TM20RA-M MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers TM20RA-M,-H

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • MIX DOUBLE ARMS
  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 A1 A2 8.5 36 4–M4 2–φ5.5 47.6 Tab#110, t=0.5 2.0 16.5 24.5 CR A1 A2 SR K1 K2 LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE M 400 480 320 400 480 320 H 800 960 640 800 960 640 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=87°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=0.5A, Tj=125°C Charged part to case Main terminal screw M4 Mounting screw M5 Typical value Ratings 400 6.7 × 10 100 5.0 0.5 5.0 2.0 –40~125 –40~125 2500 0.98~1.47 10~15 1.47~2.45 15~25 Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I 2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current Foward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=60A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Min. 500 0.25 Typ. Max. 4.0 4.0 1.8 3.0 1.0 0.25 Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.

Feb.1999 –110 –310 –210 010 010 110 110 010 410 310 210 110 –110 210 310 110 010 7050302075320 100 500 200 300 400 101 1000.5 1.5 2.5 3.5 4.5 Tj=125°C 753275327532 VGT=3.0V IGT= 50mA IFGM=2.0A PGM=5.0W VFGM=10V VGD=0.25V PG(AV)= 0.50W Tj= 25°C 753275327532 0.2 0.4 0.6 0.8 1.0 7532 MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg Rth (j-c) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE) CURRENT GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) CURRENT (A)GATE VOLTAGE (V) SURGE (NON-REPETITIVE) CURRENT (A) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V) GATE CURRENT (mA) TIME (s) Rth (c-f)

Feb.1999 0 04 0 2010 53 5 15 25 θ=30° 60° 180° 270° 120° 90° DC θ 360° 0 02 0 105 θ=30° 60° 120°90° 180° θ 360° 130 100 110 120 02 0 105 15 θ 360° 50 04 0 2010 130 120 110 100 53 5 15 25 270°θ=30° 60° 90° 120° 180° DC θ 360° 0 05 0 2010 θ=180° 60° 90° 30° θ 360° θ 80 05 0 2010 130 100 105 110 115 120 125 θ 360° θ θ=30° 60°,90° 180° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) AVERAGE CURRENT (A)AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) AVERAGE CURRENT (A) AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) RMS CURRENT (A)RMS CURRENT (A) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C) MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION)

Feb.1999 0 04 0 2010 351552 5 θ=30° 60° 120° 90° 180° θ 360° θ θ 360° θ 130 100 110 120 04 0 2010 30 351552 5 0 08 0 4020 10 70 30 50 θ=30° 60° 120° 90° θ 360° 50 08 0 4020 130 120 110 100 10 70 30 50 90°θ=30° 60° 120° θ 360° RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) MITSUBISHI THYRISTOR MODULES TM20RA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES)