TND322VD SANYO | Alldatasheet

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Technical content

Features

  • Dual buffer.
  • Monolithic structure (High voltage CMOS process adopted).
  • W ithstand voltage of 25V is assured.
  • W ide range of operating voltage : 4.5V to 25V .
  • Peak output current : IO +/IO --=0.8A /1A.
  • Fast switching time (30ns typical at 1000pF load).
  • Fully compatible input to TTL / CMOS (VIH=up to 2.6V , at VDD =4.5 to 25V).
  • Built-in input pull-down resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage V DD 0 to 25 V Input Voltage V IN GND- -0.3 to VDD +0.3 V Allowable Power Dissipation P D max 0.2 W Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Recommended Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage V DD 4.5 to 25 V Operating Temperature Topr --40 to +125 °C Marking : DD SANYO Semiconductors DATA SHEET 42507IP TI IM TC-00000673 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TND322VD ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications

No. A0520-2/5 Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD =18V , VIN=5V RatingsParameter Symbol Conditions min typ max Unit Turn-On Rise Time t r C L=1000pF 35 50 ns Turn-Off Fall Time t f C L=1000pF 30 45 ns Delay Time tD 1C L=1000pF 30 45 ns tD 2C L=1000pF 45 60 ns Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD =4.5 to 25V RatingsParameter Symbol Conditions min typ max Unit Logic “1” Input Voltage V IH 2.6 V Logic “0” Input Voltage V IL 0.8 V Logic “1” Input Bias Current I IN+V IN=V DD =25V 40 100 µA Logic “0” Input Bias Current I IN-- V IN=0V - -1 1 µA High Level Output Voltage V OH IO =0A V DD -- 0 . 1 V Low Level Output Voltage V OL IO =0A 0.1 V VDD Supply Current Isupp VDD =10V, VIN=3V, (both inputs) 1.0 4.5 mA VDD =10V, VIN=0V, (both inputs) 0.2 mA Output High Short Circuit Pulse Current IO +V DD =18V, PW≤10µs, VOUT =0V 0.8 A Output Low Short Circuit Pulse Current IO -- V DD =18V, PW≤10µs, VOUT =18V 1.0 A Output On Resistance ROUT VDD =18V, Iload=10mA, VOUT =“H” 11 16.5 Ω VDD =18V, Iload=10mA, VOUT =“L” 6 10 Ω Package Dimensions unit : mm (typ) 7012-006 Block Diagram 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : INA 2 : OUTA 3 : OUTB 4 : INB 5 : GND 6 : VDD 7 : VDD 8 : VDD SANYO : VEC8 VDD IN OUT GND

No. A0520-3/5 Switching Time Test Circuit 90% INPUTINPUT RISE AND FALL TIMES=5ns NONINVERTING OUTPUT 90%90% 10%10% 10% +5V +0.4V +18V 0.1µF OUTPUT A 1000pF 1000pF OUTPUT B INPUT A INPUT B 4.7µF tr tf tD 1 tD 2 VDD =18V TND322VD --50 0 50 100 150 IT05640 V DD =18V V IN=5V C L=1000pF tr -- Tc t f -- Tc Turn-On Rise Time, tr -- ns Case Temperature, Tc -- °C Turn-Off Fall Time, tf -- ns Case Temperature, Tc -- °C 100 --50 0 50 100 150 IT05644 V DD =18V V IN=5V C L=1000pF tD 2 -- Tc Delay Time, tD 2 -- ns Case Temperature, Tc -- °C IT10418 V DD =18V V IN=5V C L=1000pF --50 0 50 100 150 --50 0 50 100 150 IT05632 V DD =18V V IN=5V C L=1000pF tD 1 -- Tc Delay Time, tD 1 -- ns Case Temperature, Tc -- °C

No. A0520-4/5 IO (+) -- Tc Output "High" Short Circuit Pulse Current, IO (+) -- A Case Temperature, Tc -- °C 0.4 0.6 0.8 1.0 1.2 --50 0 5 0 100 150 IT10419 V DD =18V 0.2 0.4 0.6 1.6 1.0 0.8 1.2 1.4 05 1 0 15 20 25 30 IT11993 IO (+) -- VDD V IN=5V 0.2 0.4 0.6 1.6 1.0 0.8 1.2 1.4 05 1 0 15 20 25 30 IT11994 IO (--) -- VDD V IN=5V 05 1 0 15 20 25 30 IT11997 Delay Time, tD 1 -- ns tD 1 -- VDD V IN=5V C L=1000pF 05 1 0 15 20 25 30 IT11995 Turn-On Rise Time, tr -- ns tr -- VDD V IN=5V C L=1000pF 05 1 0 15 20 25 30 IT11996 Turn-Off Fall Time, tf -- ns tf -- VDD V IN=5V C L=1000pF 100 120 160 140 05 1 0 15 20 25 30 IT11998 Delay Time, tD 2 -- ns tD 2 -- VDD V IN=5V C L=1000pF Supply V oltage, VDD -- VSupply V oltage, VDD -- V Supply V oltage, VDD -- VSupply V oltage, VDD -- V Supply V oltage, VDD -- VSupply V oltage, VDD -- V Output "High" Short Circuit Pulse Current, IO (+) -- A Output "Low" Short Circuit Pulse Current, IO (--) -- A IO (--) -- Tc Output "Low" Short Circuit Pulse Current, IO (--) -- A Case Temperature, Tc -- °C 0.4 0.6 0.8 1.0 1.2 1.4 --50 0 5 0 100 150 IT10420 V DD =18V

No. A0520-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. 002 04 0 6 0 8 0 100 120 140 160 0.05 0.10 0.15 0.20 0.25 PD -- Ta IT11999 Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C PS