TM90EZ-2H

TM90RZ-24 MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers TM90RZ/EZ-24,-2H

• VRRM Repetitive peak reverse voltage .... 1200/1600V
• VDRM Repetitive peak off-state voltage .... 1200/1600V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 93.5 16.5 23 23 3–M5 2–φ6.5 K1 G1 Tab#110, t=0.5 6.5 (RZ) A1K2 CR K1 K1 G1 (EZ) A1 CR K1K2 K1 G1SR SR LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 1200 1350 960 1200 1350 960 1600 1700 1280 1600 1700 1280 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=82°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=125°C Charged part to case Main terminal screw M5 Mounting screw M6 Typical value Ratings 140 1800 1.4 × 104 100 5.0 0.5 5.0 2.0 –40~125 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I 2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=270A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Min. 500 0.25 Typ. Max. 1.4 2.0 100 0.3 0.2 Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.

Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg Rth (j-c) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE) CURRENT GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) CURRENT (A)GATE VOLTAGE (V) SURGE (NON-REPETITIVE) CURRENT (A) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V) GATE CURRENT (mA) TIME (s) Rth (c-f) –110 –310 –210 010 010 110 110 010 110 210 310 410 –110 310 210 110 010 7050302075320 400 2000 800 1200 1600 101 100 753275327532 VGT=3.0V IGT= 100mA IFGM=2.0A PGM=5.0W VFGM=10V VGD=0.25V PG(AV)= 0.50W Tj=25°C 0.8 Tj=125°C 753275327532 0.40 7532 0.05 0.10 0.15 0.20 0.25 0.30 0.35

Feb.1999 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) AVERAGE CURRENT (A)AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) AVERAGE CURRENT (A) AVERAGE CURRENT (A) LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) AVERAGE POWER DISSIPATION (W) RMS CURRENT (A)RMS CURRENT (A) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C) MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 0 0 16020 160 8040 60 100 120 140 100 120 140 θ 360° θ=30° 60° 270° DC 180° 120° 90° 130 100 110 120 0 16020 8040 60 100 120 140 θ=30° 60° DC270° θ 360° 90° 120° 180° 0 0 200 40 320 80 120 160 120 160 200 240 280 θ=180° 60° 30° θ 360° θ 120° 90° 50 0 200 40 130 80 120 160 120 110 100 θ 360° θ θ=30° 60°,90° 180°,120° 0 0 100 80 160 100 120 140 20 40 60 θ=30° 120° 90° 180° θ 360° 60° 130 50 0 60 10020 100 110 120 40 80 θ=30° 60° 90° θ 360° 120° 180° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE

Feb.1999 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) 0 0 320 16080 320 240 40 280 120 200 120 160 200 240 280 θ=30° 60° 120°90° θ 360° 50 0 320 16080 130 240 40 280 120 200 100 110 120 90°θ=30° 60° θ 360° 120° 0 0 200 320 280 240 200 160 120 12040 80 160 θ=30° 60° 120° 90° 180° θ 360° θ 130 50 0 200 40 120 80 160 100 110 120 120° θ 360° θ θ=30° 60° 180°90° RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD