TM200DZ-M MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers TM200DZ/CZ/PZ-M,-H,-24,-2H

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • DOUBLE ARMS
  • Insulated Type
  • UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) (DZ Type) (Bold line is connective bar.) 3–φ6.5 4–M8 A1 K1 A2K2 18 16 18 16 32 30 68.5 68.5 150 Tab#110, t=0.5 CR1 K1 CR2 (DZ) (CZ) (PZ) CR1 K1 K2 CR2 CR1 K1 K2 CR2 206 LABEL

Feb.1999 1200 1350 960 1200 1350 960 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE M 400 480 320 400 480 320 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A V N·m kg·cm N·m kg·cm g Conditions Single-phase, half-wave 180° conduction, T C=64°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=125°C Charged part to case Main terminal screw M8 Mounting screw M6 Typical value Ratings 310 200 4000 6.7 × 10 100 3.0 5.0 4.0 –40~+125 –40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W MΩ Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Min. 500 0.25 Typ. Max. 1.35 3.0 100 0.2 0.1 H 800 960 640 800 960 640 1600 1700 1280 1600 1700 1280 Test conditions T j=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=600A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case

Feb.1999 –110 –210 –310 010 010 110 410 310 210 110 –110 010 110 –110 210 110 010 7050302075320 500 4000 101 100 1000 1500 2000 2500 3000 3500 753275327532 VGT=3.0V IGT= 100mA IFGM=4.0A PGM=10WVFGM=10V VGD=0.25V PG(AV)= 3.0WTj=25°C 0.5 1.0 2.0 2.51.5 Tj=125°C 753275327532 0.25 7532 0.05 0.10 0.15 0.20 0 0 200 320 120 160 200 240 280 40 80 120 160 θ=30° 120° 90° 180°θ 360° 60° 130 50 0 120 20040 100 110 120 80 160 θ=30° 60° 90° θ 360° 180°120° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT ON-STATE CURRENT (A) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) GATE VOLTAGE (V)AVERAGE ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) CASE TEMPERATURE (°C) TIME (s)GATE CURRENT (mA) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE

Feb.1999 0 0 32040 400 16080 120 100 150 200 250 300 350 200 240 280 θ=30° 60° 90° θ 360° 270° DC 120° 180° 30 0 32040 130 280120 20080 160 240 100 110 120 180° DCθ=30° θ 360° 60° 90° 120° 270° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE (°C) MITSUBISHI THYRISTOR MODULES TM200DZ/CZ/PZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE