TMD1013-1 TOSHIBA | Alldatasheet
Document overview
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Technical content
TO S H | = 4 A MICROWAVE POWER MMIC AMPLIFIER TMD1013-1 MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
™ HighPower P1dB=33dBm(TYP.) = HighGain GidB=25dB(TYP.) @ High Power Added Efficiency 7 add=14%(TYP.) m Broadband Operation f=10.0-13.3GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 °C) CHARACTERISTICS SYMBOL RATINGS DRAIN SUPPLY VOLTAGE [wo | Ov OTT GATE SUPPLY VOLTAGE INPUT POWER re FLANGE TEMPERATURE -30~+80 STORAGE TEMPERATURE -65~4175 RF PERFORMANCE SPECIFICATIONS (Ta=25°C) CHARACTERISTICS __| syMBoL | _ CONDITION Output Power. at 1dB - P1dB dBm 33 | = | Gain Compression Point. VDD=10V Gain Compression voce ® P= |] | Gain Compression Point Power Added Efficienc p« | — | w | — | Third Order Intermodulation IM8 2Tone @ dBe -42 45 Distortion Po=19dBm(SCL) VSWRin (small signal [= [ = | 2 | 30 | @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA. for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. oo The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. aes TOSHIBA CORPORATION qq aS gan. 2000
PACKAGE OUTLINE (2-9E1D) Unit in mm oe 2.4 Ss 10 | [Nos O@OO® : No Connection +1 un) - 3. 86 az a pune ol L j@ © ® : RF Input i — 8 = Gea oul ow @® : VGG o—5 ACESE Pr Fi ®© : No Connection (Open) PERE ars @® : VDD = e— ® : RF Output Lat a ® : Orientation Tab . +1 }Ly~_ 4-RO.5 g| ——— aisiaty 3| Sg S RIBS A s3B 7: VDD Recommended Bias Configuration 0 S 1pF an 1,000pF ae “uF 3:RF Input ——_| 8:RF Output 0. O O 10-50 u F GND : Base Plate
VDD=10V, VGG=—5V a a (GHz)