TM150SA-6 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Welders TM150SA-6

  • VRRM Repetitive peak reverse voltage
  • VDRM Repetitive peak off-state voltage
  • TRIPLE ARMS
  • Non-Insulated Type 3–φ9.0 Tab#110, t=0.5 (20.5) (26) (26) K2 G2 K1 G1 G3 K3 2.5 493 108 2.5 2–φ6.5 2–φ1.0 12218A A CR3 CR2 CR1 LABEL K3 K2 K1

Feb.1999 ABSOLUTE MAXIMUM RATINGS Unit V V V V V V MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE 300 360 240 300 360 240 Symbol V RRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Unit A A A A A/µs W W V V A N·m kg·cm N·m kg·cm g Conditions Three-phase, half-wave, T C=119°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D=1/2VDRM, IG=1.0A, Tj=150°C Main terminal screw M8 Mounting screw M6 Typical value Ratings 230 150 3000 3.8 × 10 100 5.0 0.5 5.0 2.0 –40~+150 –40~+125 8.83~10..8 90~110 1.96~2.94 20~30 250 Symbol I T (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Voltage class

ELECTRICAL CHARACTERISTICS

V V/µs V V mA °C/W °C/W Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Test conditions T j=150°C, VRRM applied Tj=150°C, VDRM applied Tj=150°C, ITM=450A, instantaneous meas. Tj=150°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=150°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/3 module) Case to fin, conductive grease applied (per 1/3 module) Min. 200 0.25 Typ. Max. 1.2 3.0 100 0.15 0.15

Feb.1999 –110 –210 –310 010 010 110 110 010 –110 410 310 210 110 410 310 210 110 753275327532 VGT=3.0V IGT= 100mA IFGM=2.0A PGM=5W VFGM=10V VGD=0.25V PFG(AV)= 0.50W Tj=25°C 7050302075320 800 4000 1600 2400 3200 101 100 753275327532 0.200 7532 0.025 0.050 0.075 0.100 0.125 0.150 0.175 0.6 Tj=150°C 0 0 200 200 40 80 120 120 160 160 180 100 140 θ=30° 120° 90° 180° 60° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 0 200 150 110 40 80 120 120 130 140 160 θ 360° PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) ON-STATE CURRENT (A)GATE VOLTAGE (V) SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLE AT 60Hz) ON-STATE VOLTAGE (V) GATE CURRENT (mA) TIME (s) MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE ( °C)

Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE ( °C) AVERAGE ON-STATE POWER DISSIPATION (W) 100 0 250 50 150 200 110 100 150 120 130 140 120°60° 90° θ 360° θ=30° 180° DC 270° PER SINGLE ELEMENT 0 0 250 50 250 200 100 150 100 150 200 DC θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT θ=30° 60° 90° 120° 180° 270° RESISTIVE, INDUCTIVE LOAD