TND315S

TND315S SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• Dual buffer.
• Monolithic structure (High voltage CMOS process adopted).
• W ithstand voltage of 25V is assured.
• W ide range of operating voltage : 4.5V to 25V .
• Peak output current : 1A.
• Fast switching time (30ns typical at 1000pF load).
• Fully compatible input to TTL / CMOS (VIH=up to 2.6V , at VDD =4.5 to 25V).
• Built-in input pull-down resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage V DD 0 to 25 V Input Voltage V IN GND- -0.3 to VDD +0.3 V Allowable Power Dissipation P D max 0.3 W Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Recommended Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage V DD 4.5 to 25 V Operating Temperature Topr --40 to +125 °C Electrical Characteristics (AC Characteristics) at Ta=25°C, VDD =18V , VIN=5V RatingsParameter Symbol Conditions min typ max Unit Turn-On Rise Time t r C L=1000pF 30 45 ns Turn-Off Fall Time t f C L=1000pF 30 45 ns Delay Time tD 1C L=1000pF 30 45 ns tD 2C L=1000pF 45 60 ns SANYO Semiconductors DATA SHEET D0606IP TI IM TB-00001537 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TND315S ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, Switching Power Supply, and DC / DC Converter Applications

No. A0421-2/5 Electrical Characteristics (DC Characteristics) at Ta=25°C, VDD =4.5 to 25V RatingsParameter Symbol Conditions min typ max Unit Logic “1” Input Voltage V IH 2.6 V Logic “0” Input Voltage V IL 0.8 V Logic “1” Input Bias Current I IN+V IN=V DD =25V 40 100 µA Logic “0” Input Bias Current I IN-- V IN=0V or VDD -- 1 1 µA High Level Output Voltage V OH IO =0A V DD -- 0 . 1 V Low Level Output Voltage V OL IO =0A 0.1 V VDD Supply Current Isupp VDD =10V, VIN=3V, (both inputs) 1.0 4.5 mA VDD =10V, VIN=0V, (both inputs) 0.2 mA Output High Short Circuit Pulse Current IO +V DD =18V, PW≤10µs, VOUT =0V 1.0 A Output Low Short Circuit Pulse Current IO -- V DD =18V, PW≤10µs, VOUT =18V 1.0 A Output On Resistance ROUT VDD =18V, Iload=10mA, VOUT =“H” 8 12 Ω VDD =18V, Iload=10mA, VOUT =“L” 6 10 Ω Package Dimensions unit : mm (typ) 7005-007 Block Diagram 5.0 4.4 6.0 0.3 1.5

1.8 MAX

0.10.595 1.27 0.20.43 1 : NC 2 : IN A 3 : GND 4 : IN B 5 : OUT B 6 : VDD 7 : OUT A 8 : NC SANYO : SOP8 VDD IN OUT GND

No. A0421-3/5 Switching Time Test Circuit 90% INPUTINPUT RISE AND FALL TIMES=5ns NONINVERTING OUTPUT 90%90% 10%10% 10% +5V +0.4V +18V 0.1µF OUTPUT A 1000pF 1000pF OUTPUT B INPUT A INPUT B 4.7µF tr tf tD 1 tD 2 VDD =18V TND315S 05 1 0 15 20 25 30 --50 0 50 100 150 IT05628 tr -- Tc Case Temperature, Tc -- °C Turn-On Rise Time, tr -- ns 05 1 0 15 20 25 30 IT05629Supply V oltage, VDD -- V Turn-On Rise Time, tr -- ns V DD =18V V IN=5V C L=1000pF V IN=5V C L=1000pF tr -- VDD IT05630 tf -- Tc Case Temperature, Tc -- °C Turn-Off Fall Time, tf -- ns IT05631Supply V oltage, VDD -- V Turn-Off Fall Time, tf -- ns V DD =18V V IN=5V C L=1000pF V IN=5V C L=1000pF tf -- VDD --50 0 50 100 150

No. A0421-4/5 0.4 0.6 0.8 1.0 1.2 1.4 --50 0 5 0 100 150 IT05637 IO (--) -- Tc Case Temperature, Tc -- °C V DD =18V 0.4 0.6 0.8 1.0 1.2 1.4 --50 0 5 0 100 150 IT05636 Case Temperature, Tc -- °C IO (+) -- Tc V DD =18V 05 1 0 15 20 25 30 100 --50 0 5 0 100 150 --50 0 5 0 100 150 IT05632 tD 1 -- Tc Case Temperature, Tc -- °C Delay Time, tD 1 -- ns IT05633Supply V oltage, VDD -- V Delay Time, tD 1 -- ns V DD =18V V IN=5V C L=1000pF V IN=5V C L=1000pF tD 1 -- VDD IT05634 tD 2 -- Tc Case Temperature, Tc -- °C Delay Time, tD 2 -- ns V DD =18V V IN=5V C L=1000pF Output "High" Short Circuit Pulse Current, IO (+) -- A Output "Low" Short Circuit Pulse Current, IO (--) -- A Output "High / Low" Short Circuit Pulse Current, IO (±) -- A IO (±) -- VDD Supply V oltage, VDD -- V 002 04 0 6 0 8 0 100 120 140 160 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 IT03760 PD -- Ta Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C 0.5 1.0 1.5 2.5 2.0 05 1 0 15 20 25 30 IT11084 V IN=5V C L=10µF tD 2 -- VDD Delay Time, tD 2 -- ns Supply V oltage, VDD -- V 100 120 160 140 05 1 0 15 20 25 30 IT08459 V IN=5V C L=1000pF

No. A0421-5/5 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. PS This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice.