TMC1320-LA

TMC1320-LA TRINAMIC | Alldatasheet

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Technical content

POWER MOSFETs FOR STEPPER MOTORS INTEGRATED CIRCUITS TRINAMIC Motion Control GmbH & Co. KG Hamburg, Germany TMC1320-LA DATASHEET TMC262 WITH 4X TMC1320-LA MOSFETS +VM SRB RSENSE S G DD G S PN Motor coil B HB2 HB1 BMB1 BMB2 S G DD G S PN LB1 LB2 +VM SRA RSENSE D G S S G D P N Motor coil A HA2 HA1 BMA1 BMA2 D G S S G D P N LA1 LA2 10R10R TMC262 TMC1320 TMC1320 TMC1320 TMC1320 Order code Description Size TMC1320-LA N and P-channel enhancement mode power MOSFET 3.1 x 3.1 mm2 PRODUCT SUMMARY N-CH P-CH BVDSS RDS(ON) ID 30V 30mΩ 7.3A -30V 60mΩ -5.3A FEATURES AND BENEFITS N & P-Channel MOSFET Half Bridge Device Simple Drive Requirement Good Thermal Performance Fast Switching Performance for quick motor reaction RoHS Compliant and Halogen-Free

APPLICATIONS

TMC1320 MOSFETs fit best with TRINAMIC 2 -phase bipolar stepper motor drivers: TMC262: up to 3.5A RMS motor current with 4xTMC1320-LA TMC248: up to 3A RMS motor current with 4xTMC1320 TMC249: up to 3A RMS motor current with 4xTMC1320-LA

DESCRIPTION

The advanced TMC1320-LA Power MOSFET provides the designer with the best combination of fast switching, low on - resistance and cost -effectiveness. The highly energy efficient TMC1320 is intended for power conversion and power management applications that require high efficiency and power density. The PQFN 3x3 package has a backside heat sink. It is compatible with other DFN3 packages offering attractive thermal and electrical performance combined with a very small footprint. Dual N & P-Channel 30V Power MOSFET with low on-resistance and fast switching performance. High energy efficiency and good thermal performance.

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 2 www.trinamic.com Table of Contents

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 3 www.trinamic.com

1 Pin Assignments

Figure 1.1 TMC1320-LA pin assignments

2 Absolute Maximum Ratings

The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near more than one maximum rating at a time for extended periods shall be avoided by application design. Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current*2 ID@TA = 25°C 7.3 -5.3 A Continuous Drain Current*2 ID@TA = 70°C 5.8 -4.2 A Pulsed Drain Current*1 IDM 28 -20 A Total Power Dissipation PD@TA = 25°C 2.5 W Linear Derating Factor 0.02 W/°C Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C *1 Pulse width is limited by maximum junction temperature. *2 Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 90˚C/W at steady state.

3 Thermal Data

Parameter Symbol Value Unit Max. Thermal Resistance, Junction-case Rthj-c 10 °C/W Max. Thermal Resistance, Junction-ambient* Rthj-a 50 °C/W * Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 90˚C/W at steady state.

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4 Electrical Characteristics

4.1 N-CH @Tj=25°C (unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 30 V Static Drain-Source On-Resistance* RDS(ON) VGS=10V, ID=4A VGS=4.5V, ID=3A 30 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=250µA 1 3 V Forward Transconductance gfs VDS= 10V, ID=4A 8.5 S Drain-Source Leakage Current IDSS VDS= 24V, VGS=0V 1 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±100 mA Total Gate Charge* Qg ID=4A VDS=15V VGS=4.5V 4.5 7.2 nC Gate-Source Charge Qgs 1 nC Gate-Drain ("Miller") Charge Qgd 2.5 nC Turn-on Delay Time td(on) VDS=15V ID=1A RG=3.3Ω VGS=10V 8 ns Rise Time tr 9 ns Turn-off Delay Time td(off) 16 ns Fall Time tf 3 ns Input Capacitance Ciss VGS=0V VDS=25V f=1.0MHz 250 400 pF Output Capacitance Coss 55 pF Reverse Transfer Capacitance Crss 50 pF * Pulse width ≤ 300µs, duty cycle ≤ 2%

4.1.1 Source-Drain Diode

Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=1.2A 1.2 V Reverse Recovery Time* trr VGS=0V, IS=4A dl/dt=100A/µs 15 ns Reverse Recovery Charge Qrr 7 nC * Pulse width ≤ 300µs, duty cycle ≤ 2%

4.2 P-CH @Tj=25°C (unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -30 V Static Drain-Source On-Resistance* RDS(ON) VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A 60 mΩ mΩ Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250µA -1 -3 V Forward Transconductance gfs VDS= -10V, ID=-4A 9 S Drain-Source Leakage Current IDSS VDS= -24V, VGS=0V -1 mA Gate-Source Leakage IGSS VDS= 0V, VGS=±20V ±100 mA Total Gate Charge* Qg ID=-4A VDS=-15V VGS=-4.5V 7 11.2 nC Gate-Source Charge Qgs 1.5 nC Gate-Drain ("Miller") Charge Qgd 3.5 nC Turn-on Delay Time* td(on) VDS=-15V ID=-1A RG=3.3Ω VGS=-10V 10 ns Rise Time tr 11 ns Turn-off Delay Time td(off) 22 ns Fall Time tf 9 ns Input Capacitance Ciss VGS=0V VDS=-25V f=1.0MHz 570 910 pF Output Capacitance Coss 80 pF Reverse Transfer Capacitance Crss 75 pF * Pulse width ≤ 300µs, duty cycle ≤ 2%

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 5 www.trinamic.com

4.2.1 Source-Drain Diode

Parameter Symbol Test Conditions Min Typ Max Unit Forward On Voltage* VSD VGS=0V, IS=-1.2A -1.2 V Reverse Recovery Time* trr VGS=0V, IS=-4A dl/dt=-100A/µs 19 ns Reverse Recovery Charge Qrr 13 nC * Pulse width ≤ 300µs, duty cycle ≤ 2%

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 6 www.trinamic.com

5 N-Channel Diagrams

Figure 5.1 Typical output characteristics Figure 5.2 Typical output characteristics Figure 5.3 On-resistance v.s. gate voltage Figure 5.4 Normalized on-resistance v.s. junction temperature Figure 5.5 Forward characteristic of reverse diode Figure 5.6 Gate threshold voltage v.s. junction temperature

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 8 www.trinamic.com

6 P-Channel Diagrams

Figure 6.1 Typical output characteristics Figure 6.2 Typical output characteristics Figure 6.3 On-resistance v.s. gate voltage Figure 6.4 Normalized on-resistance v.s. junction temperature Figure 6.5 Forward characteristic of r everse diode Figure 6.6 Gate Threshold voltage v.s. junction temperature

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 10 www.trinamic.com

7 Package Mechanical Data

7.1 Dimensional Drawings

A c3 B e b2 C BOTTOM VIEW Figure 7.1 Dimensional drawings Symbols Min Nom Max A 2.90 3.10 3.40 B 2.20 2.45 2.80 e 0.60 0.65 0.70 b2 0.20 0.30 0.40 C 2.90 3.10 3.40 c1 0.10 0.30 0.50 c2 1.20 1.70 2.20 C3 0.10 0.38 0.65 D 0.65 0.80 1.05 d1 0.00 0.10 0.20 E 0.10 0.18 0.25

7.2 Package Marking Information and Package Code

Y: last digit of year WW: week SSS: sequence Figure 7.2 Package marking information Device Package Temperature range Code/ Marking TMC1320 PQFN 3 x3, I-type -55° to +150°C TMC1320-LA Note: All dimensions are in millimeters. Drawings are not to scale. The dimensions do not include mold protrusions.

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 11 www.trinamic.com

8 Disclaimer

TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co. KG. Life support systems are equipment intended to support or sustain life, and whose failure to perform, when properly used in accordance with instructions provided, can be reasonably expected to result in personal injury or death. Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Specifications are subject to change without notice. All trademarks used are property of their respective owners.

9 ESD Sensitive Device

The TMC1320-LA is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care to use adequate grounding of personnel and machines in manual handling. After soldering the devices to the board, ESD requirements are more relaxed. Failure to do so c an result in defect or decreased reliability.

TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12) 12 www.trinamic.com

10 Table of Figures

SD – Sonja Dwersteg 0.92 2014-MAR-13 SD Initial version 1.00 2014-MAR-18 SD RMS current corrected. Front picture added. Total gate charge corrected. 1.01 2014-MAY-12 SD RMS motor current values in combination with TMC262, TMC248, and TMC249 updated.