TND332ST

TND332ST SANYO | Alldatasheet

Document overview

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Technical content

Features

• Three phase buffer.
• Monolithic structure (High voltage CMOS process adopted).
• Withstand voltage of 25V is assured.
• Wide range of operating voltage: 4.5V to 25V .
• Peak output current: 1A.
• Fast switching time.
• Fully compatible input to TTL / CMOS (V IH=up to 3.0V , at VDD=4.5 to 25V).
• Built-in input pull-down resistance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage V DD 0 to 25 V Input Voltage V IN GND- -0.3 to VDD+0.3 V Allowable Power Dissipation P D max 0.3 W Junction Temperature Tj - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Recommend Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Operaing Supply Voltage V DD 4.5 to 25 V Operaing Temperature Topr - -40 to +125 °C 51309IP MS IM TC-00001947 SANYO Semiconductors DATA SHEET TND332ST ExPD(Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications www.semiconductor-sanyo.com/network

No. A1466-2/5 AC Characteristics at Ta=25°C, VDD18V , VIN=5V Parameter Symbol Conditions Ratings Unit min typ max Turn-ON Rise Time t r CL=1000pF 30 45 ns Turn-OFF Fall Time t f CL=1000pF 30 45 ns Delay Time tD1C L=1000pF 30 45 ns tD2C L=1000pF 45 60 ns DC Characteristics at Ta=25°C, VDD=4.5 to 25V Parameter Symbol Conditions Ratings Unit min typ max Logic “1” Input Voltage V IH 3.0 V Logic “0” Input Voltage V IL 0.8 V Logic “1” Input Bias Current I IN VIN=VDD=25V 40 100 μA Logic “0” Input Bias Current I IN-V IN=0V or VDD -1 1 μA High-level Output Voltage V OH IO=0A V DD-0.1 V Low-level Output Voltage V OL IO=0A 0.1 V VDD Supply Current Isupp VDD=10V, VIN=3V (all inputs) 1.0 4.5 mA VDD=10V, VIN=0V (all inputs) 0.2 mA Output High Short Circuit Pulsed Current I O VDD=18V, PW≤10μs, VOUT=0V 1.0 A Output Low Short Circuit Pulsed Current I O-V DD=18V, PW≤10μs, VOUT=18V 1.0 A Output On Resistance ROUT VDD=18V, Iload=10mA, VOUT=“H” 8 12 Ω VDD=18V, Iload=10mA, VOUT=“L” 6 10 Ω Package Dimensions unit : mm (typ) 7005A-014 1 : GND 2 : IN A 3 : IN B 4 : IN C 5 : OUT C 6 : OUT B 7 : OUT A 8 : VDD SANYO : SOP8

1.8 MAX

4.4 6.0 0.80.8 5.0 0.2 0.1 0.3 0.431.27 0.7 1.5

No. A1466-3/5 Block Diagram Switching Time Test Circuit VDD IN OUT GND 90% INPUTINPUT RISE AND FALL TIMES=5ns NONINVERTING OUTPUT 90%90% 10%10% 10% +5V +0.4V +18V 0.1μF OUTPUT A 1000pF 1000pF OUTPUT C INPUT A INPUT C 4.7μF tr tf tD1 tD2 VDD=18V TND332ST OUTPUT B 1000pF INPUT B IT05628 VDD=18V VIN=5V CL=1000pF --50 0 50 100 150 tr -- Tc Turn-On Rise Time, tr -- ns Case Temperature, Tc -- °C 0 5 10 15 20 25 30 IT05629Supply V oltage, VDD -- V Turn-On Rise Time, tr -- ns VIN=5V CL=1000pF tr -- VDD

No. A1466-4/5 0.4 0.6 0.8 1.0 1.2 1.4 --50 0 50 100 150 IT05637 VDD=18V 0.4 0.6 0.8 1.0 1.2 1.4 --50 0 50 100 150 IT05636 VDD=18V IO(+) -- Tc I O(--) -- Tc Output "High" Short Circuit Pulse Current, IO(+) -- A Output "Low" Short Circuit Pulse Current, IO(--) -- A Case Temperature, Tc -- °C Case Temperature, Tc -- °C 100 --50 0 50 100 150 IT05634 VDD=18V VIN=5V CL=1000pF tD2 -- Tc Delay Time, tD2 -- ns Case Temperature, Tc -- °C 0 5 10 15 20 25 30 IT05633 VIN=5V CL=1000pF tD1 -- VDD Delay Time, tD1 -- ns Supply V oltage, VDD -- V tD2 -- VDD Delay Time, tD2 -- ns Supply V oltage, VDD -- V 100 120 160 140 0 5 10 15 20 25 30 IT08459 VIN=5V CL=1000pF --50 0 50 100 150 IT05632 VDD=18V VIN=5V CL=1000pF tD1 -- Tc Delay Time, tD1 -- ns Case Temperature, Tc -- °C 0 5 10 15 20 25 30 IT05631 VIN=5V CL=1000pF tf -- VDD Turn-Off Fall Time, tf -- ns Supply V oltage, VDD -- V --50 0 50 100 150 IT05630 VDD=18V VIN=5V CL=1000pF tf -- Tc Turn-Off Fall Time, tf -- ns Case Temperature, Tc -- °C

No. A1466-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of May, 2009. Specifi cations and information herein are subject to change without notice. 00 20 40 60 80 100 120 140 160 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 IT03760 PD -- Ta Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Output "High / Low" Short Circuit Pulse Current, IO(±) -- A IO(±) -- VDD Supply V oltage, VDD -- V 0.5 1.0 1.5 2.5 2.0 0 5 10 15 20 25 30 IT11084 VIN=5V CL=10μF