TMC1420-LA TRINAMIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany TMC1420-LA DATASHEET TMC262 WITH 4X TMC1420-LA MOSFETS +VM SRB RSENSE S G DD G S PN Motor coil B HB2 HB1 BMB1 BMB2 S G DD G S PN LB1 LB2 +VM SRA RSENSE D G S S G D P N Motor coil A HA2 HA1 BMA1 BMA2 D G S S G D P N LA1 LA2 10R10R TMC262 TMC1420 TMC1420 TMC1420 TMC1420 Order code Description Size TMC1420-LA N and P-channel enhancement mode power MOSFET 5 x 6 mm2 PRODUCT SUMMARY N-CH P-CH BVDSS RDS(ON) ID 40V 26.5mΩ 8.8A -40V 42mΩ -7.3A FEATURES AND BENEFITS N & P-Channel MOSFET Half Bridge Device Simple Drive Requirement Good Thermal Performance IR-reflow and backside heat sink Fast Switching Performance for quick motor reaction PQFN package, 5x6 mm RoHS Compliant and Halogen-Free
APPLICATIONS
TMC1420 MOSFETs fit best with TRINAMIC 2 -phase bipolar stepper motor drivers: TMC262: up to 4A RMS motor current with 4xTMC1420-LA TMC248: up to 3.5A RMS motor current with 4xTMC1420-LA TMC249: up to 3.5A RMS motor current with 4xTMC1420-LA
DESCRIPTION
The TMC 1420-LA is highly energy efficient. Employing silicon process technology, the TMC 1420 achieves an extremely low on -state resistance and fastest switching performance. The TMC1420-LA is intended for power conversion and power management applications that require high efficiency and power density. The PQFN 5x6 package uses standard infrared reflow technique with the backside heat sink and has a very good thermal performance. The package is similar to other enhanced SO -8 packages in the market, such as LFPak and PowerSO-8. Dual N & P-Channel 40V Power MOSFET with extremely low on-resistance. High energy efficiency and good thermal performance.
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 2 www.trinamic.com Table of Contents
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 3 www.trinamic.com
1 Pin Assignments
Front view / internal circuit D1 D1 D2 D2 D2 D2 D1 D1 S1 G1 S2 G2 Figure 1.1 TMC1420-LA pin assignments
2 Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current*2 ID@TA = 25°C 8.8 -7.3 A Continuous Drain Current*2 ID@TA = 70°C 7 -5.8 A Pulsed Drain Current*1 IDM 30 -30 A Total Power Dissipation PD@TA = 25°C 3.57 W Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C *1 Pulse width is limited by maximum junction temperature. *2 Surface mounted on 1 in² copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.
3 Thermal Data
Parameter Symbol N-channel P-channel Unit Max. Thermal Resistance, Junction-case Rthj-c 6 6 °C/W Max. Thermal Resistance, Junction-ambient* Rthj-a 35 35 °C/W * Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 4 www.trinamic.com
4 Electrical Characteristics
4.1 N-CH @Tj=25°C (unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 40 V Static Drain-Source On-Resistance* RDS(ON) VGS=10V, ID=7A VGS=4.5V, ID=5A 21.2 32.7 26.5 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=250µA 1 1.7 3 V Forward Transconductance gfs VDS= 10V, ID=7A 14 S Drain-Source Leakage Current IDSS VDS= 32V, VGS=0V 10 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±30 mA Total Gate Charge Qg ID=7A VDS=20V VGS=4.5V 7 11.2 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain ("Miller") Charge Qgd 3.7 nC Turn-on Delay Time td(on) VDS=20V ID=1A RG=3.3Ω VGS=5V 6 ns Rise Time tr 18 ns Turn-off Delay Time td(off) 17 ns Fall Time tf 19 ns Input Capacitance Ciss VGS=0V VDS=15V f=1.0MHz 660 1050 pF Output Capacitance Coss 120 pF Reverse Transfer Capacitance Crss 75 pF Gate Resistance Rg f=1.0MHz 2.2 4.4 Ω * Pulse test
4.1.1 Source-Drain Diode
Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=2.9A 1.2 V Reverse Recovery Time trr VGS=0V, IS=7A dl/dt=100A/µs 24 ns Reverse Recovery Charge Qrr 21 nC * Pulse test
4.2 P-CH @Tj=25°C (unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -40 V Static Drain-Source On-Resistance* RDS(ON) VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A 33.3 53.3 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250µA -1 -1.7 -3 V Forward Transconductance gfs VDS= -10V, ID=-5A 11 S Drain-Source Leakage Current IDSS VDS= -32V, VGS=0V -10 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±30 mA Total Gate Charge Qg ID=-5A VDS=-20V VGS=-4.5V 11.5 18.4 nC Gate-Source Charge Qgs 2.3 nC Gate-Drain ("Miller") Charge Qgd 7 nC Turn-on Delay Time td(on) VDS=-20V ID=-1A RG=3.3Ω VGS=-5V 7 ns Rise Time tr 20 ns Turn-off Delay Time td(off) 34 ns Fall Time tf 29 ns Input Capacitance Ciss VGS=0V VDS=-15V f=1.0MHz 720 1150 pF Output Capacitance Coss 205 pF Reverse Transfer Capacitance Crss 165 pF Gate Resistance Rg f=1.0MHz 6 12 Ω * Pulse test
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 5 www.trinamic.com
4.2.1 Source-Drain Diode
Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=-2.9A -1.2 V Reverse Recovery Time trr VGS=0V, IS=-5A dl/dt=100A/µs 32 ns Reverse Recovery Charge Qrr 34 nC * Pulse test
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 6 www.trinamic.com
5 N-Channel Diagrams
Figure 5.1 Typical output characteristics Figure 5.2 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.5 Forward characteristic of reverse diode Figure 5.6 Gate threshold voltage v.s. junction temperature
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 8 www.trinamic.com
6 P-Channel Diagrams
Figure 6.1 Typical output characteristics Figure 6.2 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.5 Forward characteristic of r everse diode Figure 6.6 Gate Threshold voltage v.s. junction temperature
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 10 www.trinamic.com
7 Package Mechanical Data
7.1 PQFN 5x6 Dimensional Drawings
Figure 7.1 Dimensional drawings
7.2 Package Marking Information
Meet RoHS requirement for low volatage MOSFET only Package code Date code Y: last digit of year WW: week SSS: sequence Figure 7.2 Package marking information
7.3 Package Code
Device Package Temperature range Code/ Marking TMC1420 PQFN 5x6 -55° to +150°C TMC1420-LA Symbols Min Nom Max A 0.90 1.00 1.10 b 0.33 0.41 0.51 C 0.20 D1 4.80 4.90 5.10 D2 4.20 E 5.90 6.00 6.10 E1 (reference) 5.70 5.75 5.80 E2 (reference) 3.38 3.58 3.78 e 1.27 BSC H 0.62 K (reference) 0.70 L 0.51 0.61 0.71 L1 0.20 (reference) 0˚ 12˚ Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions.
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 11 www.trinamic.com
8 Disclaimer
TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners.
9 ESD Sensitive Device
The TMC1420-LA is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so can res ult in defect or decreased reliability.
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 12 www.trinamic.com
10 Table of Figures
SD – Sonja Dwersteg 1.00 2013-MAR-18 SD Initial version 1.01 2014-MAY-12 SD RMS motor current values in combination with TMC262, TMC248, and TMC249 updated. Table 11.1 Documentation revisions