TM20DA-M MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers TM20DA-M,-H

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • DOUBLE ARMS
  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 A1 A2 8.5 36 4–M4 2–φ5.5 47.6 Tab#110, t=0.5 2.0 16.5 24.5 CR1 A1 A2 CR2 K1 K2 LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE M 400 480 320 400 480 320 H 800 960 640 800 960 640 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=87°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=0.5A, Tj=125°C Charged part to case Main terminal screw M4 Mounting screw M5 Typical value Ratings 400 6.7 × 10 100 5.0 0.5 5.0 2.0 –40~+125 –40~+125 2500 0.98~1.47 10~15 1.47~2.45 15~25 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=60A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Min. 500 0.25 Typ. Max. 4.0 4.0 1.8 3.0 1.0 0.25

Feb.1999 010 010 110 –110 –210 –310 –110 110 010 410 310 210 110 310 210 110 –110 7050302075320 100 500 200 300 400 101 1000.5 1.5 2.5 3.5 4.5 Tj=125°C 753275327532 VGT=3.0V IGT= 50mA IFGM=2.0A PGM=5.0W VFGM=10V VGD=0.25V PG(AV)= 0.50W Tj= 25°C 753275327532 0.2 0.4 0.6 0.8 1.0 7532 0 02 0 105 θ=30° 60° 120°90° 180° θ 360° 130 100 110 120 02 0 105 15 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT θ 360° PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT ON-STATE CURRENT (A) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V)AVERAGE ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) CASE TEMPERATURE (°C) TIME (s)GATE CURRENT (mA) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE

Feb.1999 50 04 0 2010 130 120 110 100 53 5 15 25 270°θ=30° 60° 90° 120° 180° DC θ 360° 0 04 0 2010 53 5 15 25 θ=30° 60° 180° 270° 120° 90° DC θ 360° 0 05 0 2010 θ=180° 60° 90° 30° θ 360° θ 80 05 0 2010 130 100 105 110 115 120 125 θ 360° θ θ=30° 60°,90° 180° 0 04 0 2010 351552 5 θ=30° 60° 120° 90° 180° θ 360° θ θ 360° θ 130 100 110 120 04 0 2010 30 351552 5 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C) (PER SINGLE MODULE) MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE

Feb.1999 0 08 0 4020 10 70 30 50 θ=30° 60° 120° 90° θ 360° 50 08 0 4020 130 120 110 100 10 70 30 50 90°θ=30° 60° 120° θ 360° RESISTIVE, INDUCTIVE LOAD RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) (PER SINGLE MODULE) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE