TMF3201J

TMF3201J TACHYONICS | Alldatasheet

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□ Description The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro- miniature plastic package. □ Features - Two AGC amplifiers in a single package - Integrated gate protection diodes - High AGC-range, high gain, low noise figure □ Applications -Two gain controlled input stage for UHF and VHF tuners - Professional communications equipment SOT363 Page 1 of 8 http://www.tachyonics.co.kr January 2005. Rev. 1.0 Dual N-Channel Dual-Gate MOSFET Preliminary Specification TMF3201J □ Absolute Maximum Ratings (Ta = 25 ℃) 1. GATE 1(1) 4. DRAIN (2) 2. GATE 2 5. SOURCE 3. GATE 1(2) 6. DRAIN (1) Unit in mm Drain-Source Voltage Drain Current Gate 1 Current Total Power Dissipation Storage Temperature Operating Junction Temperature T j 150 ℃ Tstg -65 ~ 150 Ptot 200 mW mA IG1 ±10 mA ID 30 Ratings Unit VDS 10 V Per MOSFET ; unless otherwise specified Parameter Symbol Caution : Electro Static Discharge sensitive device, observe handling precaution

□ DC Characteristics ( Tj = 25 ℃, per MOSFET, unless otherwise specified ) Page 2 of 8 http://www.tachyonics.co.kr January. 2005. Rev. 1.0 Gate2 cut-off current Gate1 cut-off current Drain-source current Gate2-source threshold voltage Gate1-source threshold voltage Forward source-gate2 voltage Forward source-gate1 voltage Gate2-source breakdown voltage Gate1-source breakdown voltage Drain-source breakdown voltage PARAMETER 1.2 1.0 1.5 1.5 MAX. ㎁-V G2-S=5V; VG1-S=VDS=0IG2-S ㎁-VG1-S=5V; VG2-S=VDS=0IG1-S ㎃8VG2-S=4V; VDS=5V; RG=62㏀IDSX V0.3VDS=5V; VG1-S=4V; ID=100㎂VG2-S(th) V0.3VDS=5V; VG2-S=4V; ID=100㎂VG1-S(th) V0.5VG1-S=VDS=0; IS-G2=10㎃V(F)S-G2 V0.5VG2-S=VDS=0; IS-G1=10㎃V(F)S-G1 V6VG1-S=VDS=0; IG2-S=10㎃V(BR)G2-SS V6VG2-S=VDS=0; IG1-S=10㎃V(BR)G1-SS V10VG1-S=VG2-S=0; ID=10㎂V(BR)DSS UNITMIN.CONDITIONSYMBOL Cross-modulation Noise figure Power gain Reverse transfer capacitance Output capacitance Input capacitance at gate2 Input capacitance at gate1 Forward transfer admittance PARAMETER MAX.TYP. ㏈㎶-105100k=1%, fw=50MHz; funw=60MHz AGC = 40dB ㏈㎶-92-k=1%, fw=50MHz; funw=60MHz AGC = 10dB ㏈㎶--90k=1%, fw=50MHz; funw=60MHz AGC = 0dB X mod ㏈2.51.7-f=800MHz; Zi = S11 opt(NF) ㏈-1.5-f=400MHz; Zi = S11 opt(NF) NF ㏈-2521f=800MHz; Zi = S11 *, Zo = S22 ㏈-2826f=400MHz; Zi = S11 *, Zo = S22 ㏈-3130f=200MHz; Zi = S11 , Zo = S22 Gtr fF-20-f=1MHzCrss ㎊-1.4-f=1MHzCoss ㎊-3.3-f=1MHzCig2-ss ㎊2.51.9-f=1MHzCig1-ss mS403025Tj=25℃IyFSI UNITMIN.CONDITIONSSYMBOL □ AC Characteristics ( Common source; Ta = 25 ℃, VG2-S = 4V, VDS =5V, ID =12mA ; per MOSFET ;unless otherwise specified ) Preliminary Specification TMF3201J

http://www.tachyonics.co.kr January. 2005. Rev. 1.0Page 3 of 8

10 KOhm

4.7 nF 4.7 nF 4.7 nF 22 pF RGEN

50 Ohm

2.2 uH VAGC VGG

50 Ohm RG1

Fig1. Test Cross-modulation test set-up (for one MOS-FET) Preliminary Specification TMF3201J Scattering parameters 6D ( 1 ) 4D ( 2 ) PIN NO SYMBOL DESCRIPTION

5 S Source

G1(1) G1(2) Gate1_Amp1 Gate2 Gate1_Amp2 Drain_Amp2 Drain_Amp1 □ Pin Configuration □ Making□ Equivalent circuit (Top view) 3: G1(2)2: G2 6: D(1) 4: D(2) 1: G1(1) 5: S DA1 □ Test circuit 3: G1(2)2: G2 6: D(1) 4: D(2) 1: G1(1) 5: S

□ Graphs For One MOSFET Fig.2 Transfer characteristics Fig3. Output characteristics Fig5. Forward transfer admittance as a function of drain current Page 4 of 8 http://www.tachyonics.co.kr January. 2005. Rev. 1.0 VG1-S [V] ID [m A ] 2.5V VG2=4V 1.5V 3.5V 01234567 VD S [ V] ID [ m A ] 1.2V V G1-S : 1. 5V 1.3V 1.4V 0.9V 1.1V Fig.4 Gate1 Current as a function of gate1 Voltage 100 150 200 250 300 VG1-S [V] IG 1 [ u A ] 2.5V 1.5V VG2=4V 3.5V 048 1 2 1 6 2 0 ID [mA] |y fs | [ mS ] VG2-S = 2V 2.5V 3.5V VDS =5V, Tj = 25 ℃ VG2-S = 4V, Tj = 25 ℃ VDS =5V, Tj = 25 ℃ VDS =5V, Tj = 25 ℃ Preliminary Specification TMF3201J

Fig6. Drain current as a function of gate1 current Fig7. Drain current as a function of gate1 supply voltage Page 5 of 8 http://www.tachyonics.co.kr January. 2005. Rev. 1.0 VDS= 5V, V G2-S = 4V, RG1=62㏀, Tj = 25 ℃ VGG [V] ID [ m A ] Fig8. Drain current as a function of gate1 and drain supply voltage ; see Fig1 0123456 VGG=VDS [V] ID [ mA ] 39KΩ 51KΩ 62KΩ 75K Ω 100KΩ 92KΩ RG1 = 33KΩ Fig9. Drain current as a function of gate2 voltage 0123456 VG2-S [V] ID [m A ] 3.5V VGG = 5V 4.5V VDS= 5V, V G2-S = 4V, Tj = 25 ℃ V G2-S = 4V, Tj = 25 ℃, RG1= (Connected to VGG) V DS= 5V, Tj = 25 ℃, RG1=62㏀ Preliminary Specification TMF3201J □ Graphs For One MOSFET 0 20 40 60 80 100 IG1 [uA] ID [ m A ]

Fig10. Gate1 current as a function of gate2 voltage Page 6 of 8 http://www.tachyonics.co.kr January. 2005. Rev. 1.0 Fig11. Typical Gain reduction as a function of AGC Voltage ; see Fig1 VG2-S [V] IG 1 [ u A ] 3.5V VGG : 5V 4.5V f=50MHz, Pin=-30dBm, VDS= 5V, VGG= 5V, RG1=62㏀ Tj = 25 ℃ -50 -40 -30 -20 -10 01234 VAGC [V] G a in re d u c tio n [ d B ] Fig12. Drain current as a function of gain reduction ; see Fig1 0 1 02 03 04 05 0 gain reduction [dB] ID [m A] VDS= 5V, RG1= 62㏀, Tj = 25 ℃;Connected to VGG f=50MHz, Pin=-30dBm, VDS= 5V, VGG= 5V, RG1=62㏀ Preliminary Specification TMF3201J □ Graphs For One MOSFET

Fig13. Input admittance as a function of frequency Page 7 of 8 http://www.tachyonics.co.kr January. 2005. Rev. 1.0 Fig14. Reverse transfer admittance and phase as a function of frequency Fig15. Forward transfer admittance and phase as a function of frequency Fig16. Output admittance as a function of frequency 0.01 0.10 1.00 10.00 10 100 1000 f [M Hz ] YoS [mS] bos gos 100 10 100 1000 f [M Hz ] YiS [mS] bis gis VDS= 5V, V G2-S = 4V V DS= 5V, V G2-S = 4V Preliminary Specification TMF3201J VDS= 5V, V G2-S = 4V V DS= 5V, V G2-S = 4V □ Graphs For One MOSFET 100 10 100 1000 f [M Hz ] |yfs| [mS] 100 φfs [deg]|yfs| φfs -100 -10 100 1000 10 100 1000 f [M Hz ] |yrs| [uS] 100 1000 φrs [deg] |yrs| φrs -1000 -100 -10

http://www.tachyonics.co.kr January. 2005. Rev. 1.0Page 8 of 8 Preliminary Specification TMF3201J Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) S22f (MHz) S11 S21 S12 □ Scattering parameters (VG2-S = 4V, VDS =5V, ID =12mA, Τa = 25 ℃) freq (10.00MHz to 1.000GHz) S(1,1) Input Reflection Coefficient 1E81E7 1E 9 freq, Hz dB(S(2,1)) Forward Transmission, dB 1E81E7 1E9 -60 -40 -20 -80 freq, Hz dB(S(1,2)) Reverse Transmission, dB freq (10.00MHz to 1.000GHz) S(2,2) Output Reflection Coefficient