TMC1620-TO

TMC1620-TO TRINAMIC | Alldatasheet

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Technical content

POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany TMC1620-TO DATASHEET TMC262 WITH 4X TMC1620-TO MOSFETS +VM SRB RSENSE S G DD G S PN Motor coil B HB2 HB1 BMB1 BMB2 S G DD G S PN LB1 LB2 +VM SRA RSENSE D G S S G D P N Motor coil A HA2 HA1 BMA1 BMA2 D G S S G D P N LA1 LA2 10R10R TMC262 TMC1620 TMC1620 TMC1620 TMC1620 Order code Description Size TMC1620-TO N and P-channel enhancement mode power MOSFET 6.5 x 10 mm2 PRODUCT SUMMARY N-CH P-CH BVDSS RDS(ON) ID 60V 36mΩ 6.6A -60V 75mΩ -4.7A FEATURES AND BENEFITS N & P-Channel MOSFET Half Bridge Device Simple Drive Requirement Good Thermal Performance Fast Switching Performance for quick motor reaction RoHS Compliant and Halogen-Free

APPLICATIONS

TMC1620-TO MOSFETs fit best with TRINAMIC bipolar stepper motor drivers: TMC262: two-phase stepper motor driver; up to 3.5A (48V DC) or 4.5A (24V DC) RMS motor current with 4xTMC1620-TO. TMC389: three-phase stepper motor driver; up to 3.5A (48V DC) or 4.5A (24V DC) RMS motor current with 3xTMC1620-TO.

DESCRIPTION

This advanced TMC1620-TO power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost-effectiveness. The highly energy efficient TMC 1620 is intended for power conversion and power management applications that require high efficiency and power density. The TO-252-4L 6.5x10mm package has a very good thermal performance. Dual N & P-Channel 60V Power MOSFET with low on-resistance and fast switching performance High energy efficiency and good thermal performance.

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 2 www.trinamic.com Table of Contents

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 3 www.trinamic.com

1 Pin Assignments

Figure 1.1 TMC1620-TO pin assignments

2 Absolute Maximum Ratings

The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current*2 ID@TA = 25°C 6.6 -4.7 A Continuous Drain Current*2 ID@TA = 70°C 5.3 -3.8 A Pulsed Drain Current*1 IDM 20 -20 A Total Power Dissipation PD@TA = 25°C 3.13 W Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C *1 Pulse width is limited by maximum junction temperature. *2 N-CH, P-CH are same, mounted on 2oz FR4 board t≤10s.

3 Thermal Data

Parameter Symbol Value Unit Max. Thermal Resistance, Junction-case Rthj-c 6 °C/W Max. Thermal Resistance, Junction-ambient* Rthj-a 40 °C/W * Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.

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4 Electrical Characteristics

4.1 N-CH @Tj=25°C (unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 60 V Static Drain-Source On-Resistance* RDS(ON) VGS=10V, ID=6A VGS=4.5V, ID=4A 36 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=250µA 1 3 V Forward Transconductance gfs VDS= 10V, ID=5A 12.5 S Drain-Source Leakage Current IDSS VDS= 48V, VGS=0V 10 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±100 mA Total Gate Charge* Qg ID=5A VDS=48V VGS=4.5V 12 19.2 nC Gate-Source Charge Qgs 3 nC Gate-Drain ("Miller") Charge Qgd 7 nC Turn-on Delay Time td(on) VDS=30V ID=5A RG=3.3Ω VGS=10V 7 ns Rise Time tr 10.5 ns Turn-off Delay Time td(off) 23 ns Fall Time tf 5 ns Input Capacitance Ciss VGS=0V VDS=25V f=1.0MHz 975 1560 pF Output Capacitance Coss 75 pF Reverse Transfer Capacitance Crss 65 pF Gate Resistance Rg f=1.0MHz 1.6 3.2 Ω * Pulse test

4.1.1 Source-Drain Diode

Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=2.4A 1.3 V Reverse Recovery Time* trr VGS=0V, IS=5A dl/dt=100A/µs 23 ns Reverse Recovery Charge Qrr 22 nC * Pulse test

4.2 P-CH @Tj=25°C (unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -60 V Static Drain-Source On-Resistance* RDS(ON) VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A 75 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250µA -1 -3 V Forward Transconductance gfs VDS= -10V, ID=-3A 11 S Drain-Source Leakage Current IDSS VDS= -48V, VGS=0V -10 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±100 mA Total Gate Charge* Qg ID=-3A VDS=-48V VGS=-4.5V 14 22.4 nC Gate-Source Charge Qgs 2.5 nC Gate-Drain ("Miller") Charge Qgd 8 nC Turn-on Delay Time* td(on) VDS=-30V ID=-3A RG=3.3Ω VGS=-10V 9 ns Rise Time tr 9.5 ns Turn-off Delay Time td(off) 42 ns Fall Time tf 28 ns Input Capacitance Ciss VGS=0V VDS=-25V f=1.0MHz 1000 1600 pF Output Capacitance Coss 125 pF Reverse Transfer Capacitance Crss 95 pF Gate Resistance Rg f=1.0MHz 1.6 3.2 Ω * Pulse test

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 5 www.trinamic.com

4.2.1 Source-Drain Diode

Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=-2.4A -1.3 V Reverse Recovery Time trr VGS=0V, IS=-3A dl/dt=-100A/µs 30 ns Reverse Recovery Charge Qrr 45 nC * Pulse test

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 6 www.trinamic.com

5 N-Channel Diagrams

Figure 5.1 Typical output characteristics Figure 5.2 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.5 Forward characteristic of reverse diode Figure 5.6 Gate threshold voltage v.s. junction temperature

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 8 www.trinamic.com

6 P-Channel Diagrams

Figure 6.1 Typical output characteristics Figure 6.2 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.5 Forward characteristic of r everse diode Figure 6.6 Gate Threshold voltage v.s. junction temperature

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 10 www.trinamic.com

7 Package Mechanical Data

7.1 Dimensional Drawings

Figure 7.1 Dimensional drawings Symbols Min Nom Max A 6.40 6.60 6.80 B 5.20 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 P 1.27 REF. S 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80

7.2 Package Marking Information and Package Code

WW: SSS: last digit of the year week sequence Figure 7.2 Package marking information Device Package Temperature range Code/ Marking TMC1620 TO-252-4L package 6.5x10 -55° to +150°C TMC1620-TO Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions.

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8 Disclaimer

TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support o r sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. Howe ver no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners.

9 ESD Sensitive Device

The TMC1620-TO is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or decreased reliability.

TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12) 12 www.trinamic.com

10 Table of Figures

SD – Sonja Dwersteg 0.90 2014-FEB-26 SD Initial version 1.00 2014-MAR-18 SD New front picture, thermal data corrected 1.01 2014-MAY-12 SD RMS motor current in combination with TMC262 and TMC389 updated.