TM60SA-6 MITSUBISHI | Alldatasheet

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Technical content

Feb.1999 MITSUBISHI THYRISTOR MODULES TM60SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Welders TM60SA-6

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • TRIPLE ARMS
  • Non-Insulated Type 3–φ6×7 18 20 20 1 2–φ6.5 K1 G1 K2 G2 93.5 G3 K3 K3 K2 K1 A Tab#110 t=0.5 4 2.2 6.5 19 9 K1K2K3 A CR3 CR2 CR1 LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM60SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE 300 360 240 300 360 240 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A N·m kg·cm N·m kg·cm g Conditions Three-phase, half-wave, T C=125°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=150°C Main terminal screw M5 Mounting screw M6 Typical value Ratings 1200 6.0 × 10 5.0 0.5 5.0 2.0 –40~+150 –40~+125 1.47~1.96 15~20 1.96~2.94 20~30 160 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Test conditions T j=150°C, VRRM applied Tj=150°C, VDRM applied Tj=150°C, ITM=180A, instantaneous meas. Tj=150°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=150°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/3 module) Case to fin, conductive grease applied (per 1/3 module) Min. 200 0.25 Typ. Max. 1.2 3.0 100 0.3 0.3

Feb.1999 MITSUBISHI THYRISTOR MODULES TM60SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) ON-STATE CURRENT (A)GATE VOLTAGE (V) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLE AT 60Hz) ON-STATE VOLTAGE (V) GATE CURRENT (mA) TIME (s) MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE ( °C) –110 –210 –310 010 010 110 110 010 410 310 210 110 –110 310 210 110 010 753275327532 VGT=3.0V IGT= 100mA IFGM=2.0A PGM=5.0W VFGM=10V VGD=0.25V PG(AV)= 0.50W Tj=25°C 0.6 Tj=150°C 753275327532 0.40 7532 0.05 0.10 0.15 0.20 0.25 0.30 0.35 7050302075320 400 2000 101 100 800 1200 1600 0 08 0 3010 50 70 20 40 60 θ=30° 120° 90° 180° 60° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 150 70 06 0 8 010 20 50 100 110 120 130 140 30 40 70 θ=30° 60° 90° θ 360° 180° 120° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT

Feb.1999 MITSUBISHI THYRISTOR MODULES TM60SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE ( °C) AVERAGE ON-STATE POWER DISSIPATION (W) 0 0 100 20 100 40 60 80 θ 360° θ=30° 60° 270° DC 180° 120° 90° 100 0 100 20 150 110 40 60 120 130 140 90° θ 360° θ=30° 270° DC 120° 180° 60° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT