 ns tPD+ Propagation Delay (Low-to-High) Overdrive=100mV, VIN- =1.2V 13 19 μs tPD- Propagation Delay (High-to-Low) Overdrive=100mV, V IN- =1.2V 14 18 μs TPD-SKEW Propagation Delay Skew Note 3 Overdrive=100mV, V IN- =1.2V 1 5 μs Note 1: The input offset voltage is the average of the input-referred trip points. The input hysteresis is the difference between the input-referred trip points. Note 2: For TP2025/TP2025U, tR dependent on RPU and CL-. Note 3: Propagation Delay Skew is defined as: tPD-SKEW = tPD+ - tPD-.
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics Input Offset Voltage vs. Temperature -2.5 2.5 -50 -25 0 25 50 75 100 TEMPERATURE (℃) Input Offset Voltage (mV) 1.8V VCM=1.2V Input Hysteresis Voltage vs. Temperature -50 -25 0 25 50 75 100 TEMPERATURE (℃) Input Hysteresis Voltage (mV) 1.8V VCM=1.2V Quiescent Current vs. Temperature 200 400 600 800 1000 -50 -25 0 25 50 75 100 TEMPERATURE (℃) Quiescent Current (nA) VCM=1.2V 1.8V Propagation Delay vs. Temperature -50 0 50 100 TEMPERATURE (℃) Propagation Delay (μs) tpd-@VDD=5V tpd+@VDD=5V tpd-@VDD=1.8V VCM=1.2V tpd+@VDD=1.8V Propagation Delay Skew vs. Temperature -50 0 50 100 TEMPERATURE (℃) Propagation Delay Skew (μs) 1.8VVCM=1.2V Reference Voltage vs. Temperature 1.2 1.22 1.24 1.26 1.28 1.3 -50 -25 0 25 50 75 100 TEMPERATURE (℃) Reference Voltage (V) 1.8V
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics Propagation Delay vs. Overdrive Voltage 100 10 100 1V Common Mode Voltage (mV) Propagation Delay (μs) VDD=5V VCM=2.5V tpd+ tpd- Propagation Delay Skew vs. Overdrive Voltage -20 -15 -10 10 100 1V Common Mode Voltage (mV) Propagation Delay Skew (μs) VDD=5V VCM=2.5V Propagation Delay vs. Overdrive Voltage 100 10 100 1V Common Mode Voltage (mV) Propagation Delay (μs) VDD=1.8V VCM=0.9V tpd+ tpd- Propagation Delay Skew vs. Overdrive Voltage -20 -15 -10 10 100 1V Common Mode Voltage (mV) Propagation Delay Skew (μs) VDD=1.8V VCM=0.9V Input Offset Voltage vs. Common Mode Voltage -2.5 2.5 012345 Common Mode Voltage (V) Input Offset Voltage (mV)VDD=5V Input Offset Voltage vs. Common Mode Voltage -2.5 2.5 00 . 5 11 . 52 Common Mode Voltage (V) Input Offset Voltage (mV)VDD=1.8V
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics Input Hysteresis Voltage vs. Common Mode Voltage 012345 Common Mode Voltage (V) Inpur Hysteresis Voltage (mV)VDD=5V Input Hysteresis Voltage vs. Common Mode Voltage 0 0.5 1 1.5 2 Common Mode Voltage (V) Input Hysteresis Voltage (mV)VDD=1.8V Quiescent Current vs. Common Mode Voltage 200 400 600 800 1000 012345 Common Mode Voltage (V) Quiescent Current (nA) VDD=5V Quiescent Current vs. Common Mode Voltage 200 400 600 800 1000 0 0.5 1 1.5 2 Common Mode Voltage (V) Quiescent Current (nA) VDD=1.8V Propagation Delay vs. Common Mode Voltage 012345 Common Mode Voltage (V) Propagation Delay (μs) VDD=5V tpd+ tpd- Propagation Delay vs. Common Mode Voltage 0 0.5 1 1.5 2 Common Mode Voltage (V) Propagation Delay (μs) VDD=1.8V tpd+ tpd-
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics Propagation Delay Skew vs. Common Mode Voltage -2.5 2.5 012345 Common Mode Voltage (V) Propagation Delay Skew (μs)VDD=5V Propagation Delay Skew vs. Common Mode Voltage -2.5 2.5 00 . 5 11 . 52 Common Mode Voltage (V) Propagation Delay Skew (μs)VDD=1.8V Input Offset Voltage Distribution 10% 20% 30% 40% 50% 60% -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Input Offset Voltage (mV) Percentage of Occurences
1462 Samples
VDD=5V VCM=1.2V Input Hysteresis Voltage Distribution 10% 20% 30% 40% 50% 60% 0123456789 1 0 1 1 1 2 Input Hysteresis Voltage (mV) Percentage of Occurences VDD=5V VCM=1.2V Quiescent Current Distribution 10% 15% 20% 25% 30% 35% 350 370 390 410 430 450 470 Quiscent Current (nA) Percentage of Occurences VDD=5V VCM=1.2V Low to High Propagation Delay Distribution 10% 20% 30% 40% 50% 60% 70% 12 14 16 18 20 22 24 Propagation Low to High Delay (μs) Percentage of Occurences VDD=5V VCM=1.2V 100mV overdrive
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics High to Low Propagation Delay Distribution 10% 15% 20% 25% 30% 35% 40% 45% 10 12 14 16 18 20 22 Propagation High to Low Delay (μs) Percentage of Occurences VDD=5V VCM=1.2V 100mV overdrive Propagation Delay Skew Distribution 10% 15% 20% 25% 30% 35% 40% 45% 50% - 2 02468 1 0 Propagation Delay Skew (μs) Percentage of Occurences VDD=5V VCM=1.2V 100mV overdrive Reference Voltage Distribution 10% 15% 20% 25% 30% 35% 40% 45% 50% Reference Voltage (mV) Percentage of Occurences VDD=5V Reference Voltage vs. Supply Voltage 1.2 1.22 1.24 1.26 1.28 1.3 12345 Supply Voltage (V) Reference Voltage (V) RREFLOA D=100kΩ Isinking Isourcing Reference Voltage vs. Reference Load Current 1.2 1.22 1.24 1.26 1.28 1.3 0 100 200 300 400 Reference Load Current, Sourcing (μA) Reference Voltage (V) VDD=5V Isinking Isourcing Reference Voltage vs. Reference Load Current 1.22 1.225 1.23 1.235 1.24 01 0 2 0 3 0 Reference Load Current, Sourcing (μA) Reference Voltage (V) VDD=1.8V Isourcing Isinking
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n Typical Performance Characteristics Output Voltage Headroom vs. Output Load Current 05 1 0 1 5 Output Load Current (mA) Output Voltage (V) VDD=5V Sourcing Current Sinking Current Output Voltage Headroom vs. Output Load Current 0.5 1.5 Output Load Current (mA) Output Voltage (V) VDD=1.8V Sourcing Current Sinking Current Output Voltage Headroom vs. Supply Voltage 100 200 300 400 12345 Supply Voltage (V) Output Voltage (mV) IOUT=±1mA VOH VOL Output Short Current vs. Supply Voltage 12345 Supply Voltage (V) Short Current (mA) Isinking Isourcing
calculating Vtf is slight difference with TP2021/TP2021U, so does the hysteresis voltage Vhyst. voltage (VDD), as shown in Figure 5. Figure 5. Inverting Configuration with Hysteresis is less than V+, the output voltage is high. The three network resistors can be represented as R1 ||R3 in series with R2.
calculating Vtr is slight difference with TP2021/TP2021U, so does the hysteresis voltage Vhyst. minimize PCB Surface Leakage. S ee below section on “PCB Surface Leakage” for more details. PCB layout and route the comparator’s -IN and +IN signal under the PCB surface.
- For Non-Inverting Configuration:
a) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface.
- For Inverting Configuration:
the comparator (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. Figure 6. Example Guard Ring Layout for Inverting Comparator inputs can go 300mV beyond either rail, the comparator can easily perform ‘true ground’ sensing.
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n The maximum output current is a function of total supply voltage. As the supply voltage of the comparator increases, the output current capa bility also increases. Attention must be paid to keep the junction temperature of the IC below 150°C when the output is in conti nuous short-circuit condition. The output of the amplifier has reverse-biased ESD diodes connected to each supply. The output should not be force d more than 0.5V beyond either supply, otherwise current will flow through these diodes. ESD The TP202x family has reverse-biased ESD protection diodes on a ll inputs and output. Input and output pins can not be biased more than 300mV beyond either supply rail. Power Supply Layout and Bypass The TP202x family’s power supply pin should have a local bypass capacitor (i.e., 0.01μF to 0.1μF) within 2mm for good high frequency performance. It can also use a bulk capacitor (i.e., 1μF or larger) within 100mm to provide large, slow currents. This bulk capacitor can be shared with other analog parts. Good ground layout improves performance by decreasing the amoun t of stray capacitance and noise at the comparator’s inputs and outputs. To decrease stray capacitance, minimize PCB lengths and resistor leads, and place external components as close to the comparator’ pins as possible. Proper Board Layout The TP202x family is a series of fast-switching, high-speed comparator and requires high-speed layout considerations. For best results, the following layout guidelines should be followed: 1. Use a printed circuit board (PCB) with a good, unbroken low-inductance ground plane. 2. Place a decoupling capacitor (0.1μF ceramic, surface-mount capacitor) as close as possible to supply. 3. On the inputs and the output, keep lead lengths as short as possible to avoid unwanted parasitic feedback around the comparator. Keep inputs away from the output. 4. Solder the device directly to the PCB rather than using a socket. 5. For slow-moving input signals, take care to prevent parasiti c feedback. A small capacitor (1000 pF or less) placed between the inputs can help eliminate oscillations in th e transition region. This capacitor causes some degradation to propagation delay when the impedance is low. The topside ground plane should be placed between the output and inputs. 6. The ground pin ground trace should run under the device up to the bypass capacitor, thus shielding the inputs from the outputs.
provides additional hysteresis for noise immunity. Figure 7. IR Receiver
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n Package Outline Dimensions SC-70-5 / SC-70-6 (SOT353 / SOT363) Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 C 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8°
SC70, 1.8V, Nano-power Comparators with Voltage Reference w w w . 3 p e a k i c . c o m . c n Package Outline Dimensions SOT23-5 / SOT23-6 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.400 0.012 0.016 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L1 0.300 0.460 0.012 0.024 θ 0° 8° 0° 8°
SC70, 1.8V, Nano-power Comparators with Voltage Reference R E V 1 . 3 w w w . 3 p e a k i c . c o m . c n D b E e θ C Package Outline Dimensions SO-8 (SOIC-8) Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 C 0.190 0.250 0.007 0.010 D 4.780 5.000 0.188 0.197 E 3.800 4.000 0.150 0.157 E1 5.800 6.300 0.228 0.248 e 1.270TYP 0.050TYP L1 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°