TM55CZ-24

TM55DZ-24 MITSUBISHI | Alldatasheet

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Feb.1999 (DZ) A1K2 CR1 K1 G1CR2 K2 G2 (CZ) A1 CR1 K1K2 K1 G1CR2 K2 G2 93.5 16.5 23 23 3–M5 2–φ6.5 K1 G1 K2 G2 Tab # 110, t=0.5 6.5 LABEL MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers TM55DZ/CZ-24,-2H

• VRRM Repetitive peak reverse voltage
• VDRM Repetitive peak off-state voltage
• DOUBLE ARMS
• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 1200 1350 960 1200 1350 960 1600 1700 1280 1600 1700 1280 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=81°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=125°C Charged part to case Main terminal screw M5 Mounting screw M6 Typical value Ratings 1100 5.0 × 10 100 5.0 0.5 5.0 2.0 –40~+125 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=165A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Min. 500 0.25 Typ. Max. 1.5 2.0 100 0.5 0.2

Feb.1999 010 110 010 –110 –210 –310 –110 110 010 110 210 310 410 310 210 110 010 705030207532200 400 1200 600 800 1000 101 1000.6 Tj=125°C 753275327532 VGT=2.0V IGT= 100mA IFGM=2.0A PGM=5.0W VFGM=10V VGD=0.25V PG(AV)= 0.50W Tj=25°C 753275327532 0.8 7532 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 08 0 3010 50 70 20 40 60 θ=30° 120° 90° 180° θ 360° 60° 130 50 06 0 8 010 20 50 100 110 120 30 40 70 θ=30° 60° θ 360° 120° 180°90° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT ON-STATE CURRENT (A) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V)AVERAGE ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) CASE TEMPERATURE (°C) TIME (s)GATE CURRENT (mA) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE

Feb.1999 0 0 100 20 100 40 60 θ 360° θ=30° 60° 270° DC 180° 120° 90° 130 100 110 120 0 100 20 8040 60 θ=30° 60° DC270° θ 360° 180°90° 120° 0 0 160 4020 160 140 120 100 80 100 120 140 θ=180° 60° 90° 30° θ 360° θ 120° 50 0 160 4020 130 60 80 100 120 140 100 110 120 θ 360° θ θ=30° 60° 90° 120° 180° 0 0 160 6020 160 100 140 120 100 12040 80 140 θ=30° 60° 120° 90° 180° θ 360° θ 130 50 0 160 4020 100 120 60 80 140 100 110 120 θ 360° θ RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C) (PER SINGLE MODULE) MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE

Feb.1999 0 0 160 8040 160 120 140 120 100 20 140 60 100 θ=30° 60° 120° 90° θ 360° 50 0 160 8040 130 120 20 140 60 100 100 110 120 90° θ=30° 60° 120° θ 360° RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) MITSUBISHI THYRISTOR MODULES TM55DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE